A radiation-resistant image sensor package may include: a substrate; an image sensor disposed over the substrate; and an optical cover disposed over the image sensor, wherein a radiation-resistant passivation layer is coupled to the optical cover.

A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.

A device is disclosed. The device includes a plurality of pixels disposed over a first surface of a semiconductor layer. The device includes a device layer disposed over the first surface. The device includes metallization layers disposed over the device layer. One of the metallization layers, closer to the first surface than any of other ones of the metallization layers, includes at least one conductive structure. The device includes an oxide layer disposed over a second surface of the semiconductor layer, the second surface being opposite to the first surface, the oxide layer also lining a recess that extends through the semiconductor layer. The device includes a spacer layer disposed between inner sidewalls of the recess and the oxide layer. The device includes a pad structure extending through the oxide layer and the device layer to be in physical contact with the at least one conductive structure.

Process to release Silicon stress in forming CMOS image sensor. In one embodiment, a method for manufacturing an image sensor includes providing a first wafer that is a semiconductor substrate, where the first wafer has a first side and a second side opposite from the first side. The method also includes attaching a second wafer to the second side of the first wafer. The method further includes forming isolation structures in the second wafer by etching. The isolation structures are bounded by the second side of the first wafer. The method also includes growing an epitaxial layer between individual isolation structures.

Provided is an imaging unit that includes two or more imaging devices that are different from each other in imaging direction, and a substrate formed with each of the imaging devices. The substrate has a coupler formed between the imaging devices. The imaging unit including the plurality of imaging devices is able to yield a high-quality image when capturing an image of a wide range.

The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a plurality of pixel regions disposed within a substrate and respectively comprising a photodiode configured to receive radiation that enters the substrate from a back-side. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions surrounding the photodiode. The BDTI structure extends from the back-side of the substrate to a first depth within the substrate. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel regions overlying the photodiode. The MDTI structure extends from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure is a continuous integral unit having a ring shape.

A semiconductor device has a substrate. A semiconductor die with a photosensitive circuit is disposed over the substrate. A lens comprising a protective layer is disposed over the photosensitive circuit. An encapsulant is deposited over the substrate, semiconductor die, and lens. The protective layer is removed after depositing the encapsulant.

An image pickup apparatus includes an image pickup member including an image pickup device, a stacked device in which a plurality of semiconductor devices are stacked, a wiring board having a first principal surface and a second principal surface, the wiring board including a central section having a substrate thicker than the image pickup device, an intermediate section that is extended from the central section and is bent, and a terminal section that is extended from the intermediate section, the image pickup member being bonded to the first principal surface of the central section, the stacked device being bonded to the second principal surface of the central section, and a plurality of signal cables bonded to the terminal section.

A pixel includes a semiconductor substrate that includes a floating diffusion region and a photodiode region. The pixel also includes, between a front surface of the semiconductor substrate and a back surface opposing the front surface: a first trench and a second trench adjacent to the first trench in a separation direction that is both (a) parallel to the front surface and (b) in a plane that is perpendicular to the front surface. Each of the first and second trench (a) is between the floating diffusion region and the photodiode region and (b) extends into the semiconductor substrate from the front surface. In the separation direction, a top average-separation between the first and second trench, at depths between the front surface and a first depth in the semiconductor substrate, exceeds a bottom average-separation between the first and second trench, at depths exceeding the first depth.

An imaging element according to the present disclosure is an imaging element flip-chip mounted on a wiring substrate, in which a projection is provided on a side surface of the imaging element such that a bottom surface side of the imaging element projects from a top surface side. Then, in the imaging device according to the present disclosure, the imaging device is flip-chip mounted on the wiring substrate so that a top surface of the imaging element faces the wiring substrate, and an outer periphery of the imaging element on the wiring substrate is sealed with a sealing material. An adhesion site of the sealing material is urged to a side of the projection, so that penetration of a solute and a solvent forming the sealing material may be reduced.