The disclosure provides an image sensor integrated chip and a method for forming the same. The image sensor integrated chip includes a substrate, an isolation structure, an image sensing element, a gate structure, a first dielectric layer, and a reflective layer. The substrate includes a pixel region. The isolation structure is disposed in the substrate and is configured at opposite sides of the pixel region. The image sensing element is disposed in the pixel region of the substrate. The gate structure is disposed on the pixel region of the substrate. The first dielectric layer is disposed above the pixel region of the substrate and covers sidewalls and a portion of a top surface of the gate structure. The reflective layer is disposed on the first dielectric layer. The reflective layer overlaps with the image sensing element and the portion of the top surface of the gate structure in a first direction perpendicular to a surface of the substrate.

Each thin film transistor of an active matrix substrate includes an oxide semiconductor layer, a gate electrode disposed closer to the substrate side of the oxide semiconductor layer, a gate insulating layer, a source electrode, and a drain electrode, wherein the oxide semiconductor layer includes a layered structure including a first layer and a second layer disposed on a part of the first layer and extending across the first layer in a channel width direction when viewed in a normal direction of the substrate, the first layer includes an overlapping portion overlapping with the second layer, and a first portion and a second portion each located on a corresponding one of both sides of the second layer, when viewed in a normal direction of the substrate, the second layer covers an upper surface and a side surface of the overlapping portion of the first layer, the source electrode is electrically connected to at least a part of an upper surface of the first portion, and the drain electrode is electrically connected to at least a part of an upper surface of the second portion.

A pixel portion includes photodiodes formed on a semiconductor substrate as photoelectric conversion portions, and includes: a high absorption layer (HA layer) for controlling a reflection component of incident light on one surface side of the photodiodes (photoelectric conversion portions), and re-diffusing the incident light in the photoelectric conversion portions, on one surface side of the photodiodes upon which light is incident; and a diffused light suppression structure for suppressing diffused light (caused by light scattering) in a light incident path toward one surface side of the photoelectric conversion portions including the high absorption layer. Due to this, a solid-state imaging apparatus capable of reducing crosstalk between pixels, achieving miniaturization of pixel size, reducing color mixing, and achieving high sensitivity and high performance can be realized.

The present disclosure relates to an image sensor comprising a first layer of photoelectric material and a diffraction grating located between said first layer and the face of the sensor configured to receive light rays.

A camera module includes an imaging lens assembly module and an image sensor. The image sensor is disposed on an image surface of the imaging lens assembly module and includes a photoelectric converting layer, a micro lens arrays layer, a light filtering layer and an anti-reflecting layer. The photoelectric converting layer is for converting a light signal to an electric signal. The micro lens arrays layer is for converging an energy of the imaging light into the photoelectric converting layer. The light filtering layer is for absorbing a light at a certain wavelength region of the imaging light. The anti-reflecting layer is disposed on a surface of at least one of the light filtering layer and the micro lens arrays layer and includes an irregular nano-crystallite structure layer and an optical connecting layer. The optical connecting layer is connected to the irregular nano-crystallite structure layer.

A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.

An image sensor includes a plurality of pixels configured to receive an optical signal incident through a first lens portion; a planarization layer that has a same refractive index as a refractive index of the first lens portion; a second lens portion that is configured to classify the optical signal incident through the first lens portion according to an incidence angle, and is configured to deliver the optical signal to each of the plurality of pixels; and image processing circuitry configured to generate a subject image by combining one or more subimages obtained from the optical signal, wherein the planarization layer is arranged between the second lens portion and the plurality of pixels.

The image sensor structure includes a substrate, a readout circuit array, a photoelectric layer and a filter layer. The filter layer has a first spectrum defining a. first wavelength, The photoelectric layer has a second spectrum defining a second wavelength, The second wavelength is longer than the first wavelength. The first wavelength corresponds to a first line passing through a first point and a second point on a curve of the first spectrum of the filter layer. The first point aligns with an extinction coefficient of 0.9. The second point aligns with an extinction coefficient of 0.1. The second wavelength corresponds to a second line passing through a third. point and a fourth point on a curve of the second spectrum of the photoelectric layer. The third point aligns with an extinction coefficient of 0.9. The fourth point aligns with an extinction coefficient of 0.1.

A manufacturing method of an image sensor including the following steps is provided. A substrate is provided. A light sensing device is formed in the substrate. A storage node is formed in the substrate. The storage node and the light sensing device are separated from each other. A buried gate structure is formed in the substrate. The buried gate structure includes a buried gate and a first dielectric layer. The buried gate is disposed in the substrate and covers at least a portion of the storage node. The first dielectric layer is disposed between the buried gate and the substrate. A first light shielding layer is formed on the buried gate. The first light shielding layer is located above the storage node and electrically connected to the buried gate.

A pixel cell includes a plurality of subpixels to generate image charge in response to incident light. The subpixels include an inner subpixel laterally surrounded by outer subpixels. A first plurality of transfer gates disposed proximate to the inner subpixel and a first grouping of outer subpixels. A first floating diffusion is coupled to receive the image charge from the first grouping of outer subpixels through a first plurality of transfer gates. A second plurality of transfer gates disposed proximate to the inner subpixel and the second grouping of outer subpixels. A second floating diffusion disposed in the semiconductor material and coupled to receive the image charge from each one of the second grouping of outer subpixels through the second plurality of transfer gates. The image charge in the inner subpixel is received by the first, second, or both floating diffusions through respective transfer gates.