A semiconductor structure and a method for forming the semiconductor structure are disclosed. The method includes receiving a first integrated circuit component having a seal ring and a fuse structure, wherein the fuse structure is electrically connected to a ground through the seal ring; receiving a second integrated circuit component having an inductor; bonding the second integrated circuit component to the first integrated circuit component; electrically connecting the inductor to the fuse structure, wherein the inductor is electrically connected to the ground through the fuse structure; and blowing the fuse structure after a treatment.

A semiconductor structure includes: a semiconductor substrate; interlayer dielectric layers located above the semiconductor substrate and at least two metal interconnection layers located in the interlayer dielectric layers; a laser fuse located in any metal interconnection layer above the bottom metal interconnection layer and metal islands located in the metal interconnection layers below the laser fuse, the metal islands in different metal interconnection layers being connected through conductive contact holes to form two conductive paths, the laser fuse connecting the two conductive paths in series through the conductive contact holes; and, an alignment mark located in the same metal interconnection layer as the laser fuse, the alignment mark being used as a mark for laser alignment during fusing the laser fuse.

An electronic device, e.g. a trimmable resistor, includes a plurality of fused resistors, each fused resistor including one or more doped resistive regions formed in a semiconductor substrate. The doped resistive regions may be thermistors. Each fused resistor further includes a corresponding one of a plurality of fusible links. A first terminal of each of the fused resistors is connected to a first terminal of the corresponding fusible link. First and second interconnection buses are located over the substrate, with the first interconnection bus connecting to a second terminal of each of the fused resistors, and the second interconnection bus connecting to a second terminal of each of the fusible links. The plurality of fused resistors have resistance values that form an exponential progression.

The present disclosure relates to semiconductor structures and, more particularly, to dual thickness fuse structures and methods of manufacture. The structure includes a continuous wiring structure on a single wiring level and composed of conductive material having a fuse portion and a thicker wiring structure.

Provided is a semiconductor device and corresponding method of fabricating the same. The semiconductor device comprises a plurality of bottom lines. One or more top vias are arranged on top of the plurality of bottom lines. One or more electronic fuses (eFuses) are also arranged on top of the plurality of bottom lines. Each eFuse of the one or more eFuses is a via having a smaller critical dimension that the one or more top vias. A plurality of top lines are arranged on top of the one or more top vias and the one or more eFuses.

A method for treating a region of an optoelectronic device (Pix) further including a substrate adjacent to the region to be treated. The optoelectronic device includes, in the region to be treated, programmable elements configured to be modified when they are exposed to a laser beam. The method includes the exposure of at least one of the programmable elements to the laser beam focused through the substrate.

A parallel redundant system comprises a substrate, a first circuit disposed over the substrate, a first conductor disposed at least partially in a first layer over the substrate and wire routed to the first circuit, a second circuit disposed over the substrate, the second circuit redundant to the first circuit, a second conductor disposed in a second layer over the substrate and electrically connected to the second circuit, the second conductor disposed at least partially over the first conductor, a dielectric layer disposed at least partially between the first layer and the second layer, and a laser weld electrically connecting the first conductor to the second conductor.

A semiconductor structure and a method for forming the semiconductor structure are disclosed. The method includes the following operations. A first integrated circuit component having a fuse structure is received. A second integrated circuit component having an inductor is received. The second integrated circuit component is bonded to the first integrated circuit component. The inductor is electrically connected to the fuse structure, wherein the inductor is electrically connected to a ground through the fuse structure.

A semiconductor structure and a method for forming the semiconductor structure are disclosed. The method includes receiving a first integrated circuit component having a seal ring and a fuse structure, wherein the fuse structure is electrically connected to a ground through the seal ring; receiving a second integrated circuit component having an inductor; bonding the second integrated circuit component to the first integrated circuit component; electrically connecting the inductor to the fuse structure, wherein the inductor is electrically connected to the ground through the fuse structure; and blowing the fuse structure after a treatment.

A method for fusing and filling a semiconductor structure includes: a semiconductor structure body is provided, a plurality of fuse array groups is formed in the semiconductor structure body; at least one of interconnection structures of the fuse array groups is fused to form at least one notch in the semiconductor structure body; a shielding layer is formed on the semiconductor structure body, at least one through hole exposing the at least one notch is formed in the shielding layer; and a sealing material layer is formed in the notch.