A photoelectric conversion device includes a waveguide member disposed above a photoelectric conversion unit, and an insulating member disposed above a substrate, and surrounding at least part of the waveguide member. The waveguide member has a first side face, a second side face, and a third side face, arranged in that order from the substrate. An angle of inclination of the first side face is smaller than an angle of inclination of the second side face. An angle of inclination of the third side face is smaller than the angle of inclination of the second side face. The angle of inclination of the second side face is smaller than 90 degrees.

An array imaging module includes a molded photosensitive assembly which includes a supporting member, at least a circuit board, at least two photosensitive units, at least two lead wires, and a mold sealer. The photosensitive units are coupled at the chip coupling area of the circuit board. The lead wires are electrically connected the photosensitive units at the chip coupling area of the circuit board. The mold sealer includes a main mold body and has two optical windows. When the main mold body is formed, the lead wires, the circuit board and the photosensitive units are sealed and molded by the main mold body of the mold sealer, such that after the main mold body is formed, the main mold body and at least a portion of the circuit board are integrally formed together at a position that the photosensitive units are aligned with the optical windows respectively.

An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or an active region and a second structure including an oxide semiconductor in an active layer are fabricated. After that, the first and second structures are bonded to each other so that metal layers included in the first and second structures are bonded to each other; thus, an imaging device having a three-dimensional integration structure is formed.

A plurality of subpixels is included in one pixel. An imaging device includes a subpixel, a pixel, and a pixel array. The subpixel includes a photoelectric conversion element that receives light incident at a predetermined angle and outputs an analog signal on the basis of intensity of the received light. The pixel includes a plurality of the subpixels, a lens that condenses light incident from an outside on the subpixel, and a photoelectric conversion element isolation portion that does not propagate information regarding intensity of the light acquired in the photoelectric conversion element to the adjacent photoelectric conversion element, and further includes a light-shielding wall that shields light incident on the lens of another pixel. The pixel array includes a plurality of the pixels.

The present disclosure describes a throughput-scalable image sensing system for analyzing biological or chemical samples is provided. The system includes a plurality of image sensors configured to detect at least a portion of light emitted as a result of analyzing the biological or chemical samples. The plurality of image sensors is arranged on a plurality of wafer-level packaged semiconductor dies of a single semiconductor wafer. Each image sensor of the plurality of image sensors is disposed on a separate packaged semiconductor die of the plurality of packaged semiconductor dies. Neighboring packaged semiconductor dies are separated by a dicing street; and the plurality of packaged semiconductor dies and a plurality of dicing streets are arranged such that the plurality of packaged semiconductor dies can be diced from the single semiconductor wafer as a group.

A light detecting device is provided with: a filter array including filters arranged two-dimensionally, each of the filters having a light-incident surface and a light-emitting surface, the filters including multiple types of filters having mutually different transmission spectra; and an image sensor having a light-detecting surface facing the light-emitting surface, the image sensor being provided with light-detecting elements arranged two-dimensionally on the light-detecting surface, wherein the distance between the light-emitting surface and the light-detecting surface is different for each of the filters.

An imaging element package according to the present disclosure includes a circuit board, an imaging element substrate, and a light-transmissive substrate. The imaging element substrate is stacked on the circuit board. The light-transmissive substrate is stacked on the imaging element substrate via a void by an adhesive member provided on the peripheral edge of the light receiving surface of the imaging element substrate, and has higher heat resistance than the imaging element substrate. The imaging element package further includes a frame-shaped frame body stacked on the circuit board. The imaging element substrate and the light-transmissive substrate are housed in a region surrounded by the frame body.

Disclosed is an image sensor including a sensor substrate including a plurality of light sensing cells; a transparent spacer layer provided over the sensor substrate; and a color separation lens array provided over the spacer layer and including a plurality of nano-posts configured to change a phase of incident light according to an incident location, wherein the plurality of nano-posts are arranged in a plurality of layers, wherein, from among the plurality of nano-posts, nano-posts having widths less than wc may be arranged only in any one layer of the plurality of layers. Also, wc may be greater than or equal to 80 nm and less than or equal to 200 nm. Therefore, the minimum width of the nano-posts provided in the color separation lens array may be increased, which is advantageous for a manufacturing process.

Provided is an imaging device capable of efficiently dissipating heat from an imaging element. An imaging device 100 includes: an imaging element substrate 4 on which an insulating layer 51 and a conductor layer 52 are stacked and an imaging element 41 is mounted; and a housing 1 that accommodates the imaging element substrate 4. The surface of the imaging element substrate 4 has a mounting region 45 on which an electronic component 43 including the imaging element 41 is mounted, a covered region 46 in which the conductor layer 52 is covered with the insulating layer 51, and an exposed region 47 in which the conductor layer 52 is exposed from the insulating layer 51, and the exposed region 47 is connected to the housing 1.

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.