Provided is a wafer notch automated aligner, including a main body, a wafer rotation mechanism, and a wafer positioning mechanism. The main body has a wafer boat placement portion. The wafer rotation mechanism is disposed on the main body and includes a rotor, the rotor extends through the wafer boat placement portion, and an angle between an axis of the rotor and the main body is between 0° and 90°. The wafer positioning mechanism is disposed on the main body and includes a positioning member, the positioning member extends through the wafer boat placement portion, and an axis of the positioning member is parallel to the axis of the rotor. Hence, a plurality of wafers is disposed in a stepped arrangement by the inclined rotor and the inclined positioning member, and the wafer notch automated aligner can rotate wafers, align notches, and identify wafer identifications.

The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing through a pressure change between a high pressure and a low pressure. The substrate processing apparatus includes: a process chamber (100) comprising a chamber body (110) which has an opened upper portion and in which a through-hole (150) is defined in a bottom surface thereof, and a top lid (140) coupled to the upper portion of the chamber body (110) to define an inner space (S1); a substrate support (200) comprising a substrate support plate (210) which is installed in the process chamber (100) and on which a substrate (1) is seated on a top surface thereof, and a substrate support shaft (220) installed to pass through the through-hole (150) so as to support the substrate support plate (210).

A substrate processing apparatus capable of solving a misalignment problem of chamber portions due to thermal deformation or a vacuum force during high-temperature processing includes a first plate; a second plate on the first plate; a position control unit configured to change a relative position of the second plate with respect to the first plate; and a support unit configured to permit movement of the second plate while supporting the second plate.

Provided is a substrate treating apparatus including: a fluid supply unit supplying a supercritical fluid to the treatment space, a plurality of components installed in the fluid supply line; and a detection member detecting whether or not metal particles are released from the component. The detection member includes: an upstream detection port connected to the fluid supply line upstream from a first component which is one of the plurality of components; a downstream detection port connected to the fluid supply line downstream from the first component; and a detector provided to be coupled to a selected detection port between the upstream detection port and the downstream detection port, and detecting metal particles from a fluid flowing through the detection port from the fluid supply line.

A method includes measuring a subset of property values within a manufacturing chamber during a process performed on a substrate within the manufacturing chamber. The method further includes determining property values in the manufacturing chamber at locations removed from the locations the measurements are taken. The method further includes performing a corrective action based on the determined properties.

Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.

A substrate processing apparatus according to the invention executes a substrate processing using a supercritical processing fluid. In a processing container, a first introduction port is formed in such a manner as to face space over a substrate in the processing space and a second introduction port is formed in such a manner as to face space under a support tray in the processing space. A first discharge port is formed in such a manner as to face space over the support tray and a second discharge port is formed in such a manner as to face the space under the support tray. The supercritical processing fluid having a higher temperature is supplied into the processing space through the first introduction port, and the supercritical processing fluid having a lower temperature is supplied into the processing space through the second introduction port.

The present disclosure provides a chamber device, which includes a housing, which defines an cavity therein, a first valve, provided on a first side of the housing, and configured to switch between a closed condition thereof, and an opened condition thereof where the housing is in communication with one of the first pressure environment and the second pressure environment therethrough, a switching device, fixed to the housing, and configured to align the first valve with a respective inlet of the one of the first pressure environment and the second pressure environment, a second valve, provided on a second side of the housing opposite to the first side, and configured to communicate the cavity with the first pressure environment or disconnect the cavity from the first pressure environment, and a pressure regulating device, provided on the housing and in communication with the cavity .

Various embodiments herein relate to methods and apparatus for etching recessed features on a semiconductor substrate. The techniques described herein can be used to form high quality recessed features with a substantially vertical profile, low bowing, low twisting, and highly circular features. These high quality results can be achieved with a high degree of selectivity and a relatively high etch rate. In various embodiments, etching involves exposing the substrate to plasma generated from a processing gas that includes a chlorine source, a carbon source, a hydrogen source, and a fluorine source. The chlorine source may have particular properties. In some cases, particular chlorine sources may be used. Etching typically occurs at low temperatures, for example at about 25C or lower.

According to an embodiment of the present invention, there are provided an exhaust assembly capable of uniformly forming an air flow in an exhaust step of discharging a gas to the outside, and a liquid processing apparatus and substrate processing equipment including the exhaust assembly. According to the present invention, the exhaust assembly that discharges a gas generated in a substrate processing process includes at least two or more intake ports into which the gas flows, a body portion that communicates with the intake ports and provides symmetrical paths for discharging the gas, a guide portion that is installed to guide a flow of the gas at the body portion, and an exhaust port from which the gas is discharged. The guide portion includes a flow guide that is installed to be adjacent to at least one of the intake ports and guides a direction of the gas to equally divide the flow of the gas, and a flow-rate guide that is installed around the intake port most adjacent to the exhaust port among the intake ports and is formed to reduce a cross-sectional area of a flow path of the gas.