A gate valve device includes a cleaning component, a first lifting component, and a second lifting component. The cleaning component is arranged on the second lifting component. The first lifting component is configured to control whether an opening on a side of a vacuum chamber close to a swing gate valve is in a closed state. The second lifting component is configured to, in a case that the opening on the side of the vacuum chamber close to the swing gate valve is in the closed state, control the cleaning component to clean the swing gate valve.

A substrate cleaning apparatus includes a first processing unit configured to supply a first processing liquid for removing a residue adhering to a substrate onto the substrate on which a metal film is exposed at a recess of a pattern; a second processing unit configured to supply, onto the substrate, a second processing liquid for forming a protective film insoluble to the first processing liquid; a third processing unit configured to supply, onto the substrate, a third processing liquid for dissolving the protective film; and a control unit. The control unit performs forming the protective film on the metal film in a state that an upper portion of the pattern is exposed from the protective film; removing the residue adhering to the upper portion of the pattern after the forming of the protective film; and removing the protective film from the substrate after the removing of the residue.

There are provided a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes: a stage on which a substrate is seated, in a chamber; and a treatment liquid supply apparatus supplying a treatment liquid containing a solvent and a solute onto the substrate, wherein the treatment liquid supply apparatus supplies the treatment liquid onto the substrate while moving from a center of the substrate to an outer peripheral surface of the substrate.

A semiconductor manufacturing equipment has a support platform and a substrate disposed over the support platform. A first electrical component is disposed over a first surface of the substrate. A second electrical component is disposed over a second surface of the substrate opposite the first surface of the substrate. A suction hood is disposed over the substrate. A gas is introduced over the substrate to circulate residue while drawing the residue vertically into the suction hood. The gas can be introduced with a gas nozzle or air knife. The gas can be introduced from a gas conduit disposed at least partially around the substrate. The gas conduit can extend completely around the substrate. The gas nozzles are sequentially placed around the gas conduit. The gas can be a stable or inert gas. The residue is displaced away from the second electrical component.

Methods, systems, and apparatus for cleaning and drying a tape-frame substrate are provided. In embodiments, an apparatus for supporting a tape-frame substrate includes a chuck having a first side and a second side opposite the first side, the first side having a convex surface configured to support the tape-frame substrate; and a plurality of channels extending through the chuck and having outlets along the first side, wherein the plurality of channels are configured to dispense fluid from the outlets along the convex surface of the first side. In embodiments, a support system includes the chuck and a holder configured to mount a tape-frame substrate to the chuck. The plurality of channels are configured to dispense fluid from the outlets and between the tape-frame substrate and the convex surface of the chuck when the tape-frame substrate is mounted to the chuck.

Systems and methods are described for supplying a rinsing liquid including ultrapure water and an ammonia gas. The system includes an ultrapure water source and a gas mixture source in fluid communication with a contactor. The gas mixture includes ammonia gas and a carrier gas. The system includes a control unit configured to adjust a flow rate of the ultrapure water source such that an operational pressure of the contactor remains below a pressure threshold. The system includes a compressor configured to remove a residual transfer gas out of the contactor. The contactor generates a rinsing liquid having ultrapure water and a concentration of the ammonia gas dissolved therein. The system includes a pump in fluid communication between the contactor and an outlet. The pump is configured to deliver the rinsing liquid having a gaseous partial pressure below the pressure threshold at the outlet.

A substrate drying device is provided that can suppress occurrence of a micro size defect (for example, a defect having a defect size of 20 nm or less). A substrate drying device 1 includes a substrate holding unit 11 which holds a substrate W, a gas generator 60 which generates a drying gas G including at least IPA vapor and for drying the substrate W, and a drying gas nozzle 30 which supplies the drying gas G to the surface WA of the substrate W. A filter 67 for filtering the drying gas G is provided in the gas generator 60. A defect size D allowed in a defect test after the drying of the substrate W is set to 20 nm or less and a ratio D/F of the defect size D and a filter size F of the filter 67 is set to 4 or more.

A cleaner comes into contact with a lower-surface center region of a substrate held by a first holder, so that the lower-surface center region is cleaned. The cleaner comes into contact with a lower-surface outer region of the substrate rotated by a second holder, so that the lower-surface outer region of the substrate is cleaned. During cleaning of the lower-surface center region, the second holder is rotated about a vertical axis while not holding the substrate. Alternatively, during cleaning of the lower-surface center region, the gas injector arranged between the cleaner and the second holder injects gas toward the substrate from a first height spaced apart from the substrate by a predetermined distance. Further, during drying of the lower-surface center region, the gas injector injects gas toward the substrate from a second height closer to the substrate than the first height.

A transport apparatus includes a hand, a drive mechanism, a cover member, and a gas supply member. The hand is configured to hold a wafer. The drive mechanism is configured to transport the wafer by moving the hand. The cover member has an opposing surface opposed to a surface of the wafer held by the hand and is formed with a plurality of holes opened in the opposing surface. The gas supply member is configured to supply an inert gas to the surface of the wafer via the plurality of holes of the cover member. The plurality of holes are formed in the opposing surface so that an opening ratio of an outer peripheral portion of the opposing surface is higher than an opening ratio of a central portion of the opposing surface.

A substrate processing system for treating a substrate includes a manifold and a plurality of injector assemblies located in a processing chamber. Each of the plurality of injector assemblies is in fluid communication with the manifold and includes a valve including an inlet and an outlet. A dose controller is configured to communicate with the valve in each of the plurality of injector assemblies and adjust a pulse width supplied to the valve in each of the plurality of injector assemblies based on at least one of manufacturing differences between the valves in each of the plurality of injector assemblies and non-uniformities of the valves in each of the plurality of injector assemblies to cause a desired dose to be supplied from the valve in each of the plurality of injector assemblies.