A substrate processing device capable of preventing deformation of a substrate during a process includes a substrate supporting unit having a contact surface that comes into contact with an edge of a substrate to be processed, wherein the substrate supporting unit includes a protruding (e.g. embossed) structure protruding from a base to support deformation from the inside of the edge of the substrate to be processed.

Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.

An apparatus for securing a wafer includes a chuck, at least one O-ring disposed on the chuck, a vacuum system connected to the chuck, such that the vacuum system comprises a plurality of vacuum holes through the chuck connected to one or more vacuum pumps, and a controller configured to control the height of the at least one O-ring relative to the top surface of the chuck. The controller is connected to pressure sensors capable of detecting a vacuum. The at least one O-ring may include a plurality of O-rings.

A substrate processing apparatus (100), comprising a reaction chamber (20) having an upper portion (20a) and a lower portion (20b) sealing an inner volume of the reaction chamber (20) for substrate processing, the lower portion (20b) being movable apart from the upper portion (20a) to form a substrate loading gap therebetween, a substrate support system comprising a support table (31) and at least one support element (70) vertically movable in relation to the support table (31) and extending through the support table (31) to receive a substrate within the reaction chamber (20), and a stopper (90) stopping a downward movement of the at least one support element (70) at a substrate loading level.

A bonding apparatus includes a first holder, a second holder, an attracting pressure generator and a lift pin. The first holder is configured to hold a first substrate. The second holder, disposed at a position facing the first holder, has an attraction surface configured to attract a second substrate to be bonded to the first substrate. The attracting pressure generator is configured to generate an attracting pressure in the attraction surface. The lift pin is configured to space the second substrate on the attraction surface apart from the second holder. The second holder is provided with a space including an opening through which the lift pin passes, and the space is controlled to have a pressure lower than an atmospheric pressure.

Support plates for localized heating in thermal processing systems to uniformly heat workpieces are provided. In one example implementation, localized heating is achieved by modifying a heat transmittance of a support plate such that one or more portions of the support plate proximate the areas that cause cold spots transmit more heat than the rest of the support plate. For example, the one or more portions (e.g., arears proximate to one or more support pins) of the support plate have a higher heat transmittance (e.g., a higher optical transmission) than the rest of the support plate. In another example implementation, localized heating is achieved by heating a workpiece via a coherent light source through a transmissive support structure (e.g., one or more support pins, or a ring support) in addition to heating the workpiece globally by light from heat sources.

A chuck for a laser beam wafer dicing equipment includes a wafer support plate having an upper surface for holding a wafer disposed on a dicing tape. The upper surface includes a topographically structured surface region that partly or completely overlaps an edge of the wafer when the wafer disposed on the dicing tape is placed on the upper surface. The topographically structured surface region provides for a reduction in an area of contact between the upper surface and the dicing tape.

Aspects generally relate to substrate support apparatus and systems having elevated surfaces for heat transfer between the elevated surfaces and a substrate, and the methods of using the same. In one aspect, the elevated surfaces are disposed between a recessed surface and a plurality of support surfaces of a plurality of support protrusions that extend from the recessed surface. In one aspect, the elevated surfaces are disposed between a base surface and a plurality of support surfaces of a plurality of support protrusions that extend from the base surface. During a substrate processing operation, heat is transferred to the substrate through a plurality of cavities disposed between the elevated surfaces and a backside surface of the substrate.

Systems, apparatuses, and methods are provided for manufacturing a wafer clamp having hard burls. The method can include providing a first layer that includes a first surface. The method can further include forming a plurality of burls over the first surface of the first layer. The forming of the plurality of burls can include forming a subset of the plurality of burls to a hardness of greater than about 6.0 gigapascals (GPa).

A semiconductor manufacturing apparatus includes a process chamber. A chuck is disposed in the process chamber. The chuck is configured to hold a substrate thereon. A transfer unit is adjacent to the process chamber. The transfer unit includes a transfer hand configured to transfer the substrate. A slow discharge layer is disposed on a first surface of the transfer hand. The slow discharge layer is configured to discharge static electricity charged in the substrate.