The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus in which a substrate is processed at a high pressure and a low pressure. The present invention discloses a substrate processing apparatus including: a process chamber having an inner space; a substrate support on which a substrate is seated on a top surface thereof; an inner lid part which is installed to be vertically movable in the inner space and of which a portion is in close contact with the bottom surface of the process chamber to define a sealed processing space in which the substrate support is disposed; a gas supply part configured to supply a process gas to the processing space; and an inner lid driving part configured to drive the vertical movement of the inner lid part.

The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing through a pressure change between a high pressure and a low pressure. The present invention discloses a substrate processing apparatus including; a process chamber (100) comprising a chamber body (110) which has an opened upper portion, in which an installation groove (130) is defined at a central side of a bottom surface (120) thereof, and which comprises a gate (111) for loading/unloading a substrate (1) is disposed at one side thereof and a top lid (140) coupled to the upper portion of the chamber body (110) to define an inner space, a substrate support (200) installed to be inserted into the installation groove (130) of the chamber body (110) and having a top surface on which the substrate (1) is seated.

Provided is a substrate treating method. The substrate treating method includes: a first supercritical processing operation of loading a first substrate into a supercritical chamber and supercritically processing the first substrate in the supercritical chamber; a resting operation of maintaining the supercritical chamber in an empty state for a first time until a temperature in the supercritical chamber becomes a preset temperature by opening the supercritical chamber after the first substrate is unloaded from the supercritical chamber; and a second supercritical processing operation of loading a second substrate into the supercritical chamber and supercritically processing the second substrate in the supercritical chamber.

An apparatus for treating a substrate includes a plurality of heat treatment chambers and a plurality of sensors that determine whether the plurality of heat treatment chambers are mounted. The number of the plurality of sensors corresponds to the number of the plurality of heat treatment chambers. The plurality of sensors are B contact sensors.

Metrology slot plates, processing chamber lids and processing chambers having metrology slot plates are described. Each of the metrology slot plates independently comprises one or more of a plate blank, a reflectometer, a capacitance sensor, a gas flow meter, a manometer, a pyrometer, a distance sensor (laser) or an emissometer.

Provided is a heating unit including: a heating plate for heating a substrate; a heater installed in the heating plate; and a control unit for controlling the heater, in which wherein the heater includes: a first heater; and a second heater installed at a position different from a position of the first heater, and the control unit includes: a power source for transferring power to at least one of the first heater and the second heater; and a switching module for connecting the first heater and the second heater in series or connecting the first heater and the second heater in parallel.

Embodiments of heated lids for a process chamber are provided herein. In some embodiments, a heated lid includes: a body having a central region and a peripheral region, wherein the body includes a central opening in the central region, wherein the peripheral region includes a plurality of vertical slots that extend into an upper surface of the body and arranged along a circle to provide a thermal break, and wherein the body includes one or more annular plenums that extend into the upper surface of the body and a plurality of holes extending through a bottom surface of the one or more annular plenums to a lower surface of the body; a first heater ring having one or more heating elements disposed therein, wherein the first heater ring is coupled to the central region of the body; and a second heater ring having one or more heating elements disposed therein.

The present disclosure provides a substrate treating apparatus, in which stability is secured by performing a process under a lower pressure condition, and a substrate treating method using the same. The substrate treating apparatus comprises a chamber including a housing and a treating region, wherein a substrate on which a rinse liquid remains is loaded into the chamber, a supply port installed in the housing and for supplying a first drying gas and a second drying gas to the treating region, a first supply line connected to the supply port, and through which the first drying gas is moved, and a second supply line connected to the supply port, and through which the second drying gas is moved, wherein the first drying gas is a gas below a first temperature, and the second drying gas is a gas equal to or above the first temperature, wherein the second drying gas dries the rinse liquid remaining on the substrate.

A substrate processing apparatus includes: a processing vessel having an opening; a cover body configured to close the opening; a cover body moving mechanism configured to move the cover body between a closed position and an open position; a substrate holder configured to horizontally hold a substrate; a fluid supply device configured to supply a processing fluid in a supercritical state and a fluid in a gas state to the processing vessel; and a controller configured to control the fluid supply device such that the processing fluid is supplied to the processing vessel in a first state in which the substrate is held by the substrate holder and the cover body is located at the closed position, and such that the fluid is supplied to the processing vessel in a second state in which the cover body is located at the open position.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing for providing a treating space for treating a substrate within; a support unit for supporting the substrate in the treating space; a bottom supply port for supplying a process fluid to the treating space; and a filler member positioned below the substrate supported on the support unit in the treating space, and wherein the filler member forms a buffer space facing the bottom supply port, and a passage is formed between the filler member and an inner wall of the housing and flows the process fluid which is introduced to the buffer space in a direction of the substrate.