Methods for aligning a processing chamber using a centering ring and processing chambers having the centering ring are describes. The method includes determining an average central position for the centering ring based on the concentricity of the centering with the support surfaces and adjusting average position of centering ring to a final position based on the average central position.

A semiconductor processing tool is disclosed, the tool having a frame forming at least one chamber with an opening and having a sealing surface around a periphery of the opening, a door configured to interact with the sealing surface for sealing the opening, the door having sides perpendicular to the door sealing surface and perpendicular to a transfer plane of a substrate, and at least one drive located on the frame to a side of at least one of the sides that are substantially perpendicular to the door sealing surface and substantially perpendicular to the transfer plane of the substrate, the drive having actuators located at least partially in front of the sealing surface and the actuators being coupled to one of the sides of the door for moving the door from a sealed position. The at least one drive is located outside of a substrate transfer zone.

A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

A baking apparatus, may include a processing chamber including a lower chamber and an upper chamber connected by a ring shutter; a baking plate in the processing chamber adjacent to a region in which the lower chamber and the ring shutter overlap; an active flow controller including a first module and a second module in the lower chamber adjacent to the baking plate; a first auxiliary flow controller on a lower part of the ring shutter, adjacent to the lower chamber; and a second auxiliary flow controller in the upper chamber adjacent to the ring shutter. The active controller may be configured to move based on movement of the first module in a first direction perpendicular to an upper surface of the baking plate. The active flow controller may be configured to control airflow around the second module by movement of the second module.

A vacuum processing apparatus includes: a stage on which a substrate is placed; and a shutter configured to be able to move between a shielding position at which the stage is covered and a retracted position that is retracted from the shielding position, wherein the shutter arranged at the shielding position forms a processing space between the shutter and the stage, and includes: a gas supplier configured to supply a gas into the processing space; and a gas exhauster provided closer to a center side of the processing space than the gas supplier and configured to exhaust the gas from the processing space.

Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.

Provided herein are methods and apparatus for processing a substrate by exposing the substrate to plasma to simultaneously (i) etch features in an underlying material (e.g., which includes one or more dielectric materials), and (ii) deposit a upper mask protector layer on a mask positioned over the dielectric material, where the upper mask protector layer forms on top of the mask in a selective vertically-oriented directional deposition. Such methods and apparatus may be used to achieve infinite etch selectivity, even when etching high aspect ratio features.

A substrate processing apparatus includes: a substrate holder; a processing liquid supply nozzle that supplies a processing liquid to a substrate held by the substrate holder; a liquid receiving cup that receives the processing liquid supplied to the substrate; a processing chamber that accommodates the liquid receiving cup and has an opening at an upper side; a shield that shields a region outside the liquid receiving cup in the opening of the processing chamber; a driver that moves the liquid receiving cup between a first processing position separated from the shield and a second processing position above the shield; and a processing liquid guide that causes a processing liquid dropped onto the shield to fall downward.

Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.

The present invention relates to a substrate treatment apparatus including: a substrate support assembly having a spin head adapted to seat a substrate thereonto; fluid supply unit for supplying fluid to the substrate; a bowl assembly having a plurality of bowls overlaid another outwardly in a radial direction thereof and surrounding the substrate support assembly; an ascending and descending unit for moving up and down the bowl assembly; and a chamber for accommodating the substrate support assembly, the fluid supply unit, the bowl assembly, and the ascending and descending unit, wherein the chamber is configured to have a plurality of process exhaust parts for performing exhaust from the inside of the bowl assembly and an environment exhaust part for performing exhaust from the outside of the bowl assembly.