A substrate liquid processing apparatus includes a liquid processing unit configured to store a processing liquid and a substrate and process the substrate using the processing liquid, the processing liquid including a phosphoric acid aqueous solution; a phosphoric acid aqueous solution supply unit configured to supply the phosphoric acid aqueous solution to the liquid processing unit; a discharge line connected to the liquid processing unit, and configured to discharge the processing liquid; a return line switchably connected to the discharge line, and configured to return the processing liquid to the liquid processing unit; a recycling line switchably connected to the discharge line, and including a recycling unit configured to recycle the processing liquid; and a waste line switchably connected to the discharge line, and configured to discard the processing liquid to the outside.

A semiconductor wafer processing system for processing a set of semiconductor wafers includes a controller, a transfer robot controlled by the controller, a wet bath for containing a cleaning solution, and a cassette positioned in the wet bath for holding the set of wafers. The transfer robot transfers the wafer from a transfer location to the cassette and the controller controls the transfer robot during the transfer.

A substrate liquid processing apparatus includes: at least one liquid pipe through which a processing liquid flows; a discharge nozzle configured to discharge the processing liquid supplied via the at least one liquid pipe; a valve mechanism configured to regulate a flow of the processing liquid in the at least one liquid pipe; and a liquid detection sensor configured to detect presence or absence of the processing liquid in the at least one liquid pipe, wherein in a state in which the valve mechanism is operating so that the processing liquid in the at least one liquid pipe is located at an upstream of a first pipe measurement site of the at least one liquid pipe, the liquid detection sensor detects the presence or absence of the processing liquid at the first pipe measurement site located at a first measurement point.

A substrate processing system capable of setting a stable reference ground level for electrical components while handling electrostatic discharge (ESD) is provided. The substrate processing system includes a first ground bar connected to a building ground; and a second ground bar connected to the building ground and physically separated from the first ground bar, wherein the first ground bar is connected to a first electrical component to set a ground level of the first electrical component, wherein the second ground bar is dedicated to a charged component, and the second ground bar is connected to the first charged component to set a path of the electrostatic discharge current generated by the first charged component.

An apparatus for treating a substrate is provided. The apparatus for treating the substrate includes a first process chamber to perform a liquid treatment process with respect to the substrate, a second process chamber to perform a drying treatment process with respect to the substrate which is liquid treated in the first process chamber, a first hand to introduce the substrate to the first process chamber, before the liquid treatment process is performed, a second hand to withdraw the substrate from the first process chamber after the liquid treatment process is performed and to introduce the substrate into the second process chamber, and a third hand to withdraw the substrate from the second process chamber after the drying treatment process is performed.

A method includes moving a drum containing a chemical liquid into a chamber of a chemical liquid supplying system. The drum is connected with a testing pipe. The chemical liquid is pumped from the drum to the testing pipe. A condition of the chemical liquid flowing through the testing pipe is monitored. Whether the chemical liquid is supplied to a processing tool is determined based on the condition of the chemical liquid.

According to one embodiment, a substrate treatment device includes a placement stand configured to rotate a substrate, a cooling part configured to supply a cooling gas into a space between the placement stand and the substrate, a liquid supplier configured to supply a liquid on a surface of the substrate opposite to the placement stand, and a controller controlling a rotation speed of the substrate, a flow rate of the cooling gas, or a supply amount of the liquid. The controller sets the liquid on the surface of the substrate to be in a supercooled state, forms a frozen film by freezing the liquid in the super cooled state, and causes crack to generate in the frozen film by decreasing a temperature of the frozen film.

A semiconductor device inspection method including: depositing a dielectric material over a substrate to form an interconnect-level dielectric (ILD) layer; patterning the ILD layer to form via structures in the ILD layer; depositing an electrically conductive material to form an inspection layer on the ILD layer and in the via structures; imaging the inspection layer to generate image data; and detecting any defects in the via structures by analyzing the image data.

Described herein is a technique capable of optimizing a timing of a maintenance process. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) transferring a substrate to a process chamber, and performing a substrate processing; (b) receiving maintenance reservation information of the process chamber wherein a maintenance timing at which the process chamber enters into a maintenance enable state is determined by the maintenance reservation information; and (c) continuously performing the substrate processing after the maintenance reservation information is received in (b) until the substrate processing in the process chamber related to the maintenance reservation information is completed, stopping one or more substrates including the substrate from being transferred into the process chamber, and thereafter setting the process chamber to the maintenance enable state.

There is provided a substrate processing apparatus which includes: an exhaust pipe configured to selectively discharge an exhaust gas generated by a substrate process to a first pipe or a second pipe; a liquid supply part configured to supply a cleaning liquid to the exhaust pipe; a discharge destination setting part configured to set a discharge destination of the exhaust gas to the first pipe or the second pipe by rotating the exhaust pipe; and a controller configured to control the discharge destination setting part to rotate the exhaust pipe. The controller is further configured to control the liquid supply part to supply the cleaning liquid to the rotating exhaust pipe.