An image pickup apparatus that enables to quickly capture an image from which a predetermined reflected light component is removed with desired sensitivity. A polarizing filter two-dimensionally arranges a plurality of sets each of which includes polarizing filter elements having different polarization directions. A first image sensor has pixels that respectively correspond to polarizing filter elements of the polarizing filter. A polarization calculation unit detects a polarized component of light that enters into a region in which one set of polarizing filter elements are arranged based on signals output from pixels in the region of the first image sensor for each region. A correction unit corrects a pixel signal output from a pixel of a second image sensor corresponding to the region based on a calculation result by the polarization calculation unit for each pixel of the second image sensor.

[Object] A solid-state imaging apparatus that can suppress degradation of image quality caused by a groove between lenses is provided, and a method for manufacturing the solid-state imaging apparatus is also provided.

[Solving Means]

A solid-state imaging apparatus according to the present disclosure includes multiple photoelectric conversion sections, and multiple lenses provided above the multiple photoelectric conversion sections. The multiple lenses each include a groove provided between the lenses, and the groove includes a bottom surface shaped to protrude downward.

An imaging device includes: a semiconductor substrate; a plurality of pixel electrodes located above the semiconductor substrate and each electrically connected to the semiconductor substrate; a counter electrode located above the plurality of pixel electrodes; a first photoelectric conversion layer located between the counter electrode and the plurality of pixel electrodes; and at least one first light-shielding body located in the first photoelectric conversion layer or above the first photoelectric conversion layer. The first photoelectric conversion layer contains semiconductor quantum dots that absorb light in a first wavelength range and a coating material that covers the semiconductor quantum dots, the coating material absorbing light in a second wavelength range, the coating material emitting fluorescence in a third wavelength range. The at least one first light-shielding body absorbs or reflects light with a wavelength in at least part of the second wavelength range.

A resin composition includes: a compound represented by Formula (1); and a resin, in the formula, A and B each independently represent an aromatic hydrocarbon ring or an aromatic heterocycle, Ra and Rb each independently represent a substituent, m1 represents an integer of 0 to mA, m2 represents an integer of 0 to mB, Y.sup.1 and Y.sup.2 each independently represent an alkyl group, an aryl group, a group represented by Formula (Y-1), or a group represented by Formula (Y-2), and at least one of Y.sup.1 or Y.sup.2 represents a group represented by Formula (Y-1) or a group represented by Formula (Y-2). ##STR00001##

A photosensitive device includes a first photosensitive unit, a first collimator layer, a first lens, and a first dummy lens. The first photosensitive unit includes a first photosensitive component and a first control circuit. The first control circuit is electrically connected to the first photosensitive component. The first collimator layer is located above the first photosensitive component and has a first pinhole and a first dummy pinhole. The first lens is located above the first collimator layer and overlapping with the first photosensitive component and the first pinhole in a first direction. The first dummy lens is located above the first collimator layer and overlapping with the first dummy pinhole in the first direction.

One or more systems and/or methods are disclosed for building a relief print generator with no bezel. An electrode layer having more than one electrode can be used in an electrode-based, electro-luminescence component of the relief print generator. The respective electrodes may be connected to power sources with different voltage phases. An electrical circuit can be created between a biometric object and more than one electrode in the electrode layer when the biometric object contacts a surface of the generator. The electro-luminescent component can be activated by electrical charge and emit light indicative of a relief print of the biometric object. A contact electrode outside the electrode layer may not be used, which may allow for the removal of a bezel from an example device.

A direct-bond hybridization (DBH) method is provided to assemble a sensor wafer device. The DBH method includes fabricating an optical element on a handle wafer and depositing first oxide with n-x thickness on the optical element where n is an expected final oxide thickness of the sensor wafer, depositing second oxide with x thickness onto a sensor wafer, executing layer transfer of the optical element by a DBH fusion bond technique to the sensor wafer whereby the first and second oxides form an oxide layer of n thickness between the optical element and the sensor wafer and removing the handle wafer.

A solid-state imaging element according to the present disclosure includes a first light receiving pixel, a second light receiving pixel, and a metal layer. The first light receiving pixel receives visible light. The second light receiving pixel receives infrared light. The metal layer is provided to face at least one of a photoelectric conversion unit of the first light receiving pixel and a photoelectric conversion unit of the second light receiving pixel on an opposite side of a light incident side, and contains tungsten as a main component.

A semiconductor device includes a first dielectric structure, a second dielectric structure, a first substrate between the first dielectric structure and the second dielectric structure, a passivation structure over the second dielectric structure, a first metallic structure over the first dielectric structure, a second metallic structure over the passivation structure, and a third metallic structure in the first and second dielectric structures, the first substrate, and the passivation structure. The second dielectric structure is between the passivation structure and the first substrate. The first metallic structure is electrically connected to the second metallic structure through the third metallic structure, the third metallic structure includes a first portion in the first dielectric structure and the first substrate, a second portion in the second dielectric structure and a third portion in the passivation structure. Widths of the first portion, the second portion and the third portion are different from each other.

An image pickup device having a pixel region in which pixels are arranged, and in which a multilayer wiring structure is disposed. Each pixel includes a photoelectric conversion unit, a charge accumulation unit, a floating diffusion, a light shielding portion covering the charge accumulation unit and opening above the photoelectric conversion unit, and a waveguide which overlaps at least partially a portion at which the light shielding portion opens in a plan view. The device includes an insulating film disposed below the optical waveguide. The insulating film has a refractive index higher than that of an interlayer insulating film. The insulating film is disposed closer to the photoelectric conversion unit than to the lowermost wiring layer among wiring layers of the multilayer wiring structure. The insulating film extends to a portion above the light shielding portion. The insulating film is wider than a lower portion of the optical waveguide.