A photoelectric conversion panel includes a thin-film transistor provided in a first region, a photoelectric conversion element provided in the first region, a first organic film having a first groove portion provided in a second region, a second organic film having a second groove portion provided in the second region and in a position different from that of the first groove portion, a first inorganic film formed so as to cover the first organic film and cover an inner surface of the first groove portion, and a second inorganic film formed so as to cover the second organic film and cover an inner surface of the second groove portion.

An amorphous-silicon photoelectric device and a fabricating method thereof are disclosed. The amorphous-silicon photoelectric device includes: a substrate; a thin-film transistor and a photosensor with the photodiode structure, which are provided at different positions on the substrate; and a contact layer; in which the contact layer is located below the photosensor, and the contact layer is partially covered by the photosensor, moreover, the contact layer and the gate-electrode layer in the thin-film transistor are provided in a same layer and of a same material. According to the technical solutions of the present disclosure, the fabricating procedure of an a-Si photoelectric device can be simplified, thereby improving the fabrication efficiency and reducing costs.

Two-terminal electronic devices, such as photodetectors, photovoltaic devices and electroluminescent devices, are provided. The devices include a first electrode residing on a substrate, wherein the first electrode comprises a layer of metal; an I-layer comprising an inorganic insulating or broad band semiconducting material residing on top of the first electrode, and aligned with the first electrode, wherein the inorganic insulating or broad band semiconducting material is a compound of the metal of the first electrode; a semiconductor layer, preferably comprising a p-type semiconductor, residing over the I-layer; and a second electrode residing over the semiconductor layer, the electrode comprising a layer of a conductive material. The band gap of the material of the semiconductor layer, is preferably smaller than the band gap of the I-layer material. The band gap of the material of the I-layer is preferably greater than 2.5 eV.

The present approaches relate to the fabrication of non-rectangular (e.g., non-square) light imager panels having comparable active areas to rectangular light imager panels but manufactured using fewer c-Si wafers. Such light imager panels may be generally squircle shaped (e.g., a square or rectangle with one or more rounded corners and may be manufactured using conventional crystalline silicon (c-Si) wafers, such as 8″ wafers.

Fabrication and use of an X-ray detector scan interface having separate enable and reset lines for each line (e.g., row) of pixels is described. In certain implementations, the respective enable and reset lines are connected such that activation of an enable line for a given line of pixels is concurrent with activation of a reset line for a different (e.g., preceding) row of pixels. In this manner, readout of one row of pixels is performed in conjunction with resetting the row of pixels readout in the preceding operation. In another technical implementation, a non-rectangular detector is divided into quadrants, with alternating quadrants configured for scan module or data module operations such that no quadrant has overlapping scan and data interconnections at the connection finger regions.

PbO-based photoconductive X-ray imaging devices are disclosed in which the PbO photoconductive layer exhibits an amorphous crystal structure. According to selected embodiments, the amorphous PbO photoconductive layer may be formed by providing a substrate inside an evacuated evaporation chamber and evaporating lead oxide to deposit a photoconductive lead oxide layer onto the substrate, while subjecting the photoconductive layer to ion bombardment with oxygen ions having an ion energy between 25 and 100 eV. X-ray direct detection imaging devices formed from such amorphous PbO photoconductive layers are shown to exhibit image lag that is suitable for fluoroscopic imaging.

According to an embodiment, a device comprises a direct conversion compound semiconductor layer configured to convert high energy radiation photons into an electric current, the direct conversion compound semiconductor layer comprising: a pixel array positioned in the direct conversion compound semiconductor layer, including pixels located at an outermost circumference, wherein the pixels comprise signal pads; a guard ring encircling the pixel array, wherein the pixels at the outermost circumference are closest to the guard ring; guard ring contact pads, wherein the guard ring contact pads are situated in place of some of the pixel signal pads at the outermost circumference and connected to the guard ring; wherein the guard ring contact pads are further situated asymmetrically with respect to a symmetry x-axis and a symmetry y-axis of the direct conversion compound semiconductor layer. Other embodiments relates to a detector comprising an array of tiles according to the device, and an imaging system comprising: an x-ray source and the detector.

Disclosed herein is an apparatus suitable for detecting X-ray, the apparatus comprising: a first substrate comprising a plurality of first electric contacts; a first chip layer comprising a plurality of first chips, wherein each of the first chips comprises a first electrode and is bonded to the first substrate such that the first electrode is electrically connected to at least one of the first electrical contacts; a second substrate comprising a plurality of second electric contacts; and a second chip layer comprising a plurality of second chips, wherein each of the second chips comprises a second electrode and is bonded to the second substrate such that the second electrode is electrically connected to at least one of the second electrical contacts, wherein the first chip layer and the second chip layer are bonded to each other such that at least two second chips are bonded to a same first chip.

An image sensor includes a first semiconductor chip including first and second surfaces; a second semiconductor chip including first and second surfaces; and a first adhesive layer between the second surface of the first semiconductor chip and the second surface of the second semiconductor chip, the first semiconductor chip being stacked on the second semiconductor chip via the first adhesive layer such that a footprint of the first semiconductor chip is larger than a footprint of the second semiconductor chip with respect to a plan view of the image sensor, the first semiconductor chip including an array of unit pixels configured to capture light corresponding to an image and to generate image signals based on the captured light, the second semiconductor chip including first peripheral circuits configured to control the array of unit pixels and receive the generated image signals.

An imaging panel includes a photoelectric conversion element disposed on a substrate. The photoelectric conversion element includes a cathode electrode, a first semiconductor layer having a first conductive type, the first semiconductor layer being in contact with the cathode electrode, a second semiconductor layer having a second conductive type different from the first conductive type, the second semiconductor layer being joined to the first semiconductor layer, and an anode electrode in contact with the second semiconductor layer. The second semiconductor layer has a greater extinction coefficient as closer to the anode electrode.