A heat treatment apparatus is a heat treatment apparatus managing a dummy wafer. The heat treatment apparatus includes: a heat treatment part performing a heat treatment on the dummy wafer; a damage detection part detecting a damage of the dummy wafer; and a controller determining whether or not the dummy wafer can be used based on damage information detected by the damage detection part.

A semiconductor manufacturing apparatus for processing an object having a first surface and a second surface opposite to the first surface, includes: a first processor having a chuck in a first chamber, the chuck having a chuck surface configured to chuck the object, the chuck surface having protrusions adjacent to each other along one direction of the chuck surface, the protrusions being configured to be pressed against the second surface to form depressions adjacent to each other along one direction on the second surface; and a second processor configured to expose the second surface to a chemical solution in a second chamber to process the depressions into a trench, the trench extending along the one direction on the second surface.

An electrostatic chuck assembly includes a ceramic body having a wafer placement surface that is a circular surface, and an F/R placement surface that is formed around the wafer placement surface and is positioned at a lower level than the wafer placement surface, a wafer attraction electrode embedded inside the ceramic body and positioned in a facing relation to the wafer placement surface, an F/R attraction electrode embedded inside the ceramic body and positioned in a facing relation to the F/R placement surface, a concave-convex region formed in the F/R placement surface to hold gas, a focus ring placed on the F/R placement surface, and a pair of elastic annular sealing members arranged between the F/R placement surface and the focus ring on the inner peripheral side and the outer peripheral side of the F/R placement surface, and surrounding the concave-convex region in a sandwiching relation.

According to one embodiment, a semiconductor manufacturing device according to an embodiment of the present invention includes a chamber; and a stage, wherein the stage comprises: a holding member arranged in the chamber, the holding member having a plurality of convex parts on a surface for mounting a substrate; and a plurality of pins moving up and down in a vertical direction with respect to the holding member, the plurality of lift pins rotating around a rotating shaft parallel to the vertical direction, wherein the plurality of lift pins rotates the substrate around the rotating shaft.

Various embodiments of wafer bonding apparatuses and methods are described herein for reducing distortion in a post-bonded wafer pair. More specifically, the present disclosure provides embodiments of wafer bonding apparatuses and methods to reduce post-bond wafer distortion that occurs primarily within the center and/or the edge of the post-bonded wafer pair. In the present disclosure, post-bonded wafer distortion is reduced by correcting for variations in the pre-bond wafer shapes. Variations in pre-bond wafer shape are corrected, or compensated for, by making hardware modifications to the wafer chuck. Such modifications may include, but are not limited to, modifications to the surface height and/or the temperature of the wafer chuck. Although hardware modifications are disclosed herein for reducing post-bond wafer distortion near the center and/or the edge of the post-bonded wafer pair, similar modifications can be made to reduce post-bond wafer distortion within other areas or zones of the post-bonded wafer pair.

A susceptor used in a deposition reactor provides heat input and controls the build-up of errant deposition. The susceptor heats a substrate tape within the reactor upon which one or more thin films are deposited, particularly high temperature superconductor (HTS) thin films produced in a MOCVD reactor.

A wafer-cleaning apparatus includes an inner pin that supports a wafer. The wafer-cleaning apparatus further includes a nozzle disposed above the inner pin, a light source disposed under the inner pin, a window disposed between the light source and the wafer, and a window protector disposed between the wafer and the window. The nozzle supplies a chemical liquid to the wafer and the inner pin distributes a portion of the chemical liquid on an upper surface of the wafer by rotating the wafer. The window protector receives a portion of the chemical liquid that flows out of the wafer and the light source supplies the light to the wafer through the window protector and the window.

A substrate processing apparatus includes: a process chamber performing film-forming processing to a substrate; a substrate support that is provided in the process chamber and includes a plurality of mounting surfaces on which the substrate is mounted; and a detector that is disposed outside or inside the process chamber and detects a state of a film-forming material adhering to at least one of the plurality of mounting surfaces in a non-contact manner.

A substrate processing apparatus capable of solving a misalignment problem of chamber portions due to thermal deformation or a vacuum force during high-temperature processing includes a first plate; a second plate on the first plate; a position control unit configured to change a relative position of the second plate with respect to the first plate; and a support unit configured to permit movement of the second plate while supporting the second plate.

Improved edge rings with wafer-centering roller mechanisms are disclosed. The roller mechanisms of these apparatuses are equipped with spring-biased rollers that are urged radially inward such that the rollers may move radially inward or outward to compensate for differential temperature expansion between wafers and the edge ring over a large temperature range while still maintaining high placement accuracy at both high and low temperatures.