A substrate processing apparatus includes a rotation driving device configured to rotate a rotary table holding a substrate; an electric heater provided at the rotary table and configured to heat the substrate; a power receiving electrode provided at the rotary table and electrically connected to the electric heater; a power feeding electrode configured to be contacted with the power receiving electrode to supply a power to the electric heater via the power receiving electrode; an electrode moving device configured to connect and disconnect the power feeding electrode and the power receiving electrode relatively; a power feeder configured to supply the power to the power feeding electrode; a processing cup disposed to surround the rotary table; at least one processing liquid nozzle configured to supply a processing liquid onto the substrate; a processing liquid supply device configured to supply the processing liquid to the processing liquid nozzle; and a controller.

A processing apparatus includes a chuck configured to hold a substrate; a moving unit to which a processing tool configured to process the substrate is mounted; a sprinkler configured to spray a cleaning liquid configured to clean the moving unit from an outside of the moving unit; and a housing accommodating the chuck, the processing tool, and the sprinkler therein. The sprinkler includes a fixed unit fixed to an inside of the housing, and a rotating unit rotatably supported at the fixed unit. The rotating unit includes a nozzle configured to discharge the cleaning liquid, and a rotation block configured to hold the nozzle.

Provided is an apparatus for treating a substrate including: a processing vessel having a processing space; a support unit for supporting the substrate in the processing space and rotating the substrate; a liquid supply unit for supplying a processing liquid to the substrate; and a heating unit for heating the substrate, wherein the support unit includes: a spin chuck; a rotation driver for rotating the spin chuck; a chuck pin installed on the spin chuck to be rotated with the spin chuck; a chuck pin moving unit for moving the chuck pin between a contact position wherein the chuck pin is in contact with a side portion of the substrate and an open position at which the chuck pin is spaced apart from the side portion of the substrate, and the chuck pin moving unit moves the chuck pin while the substrate is rotated by the spin chuck.

Provided is an apparatus for treating a substrate including: a processing vessel having a processing space; a support unit for supporting the substrate in the processing space and rotating the substrate; a liquid supply unit for supplying a processing liquid to the substrate; and a heating unit for heating the substrate, wherein the support unit includes: a spin chuck; a rotation driver for rotating the spin chuck; a chuck pin installed on the spin chuck to be rotated together with the spin chuck; a chuck pin moving unit for moving the chuck pin between a contact position wherein the chuck pin is in contact with a side portion of the substrate and an open position at which the chuck pin is spaced apart from the side portion of the substrate, and the chuck pin moving unit moves the chuck pin while the substrate is being rotated by the spin chuck.

The present disclosure relates to the field of semiconductor technology, and proposes a material supply system and a material supply method. The material supply system includes a storage device, a gas channel and a material channel, wherein the storage device comprises a first storage tank and a second storage tank that are independently disposed, and both the first storage tank and the second storage tank are used to store a supply material; the gas channel is connected to the first storage tank, the gas channel is connected to the second storage tank, and the gas channel is used to feed gas; and the material channel is connected to the first storage tank or the second storage tank in a switchable manner to receive the supply material discharged from the first storage tank or the second storage tank.

A semiconductor processing tool may include a processing tank. The semiconductor processing tool may include an arm arranged to hold a plurality of wafers over the processing tank such that wafers in the plurality of wafers are horizontally stacked over the processing tank. The semiconductor processing tool may include a fan arranged over the arm to permit an airflow to be provided across surfaces of the wafers in a vertical direction toward the processing tank. The semiconductor processing tool may include an exhaust system including at least one exhaust output and one or more exhaust pipe segments arranged substantially around the processing tank and connected to the at least one exhaust output. The one or more exhaust pipe segments may include a plurality of openings to receive exhaust air to be provided to the at least one exhaust output.

A semiconductor device inspection method including: depositing a dielectric material over a substrate to form an interconnect-level dielectric (ILD) layer; patterning the ILD layer to form via structures in the ILD layer; depositing an electrically conductive material to form an inspection layer on the ILD layer and in the via structures; imaging the inspection layer to generate image data; and detecting any defects in the via structures by analyzing the image data.

In order to provide a concentration control apparatus that, without adding any new sensors or the like, makes it possible to accurately estimate a quantity of source consumed inside a vaporization tank, and to perform highly accurate concentration control in accordance with the remaining quantity of source, there is provided a concentration control apparatus that, in a vaporizer that is equipped with at least a vaporization tank containing a liquid or solid source, a carrier gas supply path that supplies a carrier gas to the vaporization tank, and a source gas extraction path along which flows a source gas which is created by vaporizing the source and is then extracted from the vaporization tank, controls a concentration of the source gas and includes a concentration monitor that is provided on the source gas extraction path, and outputs output signals in accordance with a concentration of the source gas.

The substrate processing method includes a liquid film forming step of forming a liquid film of a sulfuric acid-containing liquid on a principal surface of a substrate, an ozone-containing gas exposing step of filling an ozone-containing gas inside a processing chamber capable of housing the substrate to expose the liquid film to the ozone-containing gas, and a substrate heating step of heating the substrate in a state that the substrate is disposed inside the processing chamber which is filled with the ozone-containing gas and the liquid film is also formed on the principal surface of the substrate.

A substrate processing apparatus capable of minimizing process defects by controlling mist in a processing bath is provided. The substrate treating apparatus comprises a first processing bath and a second processing bath disposed adjacent to each other in a first direction, a first partition wall disposed between the first processing bath and the second processing bath and having an entrance, through which a substrate passes, a transfer unit installed in the first processing bath and the second processing bath and for moving the substrate, a chemical solution supply unit installed in the first processing bath and for providing a chemical solution to the substrate, and a first exhaust unit disposed between the first processing bath and the second processing bath, connected to the first partition wall, comprising a plurality of exhaust holes disposed along a second direction different from the first direction, and for exhausting mist in the first processing bath.