Proposed is an edge ring for a semiconductor manufacturing process, and specifically, to an edge ring for a semiconductor manufacturing process, which has a denser surface structure by forming a denser boron carbide surface layer on the surface of a sintered body (base layer) formed of boron carbide powder and forming a mixed layer for preventing peeling between the base layer and the surface layer and improving physical properties therebetween, and thus the boron carbide sintered body is prevented from being cracked during a harsh plasma process, and particle generation caused by the cracking is effectively suppressed, and as a result, a defective product rate can be reduced, and a manufacturing method thereof.

A substrate support includes: a conductive base having a flow path through which a fluid for temperature control flows; an electrostatic chuck disposed above the base and having a support surface of the substrate on an upper surface of the electrostatic chuck; and a metal bonding portion configured to mutually bond the base and the electrostatic chuck. The base includes: a main body member having at least one recess configured to define at least a part of a side surface of the flow path and a bottom surface of the flow path; and a heat transfer member configured to define a ceiling surface of the flow path and perform heat transfer between the fluid for temperature control and the electrostatic chuck.

Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.

An electrostatic chuck device containing a substrate, a stack stacked on an upper surface of the substrate in the thickness direction, and a ceramic layer stacked on an upper surface of the stack in the thickness direction. A sleeve formed from an insulating material is inserted into a through-hole that penetrates through the substrate and the stack in the thickness direction. The upper surface of the sleeve in the thickness direction has a two-level structure including a first upper surface positioned on the same plane as an upper surface of the substrate in the thickness direction, and a second upper surface positioned above the first upper surface in the thickness direction of the sleeve and disposed proximate to the ceramic layer. In a plan view, an edge portion of the stack is disposed on top of the first upper surface.

A member for a semiconductor manufacturing apparatus includes a plate, at least one through hole, and an insulating pipe (cylindrical member). The plate is formed of an alumina sintered body, has a front surface serving as a wafer placement surface, and includes therein an electrode. The through hole penetrates through the plate in a thickness direction. The insulating pipe is formed of an alumina sintered body and is joined to a rear surface of the plate with a first joining layer having a ring shape and formed of an alumina sintered body interposed between the insulating pipe and the rear surface of the plate.

A wafer placement table includes a ceramic base having a wafer placement surface on its top surface and incorporating an electrode, a cooling base in which a refrigerant flow channel is formed, and a metal bonding layer that bonds the ceramic base with the cooling base. The cooling base includes a ceiling base made of a metal matrix composite material or a low thermal expansion metal material and defining a ceiling of the refrigerant flow channel, a grooved base of which a main component is made of the same ceramic material as a main component of the ceramic base and on a top surface of which a flow channel groove defining a bottom and a side wall of the refrigerant flow channel is provided, and a metal ceiling bonding layer that bonds a bottom surface of the ceiling base with the top surface of the grooved base.

A wafer placement table is a wafer placement table that includes a refrigerant flow channel through which refrigerant is flowed and includes a top base including a ceramic base incorporating an electrode and having a wafer placement surface on a top surface of the ceramic base, a bottom base on a top surface of which a flow channel groove defining a side wall and a bottom of the refrigerant flow channel is provided, and a seal member disposed between the top base and the bottom base so as to seal the refrigerant flow channel from an outside.

A wafer support table includes a ceramic base and a rod. The ceramic base has a wafer placement surface and includes an RF electrode and a heater electrode that are embedded therein in the mentioned order from the side closer to the wafer placement surface. A hole is formed in the ceramic base to extend from a rear surface toward the RF electrode. The rod is made of Ni or Kovar, is bonded to a tablet exposed at a bottom surface of the hole, and supplies radio-frequency electric power to the RF electrode therethrough. An Au thin film is coated over a region of an outer peripheral surface of the rod ranging from a base end of the rod to a predetermined position.

The invention relates to a lithography system, for example for projecting an image or an image pattern on to a target (1) such as a wafer, said target being included in said system by means of a target table (2), clamping means being present for clamping said target on said table. Said clamping means comprises a layer of stationary liquid (3), included at such thickness between target and target table that, provided the material of the liquid (C) and of the respective contacting faces (A, B) of the target (1) and target table (2), a pressure drop (P.sub.Cap) arises.

According to an aspect of the invention, there is provided a plasma-resistant member including: a base member; and a layer structural component formed at a surface of the base member, the layer structural component including an yttria polycrystalline body and being plasma resistant, the layer structural component including a first uneven structure, and a second uneven structure formed to be superimposed onto the first uneven structure, the second uneven structure having an unevenness finer than an unevenness of the first uneven structure.