A substrate transfer device, includes: a first planar motor installed in a first chamber and having an array of coils; a second planar motor installed in a second chamber connected to the first chamber and having an array of coils; a pair of transfer units configured to move on at least one of the first planar motor and the second planar motor and configured to transfer a substrate; and a controller configured to control supply of electric current to the coils of the first planar motor and the second planar motor.

The present disclosure provides a shielding mechanism and a thin-film-deposition equipment using the same, wherein the shielding mechanism includes two shield members and a driver. The driver includes a motor and a shaft seal. The motor interconnects the two shield members via the shaft seal, and such that to drive the two shield members to sway in opposite directions and to switch between an open state and a shielding state. Furthermore, each of the two shield members is formed with at least one cavity, for reducing weights thereof and loading of the motor and the driver.

Provided is a support unit including a support plate on which the substrate is placed, and a support protrusion provided on the support plate and separating the substrate from the support plate, wherein the support plate includes a first protrusion protruding from an upper surface of the support plate, wherein the first protrusion is provided in a support region provided by the support protrusion.

A substrate treating apparatus is provided. The substrate treating apparatus includes an atmospheric pressure transfer module provided with a first transfer robot having a first hand with a substrate placed thereon; a vacuum transfer module provided with a second transfer robot having a second hand with a substrate placed thereon; a load-lock chamber positioned between the atmospheric pressure transfer module and the vacuum transfer module, and having an inner space convertible between an atmospheric pressure and a vacuum atmosphere; a process chamber coupled to the vacuum transfer module and treating the substrate; and a ring carrier supported by the first transfer robot or the second transfer robot for a transfer of a ring member. The ring carrier comprises a plate having the ring member placed thereon and at least one leg protruding from a bottom surface of the plate and placed at the first hand or the second hand.

In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.

Implementations of the present disclosure generally relate to one or more flow ratio controllers and one or more gas injection inserts in the semiconductor processing chamber. In one implementation, an apparatus includes a first flow ratio controller including a first plurality of flow controllers, a second flow ratio controller including a second plurality of flow controllers, and a gas injection insert including a first portion and a second portion. The first portion includes a first plurality of channels and the second portion includes a second plurality of channels. The apparatus further includes a plurality of gas lines connecting the first and second pluralities of flow controllers to the first and second pluralities of channels. One or more gas lines of the plurality of gas lines are each connected to a channel of the first plurality of channels and a channel of the second plurality of channels.

There is provided a technique that includes a process chamber configured to process a substrate; a transfer chamber in communication with a lower portion of the process chamber, and configured to transfer the substrate to a substrate support disposed in the process chamber, and a heating chamber in communication with a lower portion of the transfer chamber, and configured to heat the substrate support and the substrate.

An alignment module for positioning a mask on a substrate comprises a mask stocker, an alignment stage, and a transfer robot. The mask stocker houses a mask cassette that stores a plurality of masks. The alignment stage is configured to support a carrier and a substrate. The transfer robot is configured to transfer one of the one or more masks from the mask stocker to the alignment stage and position the mask over the substrate. The alignment module may be part of an integrated platform having one or more transfer chambers, a factory interface having a substrate carrier chamber and one or more processing chambers. A carrier may be coupled to a substrate within the substrate carrier chamber and moved between the processing chambers to generate a semiconductor device.

A chamber apparatus comprises a lower and an upper chamber body, and a gasket member. The lower chamber body defines a receiving region and a first receiving groove. The upper chamber body disposed above the lower chamber body and defines a second receiving groove projectively align to the first receiving groove. The second receiving groove is configured to establish sealing coupling with the lower chamber body so as to form a chamber enclosure region. The gasket member includes a conductive member and an elastomeric member. The conductive member configured to laterally surround the receiving region and respectively fit into the lower chamber body and the upper chamber body. The elastomeric member is protruded from the conductive member and extended toward the receiving region, configured to be compressed by the upper and the lower chamber body so as to seal the chamber enclosure region.

A substrate processing method includes forming an adsorption layer on a substrate by supplying a silicon-containing gas to the substrate; performing a modification by generating plasma containing He; and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer, wherein the forming the adsorption layer, the performing the modification, and the generating the plasma are repeated to form a silicon-containing film.