A top lid capable of minimizing thermal deformation when a substrate processing temperature increases includes a support for supporting the top lid, the support protruding integrally from one surface of the top lid.

Cleaning systems and methods for semiconductor fabrication use rotatable and translatable chuck assemblies that incorporate a compact drive system to cause chuck rotation. The system uses an offset drive gear that drives a ring gear. This reduces components whose friction or lubricants might generate undue contamination. The low friction chuck functionality of the present invention is useful in any fabrication tool in which a workpiece is supported on a rotating support during a treatment. The chuck is particularly useful in cryogenic cleaning treatments.

Provided is a pump for supplying a liquid. The pump includes: a tube including a pump chamber communicating with a chemical liquid inlet and a chemical liquid outlet, and configured to discharge a chemical liquid through a change in volume due to contraction and expansion; and a driving unit contracting or expanding the tube in a longitudinal direction, in which the tube includes: a flexible tube body including a pump chamber which has an increased internal volume when is contracted in a longitudinal direction and has a decreased internal volume when is expanded in the longitudinal direction, and which has a jar shape of which a radius is increased from the chemical liquid inlet to a center of the pump chamber, and the radius is decreased from the pump chamber to the chemical liquid outlet; a first flange provided at one end of the tube body and including the chemical liquid inlet; and a second flange provided at the other end of the tube body and including the chemical liquid outlet.

Aspects of the present disclosure relate to methods, systems, and apparatus for conducting a radical treatment operation on a substrate prior to conducting an annealing operation on the substrate. In one implementation, a method of processing semiconductor substrates includes pre-heating a substrate, and exposing the substrate to species radicals. The exposing of the substrate to the species radicals includes a treatment temperature that is less than 300 degrees Celsius, a treatment pressure that is less than 1.0 Torr, and a treatment time that is within a range of 8.0 minutes to 12.0 minutes. The method includes annealing the substrate after the exposing of the substrate to the species radicals. The annealing includes exposing the substrate to molecules, an anneal temperature that is 300 degrees Celsius or greater, an anneal pressure that is within a range of 500 Torr to 550 Torr, and an anneal time that is less than 4.0 minutes.

A material layer deposition method includes supporting a substrate in a preclean module and exposing the substrate to a preclean etchant while supported within the preclean module. The substrate is transferred to a deposition module and exposed to an adsorbate while supported within the deposition module. A material layer is the deposited onto the substrate while supported within the deposition module subsequent to exposing the substrate to the adsorbate. Semiconductor processing systems and computer program products are also described.

There is provided a vacuum processing apparatus in which at least one of the processing units includes a lower member and an upper member mounted on the lower member to be attachable and detachable that configure the vacuum container, a turning shaft member which is attached to an outer circumferential part of the base plate between the work space and the vacuum container, and has a turning shaft that moves from above the base plate when the turning shaft is connected to the lower member and the lower member turns around the connected part, and a maintenance member including an arm which is disposed above the turning shaft member and turns in a horizontal direction as the upper member is suspended, and in which the lower member is configured to be fixable at the position at a predetermined angle within a range of an angle at which the lower member is capable of turning around the shaft, and to be vertically movable as the arm of the maintenance member fixes the position above a center portion of the lower member of which the position is fixed within a range of the angle at which the lower member is capable of turning, and the upper member is suspended.

A substrate liquid processing apparatus includes an inner tub 34A having a top opening and storing a processing liquid therein; an outer tub 34B provided outside the inner tub; a first cover body 71 configured to move between a closing position where a first region of the top opening is closed and an opening position where the first region is opened; and a second cover body 72 configured to move between a closing position where a second region of the top opening is closed and an opening position where the second region is opened. The first cover body has a bottom wall 711R and a sidewall 712R extended upwards therefrom, and the second cover body has a bottom wall 721R and a sidewall 722R extended upwards therefrom. Further, when being placed at the closing positions, the sidewalls closely face each other with a gap G having a height H.

An alignment module for housing and cleaning masks. The alignment module comprises a mask stocker, a cleaning chamber, an alignment chamber, an alignment stage a transfer robot. The mask stocker is configured to house a mask cassette configured to store a plurality of masks. The cleaning chamber is configured to clean the plurality of masks by providing one or more cleaning gases into a chamber after a mask is inserted into the cleaning chamber. The alignment stage is configured to support a carrier and a substrate. The transfer robot is configured to transfer a mask from one or more of the alignment stage and the mask stocker to the cleaning chamber.

Exemplary substrate processing systems may include a transfer region housing defining an internal volume. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft concentric with and counter-rotatable to the first shaft. The transfer apparatus may include a first end effector coupled with the first shaft. The first end effector may include a plurality of first arms. The transfer apparatus may also include a second end effector coupled with the second shaft. The second end effector may include a plurality of second arms having a number of second arms equal to the number of first arms of the first end effector.

Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.