An AND or OR logic device has multiple layers of ferromagnetic material separated from each other by non-magnetic layers of electrically conductive material of atomic thickness, sufficient to generate anti-magnetic response in a magnetized layer. The anti-magnetic response in a layer below a layer magnetized with a polarity is summed in a region which is coupled to an output, the output generating at least one of a AND or OR logic function on applied input magnetization.

An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

Semiconductor structures and fabrication methods are provided. An exemplary semiconductor structure includes a semiconductor substrate having a plurality of cell regions. Each of the cell regions includes a device region, a protection region surrounding the device region and an isolation region surrounding the device region and the protection region. The semiconductor structure also includes a device structure on the semiconductor substrate in the device region; a protection ring structure on the semiconductor substrate in the protection region; an isolation structure on the semiconductor substrate in the isolation region; a passivation layer on the protection ring structure, the device structure and the isolation structure; and a trench passing through the passivation layer in the isolation region.

An IC that includes a contiguous standard cell area with a 4×3 e-beam pad that is compatible with advanced manufacturing processes and an associated e-beam testable structure.

An IC that includes a contiguous standard cell area with a 4×3 e-beam pad that is compatible with advanced manufacturing processes and an associated e-beam testable structure.

An IC that includes a contiguous standard cell area with a 4×3 e-beam pad that is compatible with advanced manufacturing processes and an associated e-beam testable structure.

An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.

An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.

A system and method for providing electrical circuit design using cells with metal lines are described herein. According to one embodiment, a method includes instantiating a first parameterized cell (PCELL) into a first region of a row of an electrical circuit design. The first PCELL includes field effect transistor (FET) data representing a FET structure having a horizontal dimension and first metal track data representing a first set of adjustable parallel metal line segments extending along the horizontal dimension of the FET structure. The method also includes instantiating a second PCELL into a second region of the row adjacent to the first region. The second PCELL includes second metal track data representing a second set of adjustable parallel metal line segments. The method further includes connecting the first set of adjustable parallel metal line segments to the second set of adjustable parallel metal line segments and eliminating a connectivity short.