In an embodiment, a method includes: receiving a wafer from a first dilution tank; immersing the wafer in a deionization tank, wherein the deionization tank comprises a tank solution that comprises a deionizing solution; determining a metal ion concentration within the tank solution; performing remediation within the deionization tank in response to determining that the metal ion concentration is greater than a threshold value; and moving the wafer to a second dilution tank.

In an embodiment, a method includes: immersing a wafer in a bath within a cleaning chamber; removing the wafer out of the bath through a solvent and into a gas within the cleaning chamber; determining a parameter value from the gas; and performing remediation within the cleaning chamber in response to determining that the parameter value is beyond a threshold value.

The invention provides an improved semiconductor deposition method, which comprises providing a deposition machine, the deposition machine includes a chamber connected with a pipeline, putting a first wafer into the chamber, and performing a pipeline cleaning step, the pipeline cleaning step includes: cutting off the path between the pipeline and the chamber by turning off a plurality of valve switches, and introducing a gas from the pipeline to move along a first path of the pipeline. Then, a deposition step is performed on the first wafer to deposit a first material layer on the surface of the first wafer, the deposition step includes opening a plurality of valve switches to communicate the path between the pipeline and the chamber, and introducing the gas into the chamber along a second path of the pipeline.

A substrate processing apparatus includes: a batch processor configured to collectively process a lot including plural substrates; a single-wafer processor configured to process the substrates included in the lot one by one; and a transport portion configured to deliver the substrates one by one between the batch processor and the single-wafer processor. The batch processor includes a processing tank configured to store a processing liquid including a rinsing liquid. The transport portion includes a fluid supplier configured to supply, after receiving the substrates included in the lot in the processing tank and until delivering the substrates to the single-wafer processor, a low surface tension fluid having a lower surface tension than the rinsing liquid to at least one of the processing tank and the substrates.

A substrate cleaning system include a chamber and a substrate stage positioned within the chamber. The substrate stage is configured to secure a substrate for cleaning with a cleaning head. The substrate cleaning system includes a robot configured to transfer the substrate between a storage receptable and the substrate stage. The cleaning head includes a disposable electrode ribbon loaded on a roller assembly. The disposable electrode ribbon includes a positive electrode and a negative electrode and is configured to electrostatically clean the substrate by electrostatically removing particles from the substrate. The roller assembly is configured to advance the disposable electrode ribbon following cleaning of the substrate.

A substrate processing method includes: supplying a first processing liquid containing a chelating agent and a solvent from a first tank toward a substrate having a film of a metal formed on a surface thereof to generate a complex containing the metal and the chelating agent while rotating the substrate; and supplying a second processing liquid containing water toward the substrate to dissolve the complex in the second processing liquid while rotating the substrate, after the complex is generated.

Disclosed is a method for processing a substrate, comprising a liquid processing step of performing liquid processing on the substrate by supplying a processing liquid onto the substrate in a liquid processing chamber, a transfer step of transferring the substrate from the liquid processing chamber to a drying chamber, and a drying step of drying the substrate in the drying chamber. In the drying step, the substrate is dried while an edge region of the substrate other than a central region of the substrate is supported by a support unit, and in the liquid processing step, the liquid processing is performed on the substrate such that a height of the processing liquid remaining on the edge region of the substrate is greater than a height of the processing liquid remaining on the central region of the substrate when the liquid processing is completed in the liquid processing chamber.

Embodiments of the present disclosure provide a chuck structure of a semiconductor cleaning apparatus and a semiconductor cleaning apparatus. The chuck structure includes a chuck base, a gas inlet control device, and a first gas channel and a second gas channel arranged in the chuck base and both configured to spray a gas toward the to-be-processed workpiece. A gas spray direction of the first gas channel is inclined toward the outside of the surface of the to-be-processed workpiece that is opposite to the chuck base. A gas spray direction of the second gas channel is perpendicular to the surface of the to-be-processed workpiece that is opposite to the chuck base. The gas inlet control device is configured to selectively supply the gas to at least one of the first gas channel and the second gas channel to cause the to-be-processed workpiece to be able to float at different height positions over the chuck base. The above-mentioned chuck structure provided by embodiments of the present disclosure can satisfy the requirements of different process steps in addition to the to-be-processed workpiece being carried in a manner without physical contact with a wafer.

A substrate treating method, liquid and apparatus are provided which can reduce the amount of sublimable substance used for the drying of a substrate while reducing the collapse of pattern. The substrate treating method includes a step of supplying a liquid to the pattern-formed surface of the substrate, a step of solidifying the liquid on the pattern-formed surface to form a solidified body and a step of subliming the solidified body so as to remove it from the pattern-formed surface. The substrate treating liquid includes a molten sublimable substance and a solvent, the freezing point of the sublimable substance being higher than the freezing point of the solvent. When the sublimable substance and the solvent are separated, the sublimable substance is settled and in the solidification step, the settled sublimable substance is solidified to have a height equal to or higher than the height of a pattern.

A method includes: supplying a processing liquid to a center position of a substrate surface; shifting a supply position of the processing liquid from the center position to a first eccentric position; holding the supply position of the processing liquid at the first eccentric position and supplying a substitute liquid to a second eccentric position; shifting the supply position of the processing liquid in a direction away from the center position, and shifting a supply position of the substitute liquid to the center position; and supplying the processing liquid to the first eccentric position at a first flow rate, and reducing the flow rate of the processing liquid to a second flow rate after the supply position of the processing liquid starts to be shifted from the first eccentric position in the direction and until the supply position of the substitute liquid reaches the center position.