Stacked FET devices having independent and shared gate contacts are provided. In one aspect of the invention, a stacked FET device includes: a bottom-level FET(s) having a bottom-level FET gate; a top-level FET(s) having a top-level FET gate, wherein an upper portion of the bottom-level FET gate is adjacent to the top-level FET gate; a dielectric sidewall spacer in between the upper portion of the bottom-level FET gate and the top-level FET gate; and a dielectric gate cap disposed over the bottom and top-level FET gates that includes a different dielectric material from the dielectric sidewall spacer. A device having at least one first stacked FET device and at least one second stacked FET device, and a method of forming a stacked FET device are also provided.

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor over the first oxide; a first insulator over the first conductor; a second insulator over the second conductor; a second oxide provided over the first oxide and being in contact with the side surface of the first conductor and the side surface of the second conductor; a third oxide provided over the second oxide and including regions in contact with the side surface of the first insulator and the side surface of the second insulator; a third insulator over the third oxide; and a third conductor over the third insulator.

A semiconductor device including a first integrated circuit component, a second integrated circuit component, a third integrated circuit component, and a dielectric encapsulation is provided. The second integrated circuit component is stacked on and electrically coupled to the first integrated circuit component, and the third integrated circuit component is stacked on and electrically coupled to the second integrated circuit component. The dielectric encapsulation is disposed on the second integrated circuit component and laterally encapsulating the third integrated circuit component, where outer sidewalls of the dielectric encapsulation are substantially aligned with sidewalls of the first and second integrated circuit components. A manufacturing method of the above-mentioned semiconductor device is also provided.

A method for producing a 3D semiconductor device including: providing a first level including a first single crystal layer; forming peripheral circuitry in and/or on the first level, and includes first single crystal transistors; forming a first metal layer on top of the first level; forming a second metal layer on top of the first metal layer; forming second level disposed on top of the second metal layer; performing a first lithography step; forming a third level on top of the second level; performing a second lithography step; processing steps to form first memory cells within the second level and second memory cells within the third level, where the plurality of first memory cells include at least one second transistor, and the plurality of second memory cells include at least one third transistor; and deposit a gate electrode for second and third transistors simultaneously.

Semiconductor devices and corresponding methods of manufacture are disclosed. The method includes forming vertical channel structures on a substrate. The vertical channel structures are formed within a layer stack of alternating layers of a first metal and a first dielectric. The vertical channel structures are channels of field effect transistors that have a current flow path perpendicular to a surface of the substrate. The vertical channel structures have a dielectric core. The method includes forming openings on the substrate that uncover a region of the layer stack adjacent to the vertical channel structures. The method includes, for each vertical channel structure, forming a corresponding staircase region in the layer stack, and forming metal contacts within each staircase region.

A semiconductor device with reduced power consumption that can perform a product-sum operation is provided. The semiconductor device includes first and second circuits, and the second circuit includes first and second switches, a current/voltage converter circuit, and a first transistor. The first circuit is electrically connected to a first terminal of the second circuit; a first terminal of the first switch is electrically connected to the first terminal of the second circuit; a second terminal of the first switch is electrically connected to an input terminal of the current/voltage converter circuit; an output terminal of the current/voltage converter circuit is electrically connected to a first terminal of the first transistor; a second terminal of the first transistor is electrically connected to a first terminal of the second switch; and a second terminal of the second switch is electrically connected to a second terminal of the second circuit. The first circuit has a function of retaining a plurality of pieces of first data and a function of making a current in an amount responsive to the sum of products of the plurality of pieces of first data and a plurality of pieces of second data flow to the first terminal of the second circuit when the plurality of pieces of second data are input to the first circuit.

The degree of freedom of an abnormality detection target location in a solid-state imaging device in which a plurality of substrates are joined is improved. A semiconductor device includes a connection line and a detection circuit. A plurality of semiconductor substrates are joined in the semiconductor device. Then, in the semiconductor device, the connection line is wired across the plurality of semiconductor substrates. The detection circuit detects the presence or absence of an abnormality in a joint surface of the plurality of semiconductor substrates based on an energization state of the connection line when enable has been set by a predetermined control signal.

This application is directed to integrating a field-effect transistor (FinFET) and a Schottky barrier diode on a substrate. A first fin structure and a second fin structure are formed on the substrate. The first fin structure includes a channel portion extending to two stressor portions on two opposite sides of the channel portion, and the second fin structure includes a junction portion. A source structure and a drain structure of the FinFET are formed on the two stressor portions of the first fin structure, respectively. A source metallic material, a drain metallic material, a first metallic material are formed to electrically couple to the source structure, the drain structure, and the junction portion of the second fin structure, respectively, thereby providing a Schottky junction between the junction portion of the second fin structure and the first metallic material.

A method for producing a 3D memory device, the method including: providing a first level including a first single crystal layer and control circuits; forming at least one second level above the first level; performing a first etch step including etching holes within the second level; forming at least one third level above the at least one second level; performing a second etch step including etching holes within the third level; and performing additional processing steps to form a plurality of first memory cells within the second level and a plurality of second memory cells within the third level, where each of the first memory cells include one first transistor, where each of the second memory cells include one second transistor, where at least one of the first or second transistors has a channel, a source, and a drain having a same doping type.

A method for producing a 3D memory device including: providing a first level including a single crystal layer and control circuits, where the control circuits include a plurality of first transistors; forming at least one second level above the first level; performing a first etch step including etching holes within the second level; performing processing steps to form a plurality of first memory cells within the second level, where each of the first memory cells include one of a plurality of second transistors, where the control circuits include memory peripheral circuits, where at least one first memory cell is at least partially atop a portion of the memory peripheral circuits, and where fabrication processing of the first transistors accounts for a temperature and time associated with processing the second level and the plurality of second transistors by adjusting a process thermal budget of the first level accordingly.