There is provided a solid-state imaging device that includes a photoelectric conversion unit, a transfer gate, a floating diffusion unit, and a transistor. The photoelectric conversion unit produces a charge according to incident light. The transfer gate has a columnar shape having an opening that is continuous in a vertical direction, and transfers the charge from the photoelectric conversion unit. The floating diffusion unit is formed extending to a region surrounded by the opening of the transfer gate, and converts the transferred charge into a voltage signal. The transistor is electrically connected to the floating diffusion unit via a diffusion layer.

In some examples, a sensor apparatus comprises: an array of pixel cells each including one or more photodiodes configured to generate a charge in response to light, and a charge storage device to convert the charge to output a voltage of an array of voltages, one or more an analog-to-digital converter (ADC) configured the convert the array of voltages to first pixel data, and an on-sensor controller configured to input the first pixel data into a machine-learning model to generate output data comprising prediction data associated with one or more features of the first pixel data, generate, based on the prediction data, second pixel data, the second pixel data associated with one or more transformed features of the first pixel data, and send, from the sensor apparatus to a separate receiving apparatus, the second pixel data.

Provided is a multilayer imaging device capable of both securing a wide sensitive region and securing an accumulated amount of charges. An imaging device according to an embodiment comprises a pixel, the pixel including a photoelectric conversion layer (15); a first electrode (11) positioned close to a first surface of the photoelectric conversion layer and electrically connected to the photoelectric conversion layer; a second electrode (16) positioned on a second surface opposite to the first surface of the photoelectric conversion layer; a charge accumulation electrode (12) disposed close to the first surface of the photoelectric conversion layer and spaced apart from the first electrode in a direction parallel to the first surface; and a third electrode (200) disposed at a position to have a portion overlapping a gap between the first electrode and the charge accumulation electrode in a direction perpendicular to the first surface.

A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.

An image sensor includes a dual vertical gate. The dual vertical gate includes two vertical extension portions that are spaced apart from each other in a first direction and vertically extend in a second direction perpendicular to the first direction into a substrate, and a connection portion that connects the two vertical extension portions to each other. An element isolation layer is disposed adjacent to a side surface of the vertical extension portion in the first direction. The two vertical extension portions are separated by a separation area that extends in the second direction, and a top surface of the separation area is lower than a top surface of the element isolation layer.

Aspects of the present disclosure relate to depth sensing using a device. An example device includes a light projector configured to project light in a first and a second distribution. The first and the second distribution include a flood projection when the device operates in a first mode and a pattern projection when the device operates in a second mode, respectively. The example device includes a receiver configured to detect reflections of light projected by the light projector. The example device includes a processor connected to a memory storing instructions. The processor is configured to determine first depth information based on reflections detected by the receiver when the device operates in the first mode, determine second depth information based on reflections detected by the receiver when the device operates in the second mode, and resolve multipath interference (MPI) using the first depth information and the second depth information.

An imaging device includes a photodetector and an optical filter disposed on a light-receiving surface of the photodetector. The optical filter may include a diffraction grating, a core layer, and a reflector disposed on first and second opposing sides of the core layer. In some cases, the optical filter (e.g., a GMR filter) uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane. The reflector may reflect electromagnetic waves between adjacent optical filters. The present technology can be applied to, for example, an image sensor provided with a GMR filter, such as a back-side-illuminated or front-side-illuminated CMOS image sensor.

A detection device for detecting at least the occurrence and location of occurrence of sensor element signals that are generated by sensor elements, includes an array of detector element circuits each generating a element row output and at least one element column output. The detection device determines, for each row of detector element circuits, at least a first row summation signal corresponding to a sum of the element row outputs of the detector element circuits of this row, and a row address signal indicating that the first row summation signal crosses a threshold. The detection device also determines, for each column of detector element circuits, at least a first column summation signal corresponding to a sum of the element column outputs of the detector element circuits of this column, and a column address signal indicating that the first column summation signal crosses a threshold.

An image sensor is provided. The image sensor includes: a pixel array including a plurality of pixels arranged along rows and columns; and a row driver which drives the plurality of pixels for each of the rows, wherein each of the plurality of pixels includes a plurality of sub-pixels, each of the plurality of sub-pixels includes a plurality of photoelectric conversion elements sharing a floating diffusion area with each other, and a micro lens disposed to overlap the plurality of photoelectric conversion elements, a readout area is defined on the pixel array in accordance with a preset readout mode, and the row driver generates a drive signal for reading out signals provided from a photoelectric conversion element included in the readout area from among the plurality of photoelectric conversion elements, and provides the drive signal to the pixel array.

A solid-state imaging device capable of performing encryption processing with enhanced security by quite extremely safely generating unique information and performing encryption processing based on the generated unique information. There is provided a solid-state imaging device including a unique information generation unit that generates predetermined analog information, a unique value generation unit that generates a predetermined unique value based on the predetermined analog information, and an encryption processing unit that performs encryption processing using the predetermined unique value, in which the unique value generation unit includes a detection unit that converts the predetermined analog information into digital information, and a unique value calculation unit that calculates the predetermined unique value using the digital information, in which the solid-state imaging device further includes a high-pass filter that passes a high-frequency signal for at least one of the analog information or the digital information.