An apparatus capable of heating a liquid may provide a valve assembly configured to receive an incoming liquid from a bulk source. The valve assembly may control the flow of the liquid to a source vessel via a pipe system. The pipe system includes a first pipe directly connected to the valve assembly and a second pipe downstream from the first pipe and connected between the first pipe and the source valve. The second pipe is heated with a heating system that surrounds the second pipe, and the second pipe has a larger diameter than that of the first pipe.

A substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a treating unit and a controller. The treating unit includes a substrate holder, a rotation driving unit, a treatment liquid supplying unit, a liquid collecting unit, and a guard driving unit. The substrate holder holds a substrate in a horizontal posture. The rotation driving unit rotates the substrate holder. The liquid collecting unit includes a first guard, a second guard, and a liquid inlet. The first guard and the second guard are arranged so as to surround the substrate holder laterally. The liquid inlet is defined by the guards. The liquid inlet is open toward the substrate held by the substrate holder. The guard driving unit moves the second guard in a vertical direction. The controller controls the guard driving unit in accordance with the shape of the substrate held by the substrate holder, thereby changing a height position of an upper end of the liquid inlet.

In one embodiment, a semiconductor manufacturing apparatus includes a container configured to contain a substrate, and a pipe configured to supply the container with liquid to treat the substrate. The apparatus further includes an ejector including a first passage where the liquid introduced from the pipe and the liquid introduced from the container are joined and pass through, and a first opening configured to eject the liquid that has passed through the first passage. Furthermore, the first passage has an area where a sectional area of the first passage becomes large as advancing downstream in the liquid.

The disclosed techniques include a space filling device to be used with a wet bench in chemical replacement procedures. The space filling device has an overall density that is higher than the chemicals used to purge the wet bench. As such, when embedded into the wet bench, or more specifically, the chemical tank of the wet bench, the space filling device will occupy a portion of the interior volume space. As a result, less purging chemicals are used to fill and bath the wet bench.

The present invention relates to a substrate treatment apparatus including: a substrate support assembly having a spin head adapted to seat a substrate thereonto; fluid supply unit for supplying fluid to the substrate; a bowl assembly having a plurality of bowls overlaid another outwardly in a radial direction thereof and surrounding the substrate support assembly; an ascending and descending unit for moving up and down the bowl assembly; and a chamber for accommodating the substrate support assembly, the fluid supply unit, the bowl assembly, and the ascending and descending unit, wherein the chamber is configured to have a plurality of process exhaust parts for performing exhaust from the inside of the bowl assembly and an environment exhaust part for performing exhaust from the outside of the bowl assembly.

A substrate processing apparatus includes: a holder that holds a substrate; a liquid supply that sequentially supplies a first processing liquid and a second processing liquid to a main surface of the substrate held by the holder; a friction body that comes into contact with and rub the main surface of the substrate during the supply of the first processing liquid and the second processing liquid; a mover that moves a contact position of the friction body in a first axial direction and a second axial direction; and a controller that controls the liquid supply and the mover to move the contact position of the friction body in one-side direction of the first axial direction during the supply of the first processing liquid, and move the contact position of the friction body in the other-side direction of the first axial direction during the supply of the second processing liquid.

A substrate processing apparatus according to the invention executes a substrate processing using a supercritical processing fluid. In a processing container, a first introduction port is formed in such a manner as to face space over a substrate in the processing space and a second introduction port is formed in such a manner as to face space under a support tray in the processing space. A first discharge port is formed in such a manner as to face space over the support tray and a second discharge port is formed in such a manner as to face the space under the support tray. The supercritical processing fluid having a higher temperature is supplied into the processing space through the first introduction port, and the supercritical processing fluid having a lower temperature is supplied into the processing space through the second introduction port.

Provided is a substrate treating method. The substrate treating method includes: a first supercritical processing operation of loading a first substrate into a supercritical chamber and supercritically processing the first substrate in the supercritical chamber; a resting operation of maintaining the supercritical chamber in an empty state for a first time until a temperature in the supercritical chamber becomes a preset temperature by opening the supercritical chamber after the first substrate is unloaded from the supercritical chamber; and a second supercritical processing operation of loading a second substrate into the supercritical chamber and supercritically processing the second substrate in the supercritical chamber.

Provided is a heating unit including: a heating plate for heating a substrate; a heater installed in the heating plate; and a control unit for controlling the heater, in which wherein the heater includes: a first heater; and a second heater installed at a position different from a position of the first heater, and the control unit includes: a power source for transferring power to at least one of the first heater and the second heater; and a switching module for connecting the first heater and the second heater in series or connecting the first heater and the second heater in parallel.

Provided is an apparatus for treating a substrate, the apparatus including: a liquid treating chamber for liquid-treating a substrate by supplying a treatment liquid to the substrate; and a liquid supply unit for supplying the treatment liquid to the liquid treating chamber, in which the liquid supply unit includes: a cabinet configured to be mounted with a bottle containing the treatment liquid; and a rotation generating part configured to rotate the bottle so that a direction in which an inlet of the bottle mounted on the cabinet faces is changed.