BUILD-UP PACKAGE FOR INTEGRATED CIRCUIT DEVICES, AND METHODS OF MAKING SAME

Abstract

A device is disclosed which includes, in one illustrative example, an integrated circuit die having an active surface and a molded body extending around a perimeter of the die, the molded body having lips that are positioned above a portion of the active surface of the die. Another illustrative example includes an integrated circuit die having an active surface, a molded body extending around a perimeter of the die and a CTE buffer material formed around at least a portion of the perimeter of the die adjacent the active surface of the die, wherein the CTE buffer material is positioned between a portion of the die and a portion of the molded body and wherein the CTE buffer material has a coefficient of thermal expansion that is intermediate a coefficient of thermal expansion for the die and a coefficient of thermal expansion for the molded body.

Claims

1-13. (canceled)

14. A semiconductor device, comprising: a die having an active surface; a bond pad at the active surface; a first layer of insulating material carried by the active surface, the first layer of insulating material including a first opening vertically aligned with the bond pad; a molded body surrounding a lateral perimeter of the die, wherein the molded body includes an extension portion over a portion of the active surface of the die and in contact with a sidewall of the first layer of insulating material; a second layer of insulating material carried by the first layer of insulating material and the molded body, the second layer of insulating material including a second opening vertically aligned with the first opening; and a conductive layer carried by the second layer of insulation material, the conductive layer electrically coupled to the bond pad through the first and second openings.

15. The semiconductor device of claim 14 wherein the bond pad has an upper surface, and wherein the first layer of insulating material at least partially covers the upper surface of the bond pad.

16. The semiconductor device of claim 14 wherein the bond pad has an upper surface, and wherein the upper surface is coplanar with the active surface of the die.

17. The semiconductor device of claim 14 wherein the lateral perimeter of the die is laterally offset from the sidewall of the first layer of insulating material.

18. The semiconductor device of claim 14 wherein the first layer of insulating material has a first upper surface, wherein the molded body has a second upper surface, and wherein the first upper surface is coplanar with the second upper surface.

19. The semiconductor device of claim 14, further comprising a third layer of insulating material deposited over the conductive layer, the third layer of insulating material having a third opening exposing a portion of the conductive layer.

20. The semiconductor device of claim 19, further comprising: a second bond pad coupled to the conductive layer in the third opening; and a conductive structure coupled to the second bond pad and extending at least partially out of the third opening.

21. The semiconductor device of claim 14 wherein the sidewall of the first layer of insulating material is offset from the lateral perimeter of the die between 100 micrometers (m) to 500 μm.

22. The semiconductor device of claim 14 wherein the molded body has a first thickness, and wherein a combination of the die and the first layer of insulating material have a second thickness equal to the first thickness.

23. The semiconductor device of claim 14 wherein the extension portion of the molded body defines a window that has a first footprint, and wherein the die has a second footprint that is greater than the first footprint.

24. A semiconductor device, comprising: a die having an active surface; a bond pad at the active surface and having an upper surface; an insulating layer deposited on the active surface, wherein the insulating layer at least partially covers the upper surface of the bond pad, and wherein the insulating layer includes an opening vertically aligned with the bond pad; and a molded body having a primary vertical interface with a lateral portion of the die, wherein the molded body includes an extension portion extending inward beyond the primary vertical interface and contacting a sidewall of the insulating layer.

25. The semiconductor device of claim 24, further comprising a conductive layer coupled to the bond pad through the opening in the insulating layer and extending longitudinally away from the opening.

26. The semiconductor device of claim 25, further comprising a second insulating layer deposited over the conductive layer, wherein the second insulating layer includes a second opening exposing at least a portion of the conductive layer.

27. The semiconductor device of claim 26 wherein the second opening is spaced laterally outward from the primary vertical interface between the molded body and the die.

28. The semiconductor device of claim 24 wherein the insulating layer has an upper surface, and wherein the molded body has an upper surface that is coplanar with the upper surface of the insulating layer.

29. The semiconductor device of claim 24 wherein the insulating layer is a first insulating layer and the opening is a first opening, wherein the semiconductor device further comprises a second insulating layer deposited over the first insulating layer and the molded body, and wherein the second insulating layer includes a second opening vertically aligned with the first opening.

30. A semiconductor device, comprising: a die having an active surface, wherein the active surface includes a bond pad formed thereon; an insulating material deposited over a portion of the active surface, wherein the insulating material at least partially covers an upper surface of the bond pad, and wherein the insulating material includes an opening exposing a portion of the bond pad; a molded material deposited around a lateral portion of the die, wherein the molded material includes a vertical interface with the lateral portion and an extension portion extending inward beyond the vertical interface to a sidewall of the insulating material; and a conductive layer deposited over the insulating material and the molded material, wherein the conductive layer is electrically coupled to the bond pad through the opening in the insulating material.

31. The semiconductor device of claim 30 wherein: the opening is a first opening; the semiconductor device further comprises a second insulating material deposited over the insulating material and the molded material and beneath the conductive layer; the second insulating material includes a second opening vertically aligned with the first opening; and the conductive layer is electrically coupled to the bond pad through the first and second openings.

32. The semiconductor device of claim 30 wherein the conductive layer extends over the extension portion of the molded material to a position laterally exterior to the vertical interface.

33. The semiconductor device of claim 30, further comprising a second insulating material deposited over the conductive layer, the second insulating material including a second opening exposing at least a portion of the conductive layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The present subject matter may be understood by reference to the following description taken in conjunction with the accompanying drawings, in which like reference numerals identify like elements, and in which:

[0009] FIGS. 1A-1B schematically depict an illustrative integrated circuit device packaged using a build-up technique;

[0010] FIGS. 2A-2F schematically depict an illustrative process flow for making a novel packaged integrated circuit device, as disclosed herein; and

[0011] FIGS. 3A-3I schematically depict another illustrative process flow for making a novel packaged integrated circuit device, as disclosed herein.

[0012] While the subject matter disclosed herein is susceptible to various modifications and alternative forms, specific embodiments thereof have been shown by way of example in the drawings and are herein described in detail. It should be understood, however, that the description herein of specific embodiments is not intended to limit the invention to the particular forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.

DETAILED DESCRIPTION OF THE INVENTION

[0013] Illustrative embodiments of the present subject matter are described below. In the interest of clarity, not all features of an actual implementation are described in this specification. Although various regions and structures shown in the drawings are depicted as having very precise, sharp configurations and profiles, those skilled in the art recognize that, in reality, these regions and structures are not as precise as indicated in the drawings. Additionally, the relative sizes of the various features and doped regions depicted in the drawings may be exaggerated or reduced as compared to the size of those features or regions on fabricated devices. Nevertheless, the attached drawings are included to describe and explain illustrative examples of the subject matter disclosed herein.

[0014] FIGS. 2A-2F schematically depict one illustrative process flow for manufacturing the novel packaged integrated circuit devices disclosed herein. As shown in FIG. 2A, a layer of material 42 is formed above an active face 41 of an integrated circuit die 40. The die 40 has a plurality of bond pads 43, only one of which is depicted in FIG. 2A. The die 40 may be of any shape or thickness and it may be any type of integrated circuit device, e.g., a memory device, a logic device, an application specific integrated circuit device, etc. Thus, the present disclosure should not be considered as limited to any particular type of integrated circuit device. The bond pad 43 is schematic in nature as it is intended to represent any arrangement or configuration of bond pads that may be formed on the active surface 43 of the die 40. Similarly, the layer 42 may be comprised of a variety of materials and it may be formed using a variety of techniques. In one illustrative embodiment, the layer of material 42 is a layer of insulating material, e.g., polyimide, having a thickness of approximately 5-30 μm. The layer 42 may be formed by performing a variety of known techniques, e.g., spin-coating followed by curing, deposition, etc. Thus, the present subject matter should not be considered as limited to any particular material or method of manufacture for the layer 42.

[0015] Next, as shown in FIG. 2B, a masking layer 46 is formed above the layer 42 and an etching process, as indicated by the arrows 48, is performed to remove the portions of the layer 42 that are not covered by the masking layer 46. However, the width 50 need not be uniform around the entire perimeter of the die 40 in all applications. In one illustrative example, the width 50 of the removed portion may be approximately 100-500 μm. The masking layer 46 may be comprised of any material that is capable of performing the masking function, e.g., photoresist. The etching process 48 may be performed using traditional equipment and recipes to remove the exposed portions of the layer 42. After the etching process 48 is completed, the masking layer 46 may be removed.

[0016] Next, as shown in FIG. 2C, the structure is placed face down on a section of tape 51 and a molded body 44 is formed around the die 40 using traditional compression molding techniques. The tape 51 is removed in FIG. 2D. Although only a single die 40 is depicted in FIG. 2C, those skilled in the art will understand that, typically, the molded body 44 may be formed around a plurality of individual die 40 that are coupled to the tape 51. The molded body 44 may have an overall circular configuration, much like a semiconductor wafer, with a plurality of die 40 embedded therein. The molded body 44 may be made using a variety of known compression molding techniques, materials and equipment. In one illustrative embodiment, the molded body 44 is comprised of mold compound or encapsulant material that is commonly employed in encapsulating integrated circuit die. Note that the molded body 44 has a thickness that approximately corresponds to the combined thickness of the die 40 and the layer 42. As shown in FIGS. 2C and 2D, a portion or lip 53 of the molded body 44 extends above the corner 52 of the integrated circuit die 40. Stated another way, the portion 53 of the molded body 44 is positioned above the portions of the active face 41 of the die 40 that is not covered by the etched layer 42. The portions or extensions 53 of the molded body 44 extend inward beyond the primary vertical interface 61 between the die 40 and the molded body 44. In general, the compound molding process is continued until such time as the lips 53 of the molded body 44 engage or abut the reduced width layer 42 at the interface 55.

[0017] Thereafter, traditional processing techniques and structures may be employed to further complete the packaged integrated circuit device, as reflected in FIG. 2E. More specifically, such processing may involve formation of first and second insulating layers 58 and 60, and the formation of the conductive layer 18 using techniques known to those skilled in the art. Additionally, a ball pad 62 and ball 64 may be formed and conductively coupled to the conductive layer 18 using known techniques and materials. The conductive components may be made of a variety of materials, e.g., copper, aluminum, gold, etc.

[0018] FIG. 2F is a schematically depicted plan view of the resulting packaged die (without the insulating layers above the layer 42 depicted). As shown therein, the extensions 53 of the molded body 44 extend inwardly above the active face 41 of the die 40 beyond the primary vertical interface 61 between the die 40 and the molded body 44. Stated another way, the extensions 53 define a window 65 that has a footprint or size that is less than the footprint or size of the active face 41 of the underlying die 40. Accordingly, the conductive traces tend to experience less stress in the region indicated by the dashed-line circle 59 as compared to prior art BUP packaged devices, like the illustrative package depicted in FIGS. 1A-1B.

[0019] FIGS. 3A-3I depict another illustrative embodiment of a novel packaged integrated circuit device disclosed herein. In FIG. 3A, a plurality of singulated die 40 are attached to a section of tape 70. The active face 43 of the die 40 engages the tape 70.

[0020] Next, as shown in FIG. 3B, a CTE (coefficient of thermal expansion) buffer material 72 is formed around at least a portion of the perimeter of each of the die 40. In the illustrative example depicted in FIG. 3B, the CTE buffer material 72 is positioned around the entire perimeter of the die 40, although that is not required in all configurations. In general, the CTE buffer material 72 may have a coefficient of thermal expansion that is intermediate the coefficient of thermal expansion for the die 40 and the coefficient of thermal expansion for the molded body 44 that is to be formed adjacent the die 40. The CTE buffer material 72 may be comprised of a variety of different materials and it may be formed using a variety of techniques. In one illustrative example, the CTE buffer material 72 is a material that may be dispensed as a liquid or liquid-like material and thereafter cured. The size of the CTE buffer material 72 may also vary depending upon the particular application. In some cases, the CTE buffer material 72 may have an approximately triangular shaped cross-sectional configuration (as shown in FIG. 3B), with a leg length equal to approximately one-half the thickness of the die 40. In the illustrative example where the die 40 has a thickness of approximately 300-500 μm, the leg length of the CTE buffer material 72 may be approximately 150-250 μm. In one particularly illustrative embodiment, the CTE buffer material 72 may be comprised of traditional underfill material, or other liquid encapsulant material, having a coefficient of thermal expansion of approximately 4.14 ppm/° C. As an example, the die 40 may have a coefficient of thermal expansion of approximately 2.69 ppm/° C. while the molded body 44 may have a coefficient of thermal expansion of approximately 8.28 ppm/° C.

[0021] Next, as shown in FIG. 3C, the molded body 44 is formed around the plurality of singulated die 40 using known compressed molded techniques. Thereafter, the tape 70 is removed, as shown in FIG. 3D. Then, as shown in FIG. 3E, if desired, a grinding process may be performed to remove excess amounts of the molded body 44 from above the back surface 45 of the die 40. Of course, this grinding process need not be performed in all applications. After the grinding process is completed, another portion of tape 74 is attached to the back of the die 40/molded body 44. Next, as shown in FIG. 3G, traditional fabrication techniques are employed to form the necessary insulation layers, conductive layers and conductive balls 64, as described previously. Thereafter, as shown in FIG. 3H, the packaged die are singulated using traditional techniques.

[0022] FIG. 3I is a plan view depicting the packaged die (without the insulating materials present). As shown in this particular example, the CTE buffer material 72 essentially rings the perimeter of the die 40. Stated another way, in one illustrative embodiment, the CTE buffer material 72 is positioned between the die 40 and the molded body 44, at least at the substantially coplanar upper surfaces of the die 40, CTE buffer material 72 and molded body 44. In some cases, the CTE buffer material 72 may only be positioned along the side surfaces of the die 40 where the conductive traces will cross. The presence of the CTE buffer material 72, with its intermediate coefficient of thermal expansion, tends to reduce the localized stresses seen by the conductive traces in at least the region indicated by dashed lines 75.