A substrate processing chamber includes a housing providing a process space; a spin apparatus provided in the housing; and a fluid spraying nozzle configured to spray fluid into the process space, wherein the spin apparatus includes: a spin chuck configured to support a substrate; a rotation driving part configured to rotate the spin chuck; and a weight sensor configured to measure a weight of the substrate supported on the spin chuck.

In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

A film formation method includes: preparing a substrate including, on its surface, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed; selectively forming a self-assembled monolayer in the first region, among the first region and the second region; and forming a desired target film in the second region, among the first region and the second region, by using the self-assembled monolayer formed in the first region, wherein the selectively forming the self-assembled monolayer includes: selectively forming the self-assembled monolayer in the first region by using a first processing liquid including a first raw material of the self-assembled monolayer; and modifying the self-assembled monolayer, by using a second processing liquid including a second raw material of the self-assembled monolayer at a concentration different from a concentration of the first processing liquid.

Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes: a first process chamber having a first treating space therein; a second process chamber having a second treating space therein; and an exhaust unit configured to exhaust atmospheres of the first treating space and the second treating space, in which the exhaust unit includes an integrated exhaust line in which a pressure reduction unit is installed, a first exhaust line configured to connect the first process chamber and a first point of the integrated exhaust line, a second exhaust line configured to connect the first process chamber and a second point of the integrated exhaust line, and an interference alleviation unit configured to alleviate exhaust interference between the first process chamber and the second process chamber.

Disclosed herein are embodiments of a transfer chamber robot and methods of using the same. In one embodiment, a process tool for an electronic device manufacturing system comprises a transfer chamber, process chamber coupled to the transfer chamber, and a transfer chamber robot. The transfer chamber robot is configured to transfer substrates to and from the process chamber, and comprises a sensor configured to take measurements inside the process chamber.

Provided is a substrate drying apparatus. The substrate drying apparatus may include an upper chamber body including an inlet configured to introduce a supercritical fluid into a chamber space, a lower chamber body including an outlet configured to discharge the supercritical fluid outside the chamber space, and a stage configured to be loaded with a wet substrate and arranged in the chamber space, wherein the upper chamber body and the lower chamber body are configured such that the chamber space is closed by bringing the upper chamber body into contact with the lower chamber body, and the chamber space is opened by separating the upper chamber body from the lower chamber body, and the stage comprises a heater configured to heat the substrate and the supercritical fluid.

A substrate processing apparatus performs increasing a pressure within a processing vessel up to a processing pressure higher than a threshold pressure of a processing fluid by supplying the processing fluid into the processing vessel in which a substrate having thereon a liquid is accommodated; and supplying the processing fluid into the processing vessel and draining the processing fluid while maintaining the pressure within the processing vessel at a level allowing the processing fluid to be maintained in a supercritical state. The increasing of the pressure includes: increasing the pressure to a first pressure; and increasing the pressure to the processing pressure from the first pressure. A temperature of the substrate is controlled to a first temperature in the increasing of the pressure to the first pressure, and is controlled to a second temperature higher than the first temperature in the increasing of the pressure to the processing pressure.

A conveying device, a conveying method, and an evaporation apparatus are provided. The conveying device comprises a carrying mechanism for carrying a substrate; and a fastening mechanism for fastening the substrate on the carrying mechanism in a mechanical manner. In the conveying device, the substrate is fastened on the carrying mechanism in a mechanical manner by the fastening mechanism. As compared with electrostatic fastening and adhesive fastening, this reduces damage to the substrate, increases the reliability for fastening the substrate, and makes it easy to receive and detach the substrate. (FIG. 1)

A substrate processing apparatus can suppress particle generation on a substrate, and can reduce a consumption amount of a processing liquid. A substrate processing apparatus 1 includes a processing chamber 30 having a processing space 31 in which a substrate W is processed; a vaporizing tank 60, configured to store the processing liquid therein, having a vaporization space 61 in which the stored processing liquid is allowed to be vaporized; a decompression driving unit 70 configured to decompress the vaporization space 61; and a control unit 18. The control unit 18 vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 without through the processing space 31, and then, vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 through the processing space 31, and supplies an inert gas into the vaporization space 61.

A semiconductor processing system processes semiconductor wafers in a process chamber. The process chamber includes semiconductor process equipment for performing semiconductor processes within the chamber. The process chamber includes a heat pipe integrated with one or more components of the process chamber. The heat pipe effectively transfers heat from within the chamber to an exterior of the chamber.