A scintillator includes a scintillator layer including a phosphor and an augmenting agent and has an optical reflectance A1 at a wavelength 440 nm and an optical reflectance B1 at a wavelength 520 nm, wherein when an optical reflectance at the wavelength 440 nm is defined as A2 and an optical reflectance at the wavelength 520 nm is defined as B2 after exposure to 2,000R of radiation, ratios between the optical reflectances “A=A2/A1” and “B=B2/B1” before and after exposure to radiation satisfy “0.70≦A/B≦1.10”.

An X-ray detection substrate is provided. The X-ray detection substrate includes: a base, including at least a detection function region; a drive circuit layer, including a plurality of detection pixel circuits disposed in the detection function region; a first electrode layer, disposed in the detection function region and including a plurality of first electrodes that are disconnected from each other and arranged in an array, wherein each first electrode is correspondingly connected to one detection pixel circuit; a conversion material layer, disposed in the detection function region and covering the first electrode layer, wherein at least one surface, parallel to a thickness direction of the base, of the conversion material layer is an X-ray receiving surface; and a second electrode layer, disposed in the detection function region and covering the conversion material layer.

Disclosed herein are apparatuses for detecting radiation and methods of making them. The method comprises forming a recess into a semiconductor substrate, wherein a portion of the semiconductor substrate extends into the recess and is surrounded by the recess; depositing semiconductor nanocrystals into the recess, the semiconductor nanocrystals having a different composition from the semiconductor substrate; forming a first doped semiconductor region in the semiconductor substrate; forming a second doped semiconductor region in the semiconductor substrate; wherein the first doped semiconductor region and the second doped semiconductor region form a p-n junction that separates the portion from the rest of the semiconductor substrate.

The present disclosure provides an active pixel sensor and a flat panel detector. The active pixel sensor includes: a light sensing device configured to convert light sensed by the light sensing device into charges and supply the charges to a floating diffusion node; an amplification sub-circuit configured to amplify a signal according to a potential at the floating diffusion node and output the amplified signal through the output terminal; an adjustment sub-circuit configured to adjust, in response to a first control signal, a conversion gain from an amount of the light sensed by the light sensing device to the potential at the floating diffusion node; and a read sub-circuit configured to transmit a voltage of the input terminal of the read sub-circuit to the output terminal of the read sub-circuit according to a scan signal provided by the scan line.

A device and process in which a single continuous depositional layer of a polycrystalline photoactive material is deposited on an integrated charge storage, amplification, and readout circuit with an irregular surface wherein the polycrystalline photoactive material is comprised of a II-VI semiconductor compound or alloys of II-VI compounds.

Disclosed herein is an image sensor comprising: a plurality of packages arranged in a plurality of layers; wherein each of the packages comprises an X-ray detector mounted on a printed circuit board (PCB); wherein the packages are mounted on one or more system PCBs; wherein within an area encompassing a plurality of the X-ray detectors in the plurality of packages, a dead zone of the packages in each of the plurality of layers is shadowed by the packages in the other layers.

Monolithic pixel detectors, systems and methods for the detection and imaging of electromagnetic radiation with high spectral and spatial resolution comprise a Si wafer with a CMOS processed pixel readout bonded to an absorber wafer in wafer bonds comprising conducting bonds between doped, highly conducting charge collectors in the readout and highly conducting regions in the absorber wafer and poorly conducting bonds between regions of high resistivity.

An imaging apparatus includes a pixel region including a plurality of pixels, and bias wiring laid on a light incident side of pixels to supply a bias from a power supply to the pixels in the pixel region via a second side defining the pixel region. The bias wiring includes first wiring portions and second wiring portions laid around the pixels. The first wiring portions are laid in a Y direction away from the second side, and the second wiring portions are laid in an X direction orthogonal to the Y direction. The first wiring portions include a light non-transmissive member. A resistance of the first wiring portion per pixel is smaller than that of the second wiring portion per pixel. A loss of light due to the second wiring portion is smaller than that of the light incident due to the first wiring portion.

A detection layer (416) for a radiation detector (400) includes a porous silicon membrane (418). The porous silicon membrane includes silicon (419) with a first side (430) and a second opposing side (432), a plurality of pores (420) extending entirely through the silicon from the first side to the second opposing side, each including shared walls (426), at least one protrusion of silicon (424) protruding out and extending from the first side a distance (504, 604, 704). The porous silicon membrane further includes a plurality of radiation sensitive quantum dots (422) in the pores and a quantum dot layer disposed on the first side and having a surface (434) and a thickness (506, 606, 706), wherein the thickness is greater than the distance.

Exemplary aspects of the present invention are directed to an imaging sensor system for beams in the 1-200 nm spectral regions. The system may include a downconverter for converting the beam to visible light, optical filter elements, and relay optics for directing the visible light to the imaging detector. The relay optics convey the image and/or optical beam profile intensity to a 2-D imaging array such as CMOS, CCD (or other imaging detector device). The system can be used in a vacuum or in ambient non-vacuum conditions which may include a purged environment.