An example imaging sensor comprises a bulk silicon substrate and a pixel array. The pixel array comprises an active pixel region including an active pixel subarray, an optical black pixel region including an optical black pixel subarray, and an optical black dummy pixel region including an optical black dummy pixel subarray, the optical black dummy pixel region positioned between the active pixel region and the optical black pixel region. A near-infrared absorber is positioned between the active pixel region and the optical black pixel region, the near-infrared absorber comprising a material having a higher near-infrared absorption coefficient than that of silicon.

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for vehicle applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for vehicle apparatuses such as automobiles, boats, airplanes, and drones, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

A pixel portion includes photodiodes formed on a semiconductor substrate as photoelectric conversion portions, and includes: a high absorption layer (HA layer) for controlling a reflection component of incident light on one surface side of the photodiodes (photoelectric conversion portions), and re-diffusing the incident light in the photoelectric conversion portions, on one surface side of the photodiodes upon which light is incident; and a diffused light suppression structure for suppressing diffused light (caused by light scattering) in a light incident path toward one surface side of the photoelectric conversion portions including the high absorption layer. Due to this, a solid-state imaging apparatus capable of reducing crosstalk between pixels, achieving miniaturization of pixel size, reducing color mixing, and achieving high sensitivity and high performance can be realized.

Disclosed is a light receiving element including an on-chip lens, a wiring layer, and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a photodiode, a first transfer transistor that transfers electric charge generated in the photodiode to a first charge storage portion, a second transfer transistor that transfers electric charge generated in the photodiode to a second charge storage portion, and an interpixel separation portion that separates the semiconductor layers of adjacent pixels from each other, for at least part of the semiconductor layer in the depth direction. The wiring layer has at least one layer including a light blocking member. The light blocking member is disposed to overlap with the photodiode in a plan view.

The present technology relates to a light receiving element, a distance measurement module, and electronic equipment which are capable of reducing leakage of incident light to adjacent pixels. A light receiving element includes a semiconductor layer in which photodiodes performing photoelectric conversion of infrared rays are formed in units of pixels, and a wiring layer in which a transfer transistor reading charge generated by the photodiodes is formed, and an inter-pixel light shielding unit that shields the infrared rays is formed at a pixel boundary portion of the wiring layer. The present technology can be applied to, for example, a distance measurement module that measures a distance to a subject, and the like.

To provide an imaging device that allows miniaturization to be achieved in an in-plane direction without impairing operation performance. This imaging device includes a first pixel and a second pixel. The first pixel includes m (m represents an integer greater than or equal to 2) first wiring lines and m first gate electrodes that are coupled to the m respective first wiring lines. The second pixel includes n (n represents a natural number smaller than m) second wiring lines and n second gate electrodes that are coupled to the n respective second wiring lines.

A photosensitive sensor includes a pixel formed by a photosensitive region in a first semiconductor material, a read region in a second semiconductor material, and a transfer gate facing the parts of the first semiconductor material and the second semiconductor material located between the photosensitive region and the read region. The first semiconductor material and the second semiconductor material have different band gaps and are in contact with one another to form a heterojunction facing the transfer gate.

An integrated sensor includes a substrate made of a first semiconductor material having a first optical refractive index. The substrate includes a pixel array, wherein each pixel has a photosensitive active zone formed by an index contrast zone including a matrix of the first semiconductor material and a periodic structure embedded in the matrix. The periodic structure extends from the backside of the substrate and has a two-dimensional periodicity in a parallel plane with the backside. A value of the periodicity is linked with the wavelength of the optical signal and with the first refractive index. Elements of the periodic structure are formed of a second optically transparent material having a second refractive index less than the first refractive index. These elements are positioned at locations defined by the periodicity except for at one location defining a region, preferably central, that is devoid of a corresponding one of the elements.

A method includes providing a semiconductor substrate having a front side surface and a back side surface opposite to the front side surface. A photosensitive region of the semiconductor substrate is etched to form a recess. A semiconductor material is deposited on the semiconductor substrate to form a radiation sensing member filling the recess. The semiconductor material has an optical band gap energy smaller than 1.77 eV. A device layer is formed over the front side surface of the semiconductor substrate and the radiation sensing member. A trench isolation is formed in an isolation region of the semiconductor substrate and extending from the back side surface of the semiconductor substrate.

According to one embodiment, a display device includes a first substrate and a second substrate. The first substrate includes a first switching element, a second switching element, a first organic insulating layer, a second organic insulating layer, a third organic insulating layer, a first connection electrode electrically connected to the first switching element, a second connection electrode electrically connected to the first connection electrode, a pixel electrode electrically connected to the second connection electrode, and a photoelectric conversion element electrically connected to the second switching element.