A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material having an upper stem flange that supports the platen, and a backside gas tube made of ceramic material that is located in an interior of the stem. The backside gas tube includes an upper gas tube flange that is located between a lower surface of the platen and an upper surface of the upper stem flange wherein the backside gas tube is in fluid communication with at least one backside gas passage of the platen and the backside gas tube is configured to supply a backside gas to a region below a lower surface of a semiconductor substrate that is to be supported on the upper surface of the platen during processing.

According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and first and second electrode layers. The ceramic dielectric substrate includes first and second major surfaces. The first and second electrode layers are provided inside the ceramic dielectric substrate. The second electrode layer is provided between the first electrode layer and the first major surface. The first electrode layer includes first and second portions. The first portion is positioned more centrally of the ceramic dielectric substrate than is the second portion. The first portion includes first and second surfaces. The second portion includes third and fourth surfaces. The third surface is positioned between the first surface and the second electrode layer. An electrical resistance of the first surface is greater than an average electrical resistance of the first portion.

A substrate fixing device includes: a base plate; and an electrostatic chuck that is fixed to the base plate to adsorb a substrate by electrostatic force. The electrostatic chuck includes: an adsorption layer that is formed of ceramic and that contacts the substrate to adsorb and hold the substrate; a first heating layer that is formed on the adsorption layer and that includes a first electrode; a second heating layer that is formed on the first heating layer and that includes a second electrode; and a via that is provided between the first electrode and the second electrode to electrically connect the first electrode and the second electrode to each other. The via includes a body portion, and an end portion that is connected to the body portion. A diameter of the end portion is larger than that of the body portion.

A body of an electrostatic chuck comprises mesas disposed on a polished surface of the body. Each of the mesas comprises an adhesion layer disposed on the polished surface of the body, a transition layer disposed over the adhesion layer, and a coating layer disposed over the transition layer. The coating layer has a hardness of at least 14 Gpa. The body further comprises a sidewall coating disposed over a sidewall of the body. A method for preparing the body comprises polishing the surface of the body and cleaning the polished surface. The method further comprises depositing the mesas by depositing the adhesion layer on the body, the transition layer over the adhesion layer, and the coating layer over the transition layer. Further, the method includes, polishing the mesas.

Embodiments of the present disclosure generally relate to a substrate support having a two-part surface coating which reduces defect formation and back side metal contamination during substrate processing. A support body includes a body having an upper surface and a two-part coating disposed over the upper surface of the body. The two-part coating includes a first coating layer extending a first radial distance from a center of the body. The first coating layer includes at least one of a metal-containing material or alloy. The two-part coating includes a second coating layer disposed over the first coating layer. The second coating layer extends a second radial distance from the center of the body. The first radial distance is greater than the second radial distance. The second coating layer is non-metal.

Disclosed is a joined ceramic body comprising a first ceramic portion comprising a first ceramic, a second ceramic portion comprising a second ceramic, and a joining layer formed between the first ceramic portion and the second ceramic portion. The joining layer has a bond thickness of from 0.5 to 20 um and comprises silicon dioxide having a total impurity content of 20 ppm and less. A method of making the joined ceramic body and a joining material are also disclosed.

A support glass substrate of the present invention is a support glass substrate for supporting a substrate to be processed, the support glass substrate including lithium aluminosilicate-based glass, having a content of Li.sub.2O of from 0.02 mol % to 25 mol % in a glass composition, and having an average linear thermal expansion coefficient within a temperature range of from 30° C. to 380° C. of 38×10.sup.−7/° C. or more and 160×10.sup.−7/° C. or less.

A ceramic substrate made of a dielectric material including silicon carbide particles, which is used as a forming material, in which the number of the silicon carbide particles per unit area on the surface of the substrate is smaller than the number of the silicon carbide particles per unit area in a cross section of the substrate.

The present invention relates to a micro LED grip body and a system having the same for inspecting a micro LED, the micro LED grip body having a vacuum-suction structure capable of being used for transferring a micro LED, thereby solving problems of micro LED transfer heads that have been proposed in the related art.

A plasma deposition system comprising a wafer platform, a second electrode, a first electrode, a first high voltage pulser, and a second high voltage pulser. In some embodiments, the second electrode may be disposed proximate with the wafer platform. In some embodiments, the second electrode can include a disc shape with a central aperture; a central axis, an aperture diameter, and an outer diameter. In some embodiments, the first electrode may be disposed proximate with the wafer platform and within the central aperture of the second electrode. In some embodiments, the first electrode can include a disc shape, a central axis, and an outer diameter. In some embodiments, the first high voltage pulser can be electrically coupled with the first electrode. In some embodiments, the second high voltage pulser can be electrically coupled with the second electrode.