A method for manufacturing a semiconductor device includes: preparing a processed wafer having a gallium nitride (GaN) wafer and an epitaxial layer on the GaN wafer; forming a device constituent part in a portion of the processes wafer adjacent to a front surface provided by the epitaxial layer; forming a modified layer inside of the processed wafer by applying a laser beam from a back surface side opposite to the front surface side: and dividing the processed wafer at the modified layer. The processed wafer prepared includes a reflective layer for reflecting the laser beam at a position separated from a planned formation position, where the modified layer is to be formed, by a predetermined distance toward the front surface side. The reflective layer contains a layer having a refractive index different from that of a GaN single crystal of an epitaxial layer.

A semiconductor chip includes a chip-constituting substrate having one surface, the other surface opposite to the one surface, and two pairs of opposing side surfaces connecting the one surface and the other surface. The one surface and the other surface are along one of a {0001} c-plane, a {1-100} m-plane, and a {11-20} a-plane. One of the two pairs of opposing side surfaces is along another one of the {0001} c-plane, the {1-100} m-plane, and the {11-20} a-plane. The other of the two pairs of opposing side surfaces is along the other of the {0001} c-plane, the {1-100} m-plane, and the {11-20} a-plane. The side surface includes an altered layer containing gallium oxide and gallium metal in a surface layer portion in a depth direction which is a normal direction to the side surface.

A method for separating a solid body includes: providing a first solid body having opposite first and second surfaces and a crystal lattice, and that is at least partially transparent to a laser beam emitted by a laser; modifying a portion of the crystal lattice by the laser beam, the laser beam penetrating through the first surface, the modified portion of the crystal lattice extending in a plane parallel to the first surface, as a result of the modification, subcritical cracks are formed arranged in a plane parallel to the first surface, a plurality of the subcritical cracks forming a detachment region in the first solid body, the plurality of the subcritical cracks passing at least in some sections through the modified portion of the crystal lattice; and separating the first solid body along the detachment region to form a wafer and a second solid body.

In one embodiment, a method of manufacturing a semiconductor device includes forming a first semiconductor layer including impurity atoms with a first density, on a first substrate, forming a second semiconductor layer including impurity atoms with a second density higher than the first density, on the first semiconductor layer, and forming a porous layer resulting from porosification of at least a portion of the second semiconductor layer. The method further includes forming a first film including a device, on the porous layer, providing a second substrate provided with a second film including a device, and bonding the first and second substrates to sandwich the first and second films. The method further includes separating the first and second substrates from each other such that a first portion of the porous layer remains on the first substrate and a second portion of the porous layer remains on the second substrate.

A method for manufacturing a semiconductor substrate according to the present invention includes preparing a seed substrate containing a semiconductor material, forming an ion implanted layer at a certain depth from a front surface of a main surface of the seed substrate by implanting ions into the seed substrate, growing a semiconductor layer on the main surface of the seed substrate with a vapor-phase synthesis method, and separating a semiconductor substrate including the semiconductor layer and a part of the seed substrate by irradiating the front surface of the main surface of at least any of the semiconductor layer and the seed substrate with light.

Methods and equipment for the removal of semiconductor wafers grown on the top surface of a single crystal silicon substrate covered by a porous silicon separation layer by using IR irradiation of the porous silicon separation layer to initiate release of the semiconductor wafer from the substrate, particularly at edges (and corners) of the top surface of the substrate.

A silicon carbide wafer includes a base wafer that is made of silicon carbide and doped with an n-type impurity, and an epitaxial layer that is arranged on a main surface of the base wafer, made of silicon carbide and doped with an n-type impurity. The base wafer has a thickness t1 and an average impurity concentration n1, and the epitaxial layer has a thickness t2 and an average impurity concentration n2. The base wafer and the epitaxial layer are configured so as to satisfy a mathematical formula 1:

−0.0178<0.012+(t2/t1)×0.057-(n2/n1)×0.029-{(t2/t1)-0.273}×{(n2/n1)-0.685}×0.108<0.0178.  [Formula 1]

A method is provided for fabricating a thin-film semiconductor substrate by forming a porous semiconductor layer conformally on a reusable semiconductor template and then forming a thin-film semiconductor substrate conformally on the porous semiconductor layer. An inner trench having a depth less than the thickness of the thin-film semiconductor substrate is formed on the thin-film semiconductor substrate. An outer trench providing access to the porous semiconductor layer is formed on the thin-film semiconductor substrate and is positioned between the inner trench and the edge of the thin-film semiconductor substrate. The thin-film semiconductor substrate is then released from the reusable semiconductor template.

The present disclosure describes a method that includes forming a first two-dimensional (2D) layer on a first substrate and attaching a second 2D layer to a carrier film. The method also includes bonding the second 2D layer to the first 2D layer to form a heterostack including the first and second 2D layers. The method further includes separating the first 2D layer of the heterostack from the first substrate and attaching the heterostack to a second substrate. The method further includes removing the carrier film from the second 2D layer.

A method to fill the flowable material into the semiconductor assembly module gap regions is described. In an embodiment, multiple semiconductor units are formed on the substrate to create an array module; the array module is attached to a backplane having circuitry to form the semiconductor assembly module in which multiple gap regions are formed inside the semiconductor assembly module and edge gap regions are formed surround an edge of the assembly module; The flowable material is forced inside the gap regions by performing the high acting pressure environment and then cured to be a stable solid to form a robustness structure. A semiconductor convert module is formed by removing the substrate utilizing a substrate removal process. A semiconductor driving module is formed by utilizing a connecting layer on the semiconductor convert module. In one embodiment, a vertical light emitting diode semiconductor driving module is formed to light up the vertical LED array. In another one embodiment, multiple color emissive light emitting diodes semiconductor driving module is formed to display color images. In another embodiment, multiple patterns of semiconductor units having multiple functions semiconductor driving module is formed to provide multiple functions for desire application.