H01L21/6719

High-density substrate processing systems and methods

Exemplary substrate processing systems may include a factory interface and a load lock coupled with the factory interface. The systems may include a transfer chamber coupled with the load lock. The transfer chamber may include a robot configured to retrieve substrates from the load lock. The systems may include a chamber system positioned adjacent and coupled with the transfer chamber. The chamber system may include a transfer region laterally accessible to the robot. The transfer region may include a plurality of substrate supports disposed about the transfer region. Each substrate support of the plurality of substrate supports may be vertically translatable. The transfer region may also include a transfer apparatus rotatable about a central axis and configured to engage substrates and transfer substrates among the plurality of substrate supports. The chamber system may also include a plurality of processing regions vertically offset and axially aligned with an associated substrate support.

METHOD AND/OR SYSTEM FOR COATING A SUBSTRATE
20230096972 · 2023-03-30 ·

A system and/or method for coating a substrate. The system may include a chuck for holding and rotating the substrate, a dispensing subsystem for dispensing a coating material onto the substrate, and a shield member. The shield member may be movable towards and away from the substrate during the coating procedure. The shield member may have an inverted funnel shape. The shield member may include a central chamber through which a solvent vapor flows and a peripheral chamber that is fluidly separated from the central chamber through which a gas flows. During a coating procedure, the shield member may be moved very close to the substrate and the solvent vapor and gas may flow onto the substrate to create a solvent rich ambient around the substrate and prevent aerosols of the coating material from redepositing onto the substrate after being flung off due to spinning of the substrate.

TRANSLATING AND ROTATING CHUCK FOR PROCESSING MICROELECTRONIC SUBSTRATES IN A PROCESS CHAMBER

Cleaning systems and methods for semiconductor fabrication use rotatable and translatable chuck assemblies that incorporate a compact drive system to cause chuck rotation. The system uses an offset drive gear that drives a ring gear. This reduces components whose friction or lubricants might generate undue contamination. The low friction chuck functionality of the present invention is useful in any fabrication tool in which a workpiece is supported on a rotating support during a treatment. The chuck is particularly useful in cryogenic cleaning treatments.

METHOD OF ISOLATING THE CHAMBER VOLUME TO PROCESS VOLUME WITH INTERNAL WAFER TRANSFER CAPABILITY

Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a plurality of apertures. The systems may include a plurality of lid stacks. The systems may include a plurality of substrate supports. The systems may include a plurality of peripheral valves. Each peripheral valve may be disposed in one of the processing regions. Each peripheral valve may include a bottom plate coupled with the chamber body. The peripheral valve may include a bellow. The bellow may be coupled with the bottom plate. The peripheral valve may include a sealing ring having a body defining a central aperture. A bottom surface of the body may be coupled with the bellow. The body may define a recess having a diameter greater than that of a support plate of a substrate support.

METHOD AND APPARATUS FOR LOW TEMPERATURE SELECTIVE EPITAXY IN A DEEP TRENCH
20230036426 · 2023-02-02 ·

Embodiments of the present disclosure generally relate to methods for forming epitaxial layers on a semiconductor device. In one or more embodiments, methods include removing oxides from a substrate surface during a cleaning process, flowing a processing reagent containing a silicon source and exposing the substrate to the processing reagent during an epitaxy process, and stopping the flow of the processing reagent. The method also includes flowing a purging gas and pumping residues from the processing system, stopping the flow of the purge gas, flowing an etching gas and exposing the substrate to the etching gas. The etching gas contains hydrogen chloride and at least one germanium and/or chlorine compound. The method further includes stopping the flow of the at least one compound while continuing the flow of the hydrogen chloride and exposing the substrate to the hydrogen chloride and stopping the flow of the hydrogen chloride.

SEAL MECHANISMS FOR LOAD PORTS
20230094114 · 2023-03-30 ·

The disclosure describes devices and systems for a two-sided seal for a load port, and methods for using said seal. A factory interface for an electronic device manufacturing system can include a load port for receiving a substrate carrier. The load port can include a frame adapted for connecting the load port to a factory interface, the frame comprising a transport opening. The load port can also include a seal coupled to the frame. The seal can include a first contact point configured to engage with a load port door when the load port door is in a first position, and configured to disengage with the load port door when the load port door is in a second position and a second contact point configured to engage with a front of a substrate carrier when the substrate carrier is docked on the load port.

GATE VALVE, SUBSTRATE PROCESSING SYSTEM, AND METHOD OF OPERATING GATE VALVE
20230094622 · 2023-03-30 ·

A gate valve provided in a boundary portion between two sections to block communication between the two sections, the gate valve includes a base, a first moving mechanism installed on the base and configured to move a first movement body along a first linear track, a second moving mechanism installed on the first movement body, and configured to operate at a timing different from the first moving mechanism and to move a second movement body along a second linear track orthogonal to the first linear track, and a valve body installed on the second movement body and configured to come into contact with a contact surface so as to perform sealing. One of the first linear track and the second linear track is parallel to a direction orthogonal to the contact surface.

INTEGRATED TOOL LIFT

Semiconductor processing tools are provided that include a support framework, semiconductor processing chambers arranged along an axis, an attachment point connected to the support framework, and a detachable hoist system. Each chamber includes a base portion fixedly mounted relative to the support framework and a removable top cover including one or more hoisting features. The detachable hoist system includes a vertical member including a top end including a complementary attachment point and a bottom end including a movement mechanism supported by a floor. The complementary attachment point is detachably connected to the attachment point. The detachable hoist system further includes a hoist arm connected to the vertical member. The hoist arm is configured to pivot about a vertical axis substantially perpendicular to the axis, and includes one or more links and a hoist feature engagement interface configured to engage with the hoisting features of any of the removable top covers.

APPARATUS AND METHOD FOR TREATING SUBSTRATE

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a treating bath having an accommodation space for accommodating a treating liquid; a support member configured to support at least one substrate in a vertical posture at the accommodation space; and a posture changing robot configured to change a posture of a substrate immersed in the treating liquid from the vertical posture to a horizontal posture, and wherein the posture changing robot comprises: a body configured to hold the substrate thereon; and a liquid supply member configured to supply a wetting liquid to the substrate placed on the body.

ROBOT FOR SIMULTANEOUS SUBSTRATE TRANSFER

Exemplary substrate processing systems may include a transfer region housing defining an internal volume. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft concentric with and counter-rotatable to the first shaft. The transfer apparatus may include a first end effector coupled with the first shaft. The first end effector may include a plurality of first arms. The transfer apparatus may also include a second end effector coupled with the second shaft. The second end effector may include a plurality of second arms having a number of second arms equal to the number of first arms of the first end effector.