A heat shield for a platen of a substrate support includes a body and absorption-reflection-transmission regions. The absorption-reflection-transmission regions are in contact with the body and are configured to at least one of affect or modulate at least a portion of a heat flux pattern between a distal reference surface and the platen. The absorption-reflection-transmission regions include tunable aspects to tune the at least a portion of the heat flux pattern.

According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and a first porous part. The ceramic dielectric substrate has a first major surface and a second major surface on opposite side from the first major surface. The base plate supports the ceramic dielectric substrate and includes a gas feed channel. The first porous part is provided at a position between the base plate and the first major surface of the ceramic dielectric substrate. The position is opposed to the gas feed channel. The first porous part includes a plurality of sparse portions each including a plurality of pores. The plurality of sparse portions are spaced from each other. Each of the plurality of sparse portions extends in a direction inclined by a prescribed angle with respect to a first direction from the base plate to the ceramic dielectric substrate.

An Fan-out packaging system, comprising dedicated frame with associated movable metallic spring feature(s) for incoming known-good-die (KGD), is invented. The movable spring anchor(s) along with the boundaries of the frame locks the KGD in its designated position during EMC implementation and subsequent processes. In this system/approach, the position accuracy of KGDs during the wafer reconstitution process will be mostly dominated by the dicing accuracy. The proposed system is a very low cost approach as it does not need the expensive software/tool set and does not have a low throughput site-to-site lithography correction during exposure after metrology is carried out for every flash field. This system is particularly useful for chiplet consisting of component chips from different technologies and from substrate made of different material. The frames can be further used as part of function component for the packaged system either as electromagnetic shield, or heat dissipation/heat sink, or even RF antenna as well as other passive devices or active components.

An object holder configured to support an object, the object holder including: a core body comprising a plurality of burls having distal ends in a support plane for supporting the object; and an electrostatic sheet between the burls, the electrostatic sheet comprising an electrode sandwiched between dielectric layers, wherein the electrostatic sheet is bonded to the core body by a bonding material having a thickness of at least 100 nm.

A substrate support includes: a baseplate; a top plate disposed above the baseplate and configured to support a substrate during processing of the substrate; and a bonding layer bonding the top plate to the baseplate. The bonding layer includes: multiple studs separating the top plate from the baseplate; and a bonding material disposed in areas laterally surrounding the studs and located between the top plate and the baseplate.

Provided is a dry etching apparatus including: a plasma process chamber; an edge ring which is arranged in the plasma process chamber and on which a wafer is mounted; a shadow ring positioned to be spaced apart by a first vertical distance above the edge ring during a plasma etching process of the wafer; an operation unit coupled to the shadow ring and having a lift pin that raises and lowers the shadow ring; a fixing portion having a plurality of fixing pins engaged with the lift pin at different positions to fix a lowering point of the shadow ring; and a distance control unit that controls the fixing portion to determine the first vertical distance, wherein the first vertical distance is determined by a first horizontal distance between the wafer and the edge ring.

A reaction-bonded silicon carbide (SiC) body is produced by: providing a preform including ceramic elements and carbon, and one or more surface features; providing a powder which includes diamond particles and carbon; locating the powder in the surface feature(s); and infiltrating the preform and the powder with molten silicon (Si) to form reaction-bonded SiC in the preform, and to form reaction-bonded SiC coatings on the diamond particles. The present disclosure also relates to a device/component which includes: a main body portion and discrete elements located at least partially within the main body portion. The main body portion may include reaction-bonded SiC and Si, but not diamond, while the discrete elements include diamond particles, reaction-bonded SiC coatings surrounding the diamond particles, and Si. According to the present disclosure, diamond may be advantageously located only where it is needed.

A Johnsen-Rahbek force type electrostatic chuck including: a metal substrate; an electrode for electrostatic attraction provided on the metal substrate with an insulating layer interposed between the metal substrate and the electrode for electrostatic attraction; and a dielectric layer constituting an electrostatic attraction surface in contact with a workpiece. The dielectric layer includes a ceramic spray coating and a sealing component with which pores of the ceramic spray coating are filled, and the sealing component contains a metal organic salt containing a rare earth element.

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.

A substrate pedestal includes a thermally conductive substrate support including a mesh, a thermally conductive shaft including a plurality of conductive rods therein, each conductive rod having a first end and a second end, and a sensor. The first end of each conductive rod is electrically coupled to the mesh, and the sensor is disposed between the first and second ends of each conductive rod and configured to detect current flow through each conductive rod.