An electronic package including a middle patterned conductive layer, a first redistribution circuitry disposed on a first surface of the middle patterned conductive layer and a second redistribution circuitry disposed on a second surface of the middle patterned conductive layer is provided. The middle patterned conductive layer has a plurality of middle conductive pads. The first redistribution circuitry includes a first patterned conductive layer having a plurality of first conductive elements. Each of the first conductive elements has a first conductive pad and a first conductive via that form a T-shaped section. The second redistribution circuitry includes a second patterned conductive layer having a plurality of second conductive elements. Each of the second conductive elements has a second conductive pad and a second conductive via that form an inversed T-shaped section.

The present disclosure relates to a radio frequency device that includes a transfer device die and a multilayer redistribution structure underneath the transfer device die. The transfer device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion and a transfer substrate. The FEOL portion includes isolation sections and an active layer surrounded by the isolation sections. A top surface of the device region is planarized. The transfer substrate resides over the top surface of the device region. Herein, silicon crystal does not exist within the transfer substrate or between the transfer substrate and the active layer. The multilayer redistribution structure includes a number of bump structures, which are at a bottom of the multilayer redistribution structure and electrically coupled to the FEOL portion of the transfer device die.

Methods of forming semiconductor packages include providing a lead frame having leads and no tie-bars. Tape is attached to the lead frame and one or more semiconductor die are coupled therewith. Electrical contacts of the die are interconnected with the leads using electrical connectors. An encapsulated assembly is formed by at least partially encapsulating the die and electrical connectors. The assembly is singulated to form a semiconductor package. The tape is detached from the package or encapsulated assembly. One or more die attach flags may be attached to the tape and the die may be attached thereto. Semiconductor packages formed using the methods include one or more semiconductor die at least partially encapsulated, pins exposed through the encapsulant, electrical connectors within the encapsulant and electrically interconnecting the pins with electrical contacts of the die, and no tie-bars coupling the die with the pins. Packages may also include die attach flags.

In accordance with disclosed embodiments, there is a method of integrating and accessing passive components in three-dimensional fan-out wafer-level packages. One example is a microelectronic die package that includes a die, a package substrate attached to the die on one side of the die and configured to be connected to a system board, a plurality of passive devices over a second side of the die, and a plurality of passive device contacts over a respective passive die, the contacts being configured to be coupled to a second die mounted over the passive devices and over the second side of the die.

Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a die having a first surface and an opposing second surface; a capacitor having a surface, wherein the surface of the capacitor is coupled to the first surface of the die; and a conductive pillar coupled to the first surface of the die. In some embodiments, a microelectronic assembly may include a capacitor in a first dielectric layer; a conductive pillar in the first dielectric layer; a first die having a surface in the first dielectric layer; and a second die having a surface in a second dielectric layer, wherein the second dielectric layer is on the first dielectric layer, and wherein the surface of the second die is coupled to the capacitor, to the surface of the first die, and to the conductive pillar.

A device is disclosed which includes, in one illustrative example, an integrated circuit die having an active surface and a molded body extending around a perimeter of the die, the molded body having lips that are positioned above a portion of the active surface of the die. Another illustrative example includes an integrated circuit die having an active surface, a molded body extending around a perimeter of the die and a CTE buffer material formed around at least a portion of the perimeter of the die adjacent the active surface of the die, wherein the CTE buffer material is positioned between a portion of the die and a portion of the molded body and wherein the CTE buffer material has a coefficient of thermal expansion that is intermediate a coefficient of thermal expansion for the die and a coefficient of thermal expansion for the molded body.

A microelectronic assembly having a first side and a second side opposite therefrom is disclosed. The microelectronic assembly may include a microelectronic element having a first face, a second face opposite the first face, a plurality of sidewalls each extending between the first and second faces, and a plurality of element contacts. The microelectronic assembly may also include an encapsulation adjacent the sidewalls of the microelectronic element. The microelectronic assembly may include electrically conductive connector elements each having a first end, a second end remote from the first end, and an edge surface extending between the first and second ends, wherein one of the first end or the second end of each connector element is adjacent the first side of the package. The microelectronic assembly may include a redistribution structure having terminals, the redistribution structure adjacent the second side of the package, the terminals being electrically coupled with the connector elements.

An electronic device and a method of manufacturing an electronic device. As non-limiting examples, various aspects of this disclosure provide various methods of manufacturing electronic devices, and electronic devices manufactured thereby, that comprise utilizing metal studs to further set a semiconductor die into the encapsulant.

Photonic devices and methods of manufacture are provided. In embodiments a fill material and/or a secondary waveguide are utilized in order to protect other internal structures such as grating couplers from the rigors of subsequent processing steps. Through the use of these structures at the appropriate times during the manufacturing process, damage and debris that would otherwise interfere with the manufacturing process of the device or operation of the device can be avoided.

A semiconductor device may include an embedded device comprising through silicon vias (TSVs) extending from a first surface to a second surface opposite the first surface, wherein the embedded device comprises an active device, a semiconductor die comprising an active surface formed at the first surface, an integrated passive device (IPD), or a passive device. Encapsulant may be disposed over at least five sides of the embedded device. A first electrical interconnect structure may be coupled to a first end of the TSV at the first surface of the embedded device, and a second electrical interconnect structure may be coupled to a second end of the TSV at the second surface of the embedded device. A semiconductor die (e.g. a system on chip (SoC), memory device, microprocessor, graphics processor, or analog device), may be mounted over the first electrical interconnect of the TSV.