A liquid processing apparatus includes: a tank configured to store a processing liquid supplied from a processing liquid supply source; a circulation passage connected to the tank; a pump installed at the circulation passage; a plurality of liquid processors configured to perform liquid processing on a substrate; and a plurality of supply passages configured to supply the processing liquid to the plurality of liquid processors respectively, wherein the circulation passage includes a main passage portion provided with the pump, and a first branch passage portion and a second branch passage portion branching from the main passage portion, and the processing liquid flowing out from the tank passes through the main passage portion, then flows into the first branch passage portion and the second branch passage portion, and then returns to the tank through the first branch passage portion and the second branch passage portion.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a space for treating a substrate therein; a support unit for supporting the substrate within the chamber; and an insulation member having a space of a predetermined volume therein.

A chemical mechanical planarization system includes a chemical mechanical planarization pad that rotates during a chemical mechanical planarization process. A chemical mechanical planarization head places a semiconductor wafer in contact with the chemical mechanical planarization pad during the process. A slurry supply system supplies a slurry onto the pad during the process. A pad conditioner conditions the pad during the process. An impurity removal system removes debris and impurities from the slurry.

A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.

A gas heating apparatus includes a heating element having a flat plate shape, a heat-resistant enclosure in which a space having a flat plate shape is provided, the heating element being disposed in the space with a gap provided between the heating element and the heat-resistant enclosure, a gas inlet joint connected to the heat-resistant enclosure to allow gas to flow into the space, a gas outlet joint connected to the heat-resistant enclosure to allow the gas that has passed through the space to flow out, and an induction coil disposed in parallel with the heating element on a lower surface of the heat-resistant enclosure, the induction coil inductively heating the heating element on the basis of electric power supplied.

A control device includes a calculation unit generating control information for an epitaxial growth apparatus; and a storage unit storing measurement values for an epitaxial film formed by the epitaxial growth apparatus and measurement values for epitaxial films formed by a plurality of other epitaxial growth apparatuses that are provided in the same production line as the epitaxial growth apparatus that needs new control. The calculation unit generates and outputs information for controlling at least one of the supply time of a source gas and the flow rate of a dopant gas in the epitaxial growth apparatus based on the measurement values for the epitaxial film formed by the epitaxial growth apparatus that needs new control and the measurement values of the epitaxial films formed by the other epitaxial growth apparatuses in the same production line that are in operation concurrently with the epitaxial growth apparatus.

A fluid supply apparatus includes a container supply holder configured to supply a container to a cap separator using a loading box, the container including a detachable nozzle cap, and configured to store a process fluid, a cap separator configured to receive the container from the loading box and separate the nozzle cap from a container body of the container using a cap clamper and a rotation actuator, the cap clamper configured to clamp and hold the nozzle cap, and the rotation actuator configured to rotate the container body, a fluid supplier configured to supply the process fluid contained in the container body through a fluid supply line, and a controller configured to control the container supply holder, the cap separator, and the fluid supplier.

A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a surface of a substrate, a processing film forming step of solidifying or curing the processing liquid supplied to the surface of the substrate to form, on the surface of the substrate, a processing film that holds a removal object present on the surface of the substrate, a peeling step of supplying a peeling liquid forming liquid to the surface of the substrate to put the peeling liquid forming liquid in contact with the processing film and form a peeling liquid, and peeling the processing film, in the state of holding the removal object, from the surface of the substrate by the peeling liquid, and a removing step of continuing the supply of the peeling liquid forming liquid, after the peeling of the processing film, to wash away and remove the processing film from the surface of the substrate in the state where the removal object is held by the processing film.

A processing liquid supply system includes: a processing liquid supply apparatus including a first carrier accommodation section that accommodates a carrier, a first bottle accommodation section that accommodates a processing liquid bottle taken out from the carrier, a liquid feeding section that feeds a processing liquid to a substrate processing apparatus from the processing liquid bottle, and a first transfer arm; and a control device configured to control the first transfer arm to take a processing liquid bottle out from the carrier and transfer the processing liquid bottle to the first bottle accommodation section, to transfer the processing liquid bottle from the first bottle accommodation section to the liquid feeding section, and to transfer the consumed processing liquid bottle from the liquid feeding arm and accommodate the consumed processing liquid bottle in the carrier.

A sub-fab area installation apparatus includes: a vacuum pump configured to evacuate a processing gas from a processing chamber of the semiconductor manufacturing equipment; a cooling unit configured to cool a first circulation liquid used in the processing chamber; a heating unit configured to heat a second circulation liquid used in the processing chamber; and a cooling-liquid line configured to pass a cooling liquid therethrough. The cooling liquid is supplied from a cooling source. The cooling-liquid line includes: a distribution line configured to supply the cooling liquid to the vacuum pump and the cooling unit; and a merging return line configured to merge the cooling liquid that has passed through the vacuum pump and the cooling unit and return the cooling liquid to the cooling source.