Systems, apparatuses, and methods are described for clamping a heat generating device such as a thyristor in place. The use of spring washers in various configurations is described. A spring washing washer may be used to apply force to a pad which in turn applies the force to a plate above a heat generating device. The plate above the heat generating device may apply downward pressure, which may force the heat generating device against a lower surface. Related systems, apparatuses, and methods are also described.

Reliability of a semiconductor module is improved. In a resin mold step of assembly of a semiconductor module, an IGBT chip, a diode chip, a control chip, a part of each of chip mounting portions are resin molded so that a back surface of each of the chip mounting portions is exposed from a back surface of a sealing body. After the resin molding, an insulating layer is bonded to the back surface of the sealing body so as to cover each back surface (exposed portion) of the chip mounting portions, and then, a TIM layer is bonded to an insulating layer. Here, a region of the TIM layer in a plan view is included in a region of the insulating layer.

In an embodiment, a device includes: a package component including: integrated circuit dies; an encapsulant around the integrated circuit dies; a redistribution structure over the encapsulant and the integrated circuit dies, the redistribution structure being electrically coupled to the integrated circuit dies; sockets over the redistribution structure, the sockets being electrically coupled to the redistribution structure; and a support ring over the redistribution structure and surrounding the sockets, the support ring being disposed along outermost edges of the redistribution structure, the support ring at least partially laterally overlapping the redistribution structure.

A multi-layer thermal interface material including two or more thermal interface materials laminated together, where each of the two or more thermal interface materials comprise different mechanical properties.

A base of a connector defines an accommodation portion for accommodating a card-type device. The base has holding portions with surfaces directed to the accommodation portion. The holding portions hold held portions of terminals 40. Heat conductive members are provided on the surfaces of the holding portions. The heat conductive members are sandwiched between the card-type device and the holding portions when the card-type device is connected to the connector 10. In this way, heat conductive paths, which include the conductive members, are formed between the card-type device and held portions of the terminals 40.

Techniques for processor loading mechanisms are disclosed. In the illustrative embodiment, a heat sink is in contact with a top surface of a processor, applying a downward force on the processor. A load plate is also in contact with the processor, applying a downward force to the processor as well. The combination of the downward force from the load plate and the heat sink keep the processor in good physical contact with pins of the processor socket. The heat sink has enough force applied to the processor to be in good thermal contact with the processor without applying higher stress to the heat sink. The load plate can apply force to the processor without regard to the thermal characteristics of the load plate. Other embodiments are envisioned and described.

Particular embodiments described herein provide for an electronic device that can be configured to enable an active loading mechanism. The electronic device can include a heat source, a heat sink over the heat source, and an active loading mechanism coupled to the heat sink, where the heat sink is thermally decoupled from the heat source when the active loading mechanism is not activated and the heat sink is thermally coupled to the heat source when the active loading mechanism is activated. In an example, the active loading mechanism includes shape memory material and the shape memory material is activated when a temperature of the heat source satisfies a threshold temperature.

Direct-bonded metal substrates of electronic assemblies are disclosed. For example, the direct-bonded metal substrate includes a ceramic substrate and a first conductive layer. The first conductive layer is bonded to a first surface of the ceramic substrate, and the first conductive layer includes a first core and a first encapsulating layer that encapsulates the first core. The first core includes a phase change material having a first melting temperature, the first encapsulating layer includes an encapsulating material having a second melting temperature, and the second temperature is greater than the first melting temperature.

In an embodiment, a device includes: a package component including: integrated circuit dies; an encapsulant around the integrated circuit dies; a redistribution structure over the encapsulant and the integrated circuit dies, the redistribution structure being electrically coupled to the integrated circuit dies; sockets over the redistribution structure, the sockets being electrically coupled to the redistribution structure; and a support ring over the redistribution structure and surrounding the sockets, the support ring being disposed along outermost edges of the redistribution structure, the support ring at least partially laterally overlapping the redistribution structure.

Direct-bonded metal substrates of electronic assemblies are disclosed. For example, the direct-bonded metal substrate includes a ceramic substrate and a first conductive layer. The first conductive layer is bonded to a first surface of the ceramic substrate, and the first conductive layer includes a first core and a first encapsulating layer that encapsulates the first core. The first core includes a phase change material having a first melting temperature, the first encapsulating layer includes an encapsulating material having a second melting temperature, and the second temperature is greater than the first melting temperature.