An imaging device including pixels each including: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the second electrode of each of the pixels being electrically connected to each other; and a transistor having a gate electrically connected to the first electrode. The imaging device further including voltage supply circuitry electrically connected to the second electrode, in which the voltage supply circuitry supplies a first voltage to the second electrode in an exposure period, the voltage supply circuitry supplies a second voltage to the second electrode in a non-exposure period, an a potential difference between the first electrode and the second electrode in the non-exposure period is less than a potential difference between the first electrode and the second electrode in the exposure period.

An imaging device that does not need a lens is provided. The imaging device includes a first layer, a second layer, and a third layer. The second layer is positioned between the first layer and the third layer. The first layer includes a diffraction grating. The second layer includes a photoelectric conversion element. The third layer includes a transistor including an oxide semiconductor in an active layer.

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a microbolometer array. The microbolometer array includes a plurality of microbolometers. Each microbolometer includes a microbolometer bridge that includes a first portion and a second portion. The first portion includes a resistive layer configured to capture infrared radiation. The second portion includes a second portion having a plurality of perforations defined therein.

An open circuit voltage photodetector comprises a photovoltaic device including a photovoltaic junction, and a transistor. The photovoltaic device is connected to the gate terminal of the transistor to input an open circuit voltage of the photovoltaic device to the gate terminal. An array of such photodetectors and a readout integrated circuit forms an image sensor. In a photodetection method, an open circuit voltage is generated in a photovoltaic device in response to illumination by incident radiation, and the open circuit voltage is applied to a gate terminal of a transistor to modulate a channel current flowing in a channel of the transistor. A readout electronic circuit may be fabricated with an extra transistor, and a photovoltaic device disposed on the readout electronic circuit and electrically connected to apply an open circuit voltage of the photovoltaic device to a gate of the extra transistor.

A pixel for an image sensor includes a resistive microbolometer sensor portion, a visible image sensor portion, and an output path. The resistive microbolometer sensor portion outputs a signal corresponding to an infrared (IR) image sensed by the resistive microbolometer sensor portion. The resistive microbolometer sensor portion uses no bias current. The visible image sensor portion outputs a signal corresponding to a visible image sensed by the visible image sensor portion. The output path is shared by the resistive microbolometer sensor portion and the visible image sensor portion, and may be controlled to selectively output the signal corresponding to the IR image, the signal corresponding to the visible image, or a fused image based on the IR image and the visible image. The resistive microbolometer sensor portion may sense a near infrared image or a longwave infrared image.

An image sensor includes a visible light sensor portion and an infrared sensor portion arranged on the visible light sensor portion. The visible light sensor portion includes a first sensor layer and a first signal wiring layer, wherein a plurality of visible light sensing elements are arrayed in the first sensor layer and the first signal wiring layer is configured to process a signal output from the first sensor layer. The infrared sensor portion includes a second sensor layer in which a plurality of infrared sensing elements are arrayed, and a second signal wiring layer configured to process a signal output from the second sensor layer. The infrared sensor portion and the visible light sensor portion form a single monolithic structure which is effective in obtaining high resolution.

A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate, a stack covering the substrate and including a first photosensitive layer, an electrically-insulating layer, a second photosensitive layer, and color filters. The image sensor further includes electrodes on either side of the first photosensitive layer and delimiting first photodiodes, and electrodes on either side of the second photosensitive layer and delimiting second photodiodes. The first photosensitive layer absorbs the electromagnetic waves of the visible spectrum and of a portion of the infrared spectrum and the second photosensitive layer absorbs the electromagnetic waves of the visible spectrum and gives way to the electromagnetic waves of the portion of the infrared spectrum.

A thermographic sensor is proposed. The thermographic sensor includes a plurality of sensing elements each comprising at least one thermo-couple. The thermographic sensor is integrated on a semiconductor on insulator body that is patterned to define a grid suspended from a substrate; for each sensing element, the grid has a frame with the cold joint of the thermo-couple, a plate with the hot joint of the thermo-couple and one or more arms sustaining the plate from the frame. The frames include one or more conductive layers of thermally conductive material for thermally equalizing the cold joints with the substrate. Moreover, each sensing element may also include a processing circuit for the thermo-couple that is integrated on the corresponding frame. A thermographic device including the thermographic sensor and a corresponding signal processing circuit, and a system including one or more thermographic devices are also proposed.

An imager pixel comprising a micro-platform supported by phononic nanowires, the nanowires providing an extreme-level of thermal isolation from a surrounding substrate. The micro-platform in embodiments comprises thermal sensors sensitive to heat from absorbed incident longwave/shortwave photonic irradiation. In embodiments, the pixel photonic sensing structure comprises both a thermal sensor together with a separate photodiode/phototransistor/photogate for sensing RGB and NIR wavelengths. Some embodiments comprise a micro-platform with an integral Peltier thermoelectric element permitting in situ refrigeration to cryogenic temperatures.

Provided are a solid-state image-capturing element and an electronic device capable of reducing the capacitance by using a hollow region. At least a part of a region between an FD wiring connected to a floating diffusion and a wiring other than the FD wiring is a hollow region. The present disclosure can be applied to a CMOS image sensor having, for example, a floating diffusion, a transfer transistor, an amplifying transistor, a selection transistor, a reset transistor, and a photodiode.