A substrate carrier for an epitaxy chamber is described that has an elongated base member supporting two substrate supports in an angled relationship and a center substrate support between the two substrate supports. The center substrate support has one or more openings at which a substrate is positioned for processing, enabling both sides of the substrate to be processed concurrently.

A substrate processing apparatus includes a mounting stand installed to rotate about a rotation shaft extending along a rotary shaft of a rotary table and configured to hold a substrate, and a magnetic gear mechanism including a driven gear configured to rotate the mounting stand about the rotation shaft and a driving gear configured to drive the driven gear. The driven gear is connected to the mounting stand via the rotation shaft and installed to rotate in such a direction as to rotate the mounting stand. The driving gear is disposed in a state in which the driving surface faces the driven surface passing through a predetermined position on a movement orbit of the driven gear moving along with the rotation of the rotary table.

A method for calibration including determining a temperature induced offset in a pedestal of a process module under a temperature condition for a process. The method includes delivering a wafer to the pedestal of the process module by a robot, and detecting an entry offset. The method includes rotating the wafer over the pedestal by an angle. The method includes removing the wafer from the pedestal by the robot and measuring an exit offset. The method includes determining a magnitude and direction of the temperature induced offset using the entry offset and exit offset.

A semiconductor device manufacturing method includes: a primary process of supplying a process gas to a substrate having a depression formed therein to form a third layer and filling the depression with the third layer, the substrate including a first layer whose surface is exposed as an upper surface of the substrate and a second layer formed in at least a sidewall of the depression having the sidewall and a floor surface; performing an etching process of etching the third layer to expose the upper surface, and halting the etching of the third layer while remaining the third layer formed within the depression; and performing a secondary process of supplying the process gas to the substrate to form the third layer so that the depression is filled with the third layer with no clearance.

A carrier ring configured to support a substrate during transport to or from a pedestal of a process tool and surrounding the substrate during processing is defined by, an inner annular portion having a first thickness, the inner annular portion defined to be adjacent a substrate support region of the pedestal; a middle annular portion surrounding the inner annular portion, the middle annular portion having a second thickness greater than the first thickness, such that a transition from a top surface of the inner annular portion to a top surface of the middle annular portion defines a first step; an outer annular portion surrounding the middle annular portion, the outer annular portion having a third thickness greater than the second thickness, such that a transition from the top surface of the middle annular portion to a top surface of the outer annular portion defines a second step.

Pedestal assemblies and methods for using said pedestal assemblies, used in processing chambers implemented for processing substrates are disclosed. In one example, the pedestal assembly includes a center column coupled to a lower chamber body of a processing chamber. A pedestal body is coupled to the center column. The pedestal body includes a substrate support surface and an annular step formed around a circumference of the pedestal body and surrounding the substrate support surface. Further included is a first annular ring segment disposed within the annular step. The first annular ring is defined from a conductive material. A second annular ring segment is also disposed within the annular step. The second annular ring is defined from a dielectric material. The first annular ring and the second annular ring fill the annular step around the circumference of the pedestal body. The first and second annular rings provide a fill that surrounds the substrate support and acts to modify an impedance for improving azimuthal uniformity of films deposited over the substrate using the processing chamber.

A holding apparatus for a semiconductor substrate and a conveying apparatus for a semiconductor substrate.

A susceptor is fixed to a rotational driving shaft to be attachable and detachable in a vertical direction, the opening portions are formed to extend through the susceptor in a thickness direction of the susceptor, and a meshing portion which meshes with the substrate holders releasably in a vertical direction so that the substrate holder can rotate according to rotation of the susceptor is provided below the susceptor.

A substrate processing apparatus includes: a mounting stand for mounting a substrate thereon; a support rod for supporting the mounting stand from below; a revolution mechanism provided below the mounting stand and for supporting the support rod to revolve the mounting stand; a heating part provided between the mounting stand and the revolution mechanism as seen in a height direction and for heating a revolution region of the mounting stand; a heat transfer plate provided between the heating part and the revolution region and for radiating a heat generated from the heating part to the revolution region; and a processing gas supply part for supplying a processing gas to the revolution region. Each of the heating part and the heat transfer plate is divided into a center side and an outer side of the processing container via a gap so as to form a movement path of the support rod.

A substrate processing system comprising a polishing part, a pre-cleaning region, and a cleaning part. The polishing part performs a Chemical Mechanical Polishing (CMP) process on a substrate. The pre-cleaning region is prepared in the polishing part and allows pre-cleaning performed on the substrate having undergone the polishing process. The cleaning part cleans the substrate pre-cleaned in the pre-cleaning region.