Provided is a multilayer imaging device capable of both securing a wide sensitive region and securing an accumulated amount of charges. An imaging device according to an embodiment comprises a pixel, the pixel including a photoelectric conversion layer (15); a first electrode (11) positioned close to a first surface of the photoelectric conversion layer and electrically connected to the photoelectric conversion layer; a second electrode (16) positioned on a second surface opposite to the first surface of the photoelectric conversion layer; a charge accumulation electrode (12) disposed close to the first surface of the photoelectric conversion layer and spaced apart from the first electrode in a direction parallel to the first surface; and a third electrode (200) disposed at a position to have a portion overlapping a gap between the first electrode and the charge accumulation electrode in a direction perpendicular to the first surface.

A sensor device according to the present disclosure includes: a Peltier element; a sensor element thermally connected to a cooling surface of the Peltier element; and a package substrate that is thermally connected to a heat dissipation surface of the Peltier element and accommodates the Peltier element and the sensor element. In addition, the package substrate has a heat dissipation member, made of a material having a higher thermal conductivity than a material of the package substrate, on at least a part of a surface facing the heat dissipation surface of the Peltier element.

A multiplying image sensor includes a semiconductor layer having a first surface and a second surface and a wiring layer provided on the second surface. The semiconductor layer includes a plurality of pixels arranged along the first surface. Each of the plurality of pixels includes a first semiconductor region, a second semiconductor region formed on the second surface side with respect to at least a part of the first semiconductor region and divided for each of the plurality of pixels, and a well region formed in the second semiconductor region so as to be separated from the first semiconductor region and forming a part of a pixel circuit. At least a part of the first semiconductor region and at least a part of the second semiconductor region form an avalanche multiplication region.

A signal processing device according to the present technology includes a multistage-branching-wired-line unit that supplies the same signal to a plurality of target elements via multistage-branched wired lines, and a logic circuit arranged at each of stages of the multistage-branching-wired-line unit, in which the wired lines in at least a certain space between the stages in the multistage-branching-wired-line unit cross each other.

An image sensor includes a first chip structure, a second chip structure disposed on the first chip structure, and in which pixels which each include a photoelectric conversion element are defined, and a light-transmissive cover bonded to an edge region of the second chip structure by an adhesive layer and having a recess portion covering a region in which the pixels are accommodated, wherein the second chip structure includes a substrate having a first surface and a second surface opposite to each other, color filters disposed on the second surface of the substrate to correspond to the pixels, a cover insulating layer covering the color filters, and accommodated in the recess portion and disposed to be horizontally spaced apart from an outer boundary of the recess portion, and microlenses disposed on the cover insulating layer to correspond to the pixels, respectively. An upper surface of the cover insulating layer is at a higher vertical level than the second surface of the substrate, and has a step difference of 3 μm to 15 μm with respect to the upper surface of the substrate.

An image sensing device may include a photoelectric conversion region structured to convert incident light into photocharge, a first transmission gate structured to transfer the photocharge generated by the photoelectric conversion region to a first floating diffusion region structured to store the photocharge, and a second transmission gate structured to transfer the photocharge transferred to the first floating diffusion region to a second floating diffusion region structured to store the photocharge for readout, wherein a first side surface of the second transmission gate abuts on a side surface of the first transmission gate, the first floating diffusion region abuts on a bottom surface of the second transmission gate and the side surface of the first transmission gate, and the second floating diffusion region abuts on a second side surface of the second transmission gate facing away from the first side surface of the second transmission gate.

The present disclosure relates to a photodiode device, which overcomes the drawbacks of conventional devices like increased dark currents. The photodiode device includes a semiconductor substrate, at least one doped well of a first type of electric conductivity at a main surface of the substrate and at least one doped region of a second type of electric conductivity being adjacent to the doped well. The at least one doped well and the at least one doped region are electrically contactable. On a portion of an upper surface of the doped well a protection structure is arranged. The protection structure protects the upper surface of the underlying doped well from an etching process for removing a spacer layer.

A solid-state imaging element according to the present disclosure includes a first light receiving pixel, a second light receiving pixel, and a metal layer. The first light receiving pixel receives visible light. The second light receiving pixel receives infrared light. The metal layer is provided to face at least one of a photoelectric conversion unit of the first light receiving pixel and a photoelectric conversion unit of the second light receiving pixel on an opposite side of a light incident side, and contains tungsten as a main component.

An image sensor for electronic cameras has a plurality of pixels for generating exposure-dependent signals, wherein a respective pixel at least comprises: a light-sensitive element to generate electrical charge from incident light; a readout node; a transfer gate to selectively couple the light-sensitive element to the readout node; a converter transistor to convert the charge present at the readout node into a voltage signal at a signal output; and a selection switch that is connected to the signal output of the converter transistor to selectively couple the signal output of the converter transistor to an associated readout line of the image sensor. The respective pixel has an electrically conductive shielding structure that at least partly surrounds the readout node and that is set or can be set to an electrical potential that depends on the voltage signal of the converter transistor.

An imaging device includes a photodetector and an optical filter disposed on a light-receiving surface of the photodetector. The optical filter may include a diffraction grating, a core layer, and a reflector disposed on first and second opposing sides of the core layer. In some cases, the optical filter (e.g., a GMR filter) uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane. The reflector may reflect electromagnetic waves between adjacent optical filters. The present technology can be applied to, for example, an image sensor provided with a GMR filter, such as a back-side-illuminated or front-side-illuminated CMOS image sensor.