Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.

Described herein are systems and methods of utilizing nanochannels generated in the sacrificial layer of a semiconductor substrate to increase epitaxial lift-off speeds and facilitate reusability of GaAs substrates. The provided systems and methods may utilize unique nanochannel geometries to increase the surface area exposed to the etchant and further decrease etch times.

A method for forming a layer by cycled epitaxy includes at least one sequence of steps each having a first epitaxial deposition forming a first growth layer portion having a first thickness on a first monocrystalline pattern and a second growth layer portion having a second thickness on a second non-monocrystalline pattern, the second thickness being greater than the first thickness, and a second epitaxial deposition forming a first sacrificial layer portion having a third thickness on the first growth layer portion and a second sacrificial layer portion having a fourth thickness on the second growth layer portion. The first and second growth layer portions have an additional element content, greater than the additional element content present in the first and second sacrificial layer portions. The sequence also includes etching the whole of the third and fourth thicknesses and stopping before having consumed the whole of the first thickness.

A semiconductor device of an embodiment is manufactured by forming a first layer by applying a liquid containing silicon oxide particles onto a first substrate, performing a first heat treatment, forming a second layer including a first insulator on the upper surface and the side surfaces of the first layer, forming a third layer including an electronic circuit on the second layer, bonding a second substrate including a semiconductor circuit to the third layer, and separating the first substrate and the second substrate at the first layer.

A method of producing microelectronic components includes forming a functional layer system; applying a laminar carrier to the functional layer system; attaching a workpiece to a workpiece carrier; utilizing incident radiation of a laser beam is focused in a boundary region between a growth substrate and the functional layer system, and a bond between the growth substrate and the functional layer system in the boundary region is weakened or destroyed; separating a functional layer stack from the growth substrate, wherein a vacuum gripper having a sealing zone that circumferentially encloses an inner region is applied to the reverse side of the growth substrate, a negative pressure is generated in the inner region such that separation of the functional layer stack from the growth substrate is initiated in the inner region; and the growth substrate held on the vacuum gripper is removed from the functional layer stack.

There is provided a method for manufacturing a SiC device wafer comprising the steps: a) slicing and polishing a SiC boule to thicker substrates compared to the usual thickness in the prior art, b) creating a device wafer on the substrate, c) removing the device wafer from the remaining substrate, d) adding SiC to the remaining substrate so that the original thickness of the substrate is essentially restored, and repeating steps b)-d). The removal of the device wafer can be made for instance by laser slicing. Advantages include that the SiC material loss is significantly decreased and the boule material used for device wafers is considerably increased, the substrates become more stable especially during high temperature processes, the warp and bow is reduced, the risk of breakage is decreased.

A substrate processing method of processing a processing target substrate having a device formed on a front surface thereof includes preparing, in a first separation substrate on a side with the device and a second separation substrate on a side without the device separated from a device substrate, the second separation substrate; and bonding, by reusing the second separation substrate, the second separation substrate to a processing target substrate. A substrate processing system configured to process the processing target substrate having the device formed on the front surface thereof includes a bonding device configured to bond, in the first separation substrate on the side with the device and the second separation substrate on the side without the device separated from the device substrate, the second separation substrate to the processing target substrate by reusing the second separation substrate.

A method for making a selective-area lift-off thin film comprises depositing a van der Waals (vdW) buffer on a substrate; depositing a thin film material (or device structure) on the van der Waals buffer; depositing an adhesion layer on the thin film material; forming a stressor layer on top of the thin film layer; and bonding a handle layer to the stressor layer. Force may be applied to the layered structure by one or more of rolling, bending, and shearing. The area selected for lift-off may be defined by one of laser cutting and mechanical scribing. The vdW buffer includes one or more of hBN, graphite, and graphene. The handle layer is a one of a polyimide tape, thermal release tape, UV release tape, water- or solvent-soluble tape, Kapton tape, and Scotch tape. The stressor layer is a metal film, e.g. Ni, Cr, Ti.

The present disclosure provides a laser lift-off method for separating substrate and semiconductor-epitaxial structure, which includes: providing at least one semiconductor device, wherein the semiconductor device includes a substrate and at least one semiconductor-epitaxial structure disposed in a stack-up manner; irradiating a laser onto an edge area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the edge area; and pressing against the edge area of the semiconductor device vis a pressing device, then irradiating the laser onto an inner area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the inner area wherein gas is generated during separating the portions of the substrate and the semiconductor-epitaxial structure in the inner area and evacuated from the edge area, to prevent damage of the semiconductor-epitaxial structure during the separating process.

A manufacturing method for a semiconductor chip includes: preparing a GaN wafer; producing a processed wafer by forming an epitaxial film on a surface of the GaN wafer to have chip formation regions adjacent to a first surface of the processed wafer; forming a first surface-side element component of a semiconductor element in each chip formation region; forming a wafer transformation layer along a planar direction of the processed wafer by irradiating an inside of the processed wafer with a laser beam; dividing the processed wafer at the wafer transformation layer into a chip formation wafer and a recycle wafer; extracting a semiconductor chip from the chip formation wafer; and after the preparing the GaN wafer and before the dividing the processed wafer, irradiating an inside of the gallium nitride wafer or the processed wafer with a laser beam to form a mark by deposition of gallium.