A multiplying image sensor includes a semiconductor layer having a first surface and a second surface and a wiring layer provided on the second surface. The semiconductor layer includes a plurality of pixels arranged along the first surface. Each of the plurality of pixels includes a first semiconductor region, a second semiconductor region formed on the second surface side with respect to at least a part of the first semiconductor region and divided for each of the plurality of pixels, and a well region formed in the second semiconductor region so as to be separated from the first semiconductor region and forming a part of a pixel circuit. At least a part of the first semiconductor region and at least a part of the second semiconductor region form an avalanche multiplication region.

A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.

An imaging apparatus including: a first imaging element and a second imaging element, in which each of the first and second imaging elements includes: a plurality of pixels in a semiconductor substrate; a pixel separation wall; and a color filter above a light receiving surface of the semiconductor substrate that transmits light having a wavelength that is different between the first imaging element and the second imaging element, the pixel separation wall included in the first imaging element has a slit at a center of the first imaging element where the imaging apparatus is viewed from a side of the light receiving surface, and the pixel separation wall included in the second imaging element does not have a slit at a center of the second imaging element where the imaging apparatus is viewed from a side of the light receiving surface.

A solid-state imaging element according to the present disclosure includes a first light receiving pixel, a second light receiving pixel, and a metal layer. The first light receiving pixel receives visible light. The second light receiving pixel receives infrared light. The metal layer is provided to face at least one of a photoelectric conversion unit of the first light receiving pixel and a photoelectric conversion unit of the second light receiving pixel on an opposite side of a light incident side, and contains tungsten as a main component.

Provided are a first photoelectric conversion unit, a second photoelectric conversion unit having a smaller electric charge amount to be converted per unit time than the first photoelectric conversion unit, a charge accumulation unit that accumulates an electric charge generated by the second photoelectric conversion unit, a charge voltage conversion unit, a first transfer gate unit that transfers an electric charge from the first photoelectric conversion unit to the charge voltage conversion unit, a second transfer gate unit that couples potentials of the charge voltage conversion unit and the charge accumulation unit, a third transfer gate unit that transfers an electric charge from the second photoelectric conversion unit to the charge accumulation unit, an overflow path formed under a gate electrode of the third transfer gate unit and transfers an electric charge overflowing from the second photoelectric conversion unit to the charge accumulation unit, and a light reducing unit that reduces light to enter the second photoelectric conversion unit.

A backside-illuminated image sensor and a method of manufacturing the same are disclosed. The backside-illuminated image sensor is capable of improving sensitivity by including a scattering layer in a substrate that may result in incident light having a path greater than the thickness of the substrate and, simultaneously, of additionally enhancing light sensitivity with respect to a specific wavelength or wavelength band of light passing through one of a plurality of different color filters by a varying depth or thickness of the scattering layer for each unit pixel in the image sensor.

The present technology relates to an electromagnetic wave processing device that enables reduction of color mixture. Provided are a photoelectric conversion element formed in a silicon substrate, a narrow band filter stacked on a light incident surface side of the photoelectric conversion element and configured to transmit an electromagnetic wave having a desired wavelength, and interlayer films respectively formed above and below the narrow band filter, and the photoelectric conversion element is formed at a depth from an interface of the silicon substrate, the depth where a transmission wavelength of the narrow band filter is most absorbed. The depth of the photoelectric conversion element from the silicon substrate becomes deeper as the transmission wavelength of the narrow band filter is longer. The present technology can be applied to an imaging element or a sensor using a plasmon filter or a Fabry-Perot interferometer.

A light detection device includes: a back-illuminated light receiving element; a circuit element; a connection member; an underfill; and a light shielding mask. The light shielding mask includes a frame having an opening and a light shielding layer formed on an inner surface of the opening. A first opening edge on the side of the circuit element in the opening is located at the outside of an outer edge of the light receiving element. A second opening edge opposite to the circuit element in the opening is located at the inside of the outer edge of the light receiving element. The opening is narrowed from the first opening edge toward the second opening edge. A width of the frame increases from the first opening edge toward the second opening edge. The underfill reaches a gap between the light receiving element and the light shielding layer.

A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1×10.sup.15 cm.sup.−3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.

A first circuit constituting a plurality of first circuit in a first direction, which stores a signal output from a pixel having a photoelectric conversion unit; a first control unit to which the plurality of first circuits are connected and outputs a first signal for outputting signals stored in the plurality of first circuits; a readout unit that reads out the signal output from the first circuit; a plurality of second circuits that are connected to the first control unit, a plurality of sets of the plurality of second circuits in the first direction; and a second control unit that controls a readout of the signal by the readout unit. The first control unit outputs a second signal to the plurality of second circuits together with the first signal; and the second control unit controls the readout of the signal by the readout unit, based on the second signal.