An electromagnetic wave detector includes a semiconductor layer, a two-dimensional material layer electrically connected to the semiconductor layer, a first electrode electrically connected to the two-dimensional material layer without the semiconductor layer interposed therebetween, a second electrode electrically connected to the two-dimensional material layer with the semiconductor layer interposed therebetween, and a ferroelectric layer in contact with at least a part of the two-dimensional material layer.

To prevent damage to an imaging element configured by bonding a plurality of semiconductor chips together. The imaging element includes a plurality of semiconductor chips each having a semiconductor substrate and a wiring region. One of the plurality of semiconductor chips is provided with a photoelectric conversion unit for performing photoelectric conversion of incident light. Two of the plurality of semiconductor chips are provided with first pads in which surfaces of wiring regions of the two semiconductor chips are bonded to each other and which are arranged on the surfaces of the wiring regions and bonded to each other. At least one of the two semiconductor chips is provided with a second pad arranged in the wiring region and having a protrusion formed thereon so as to face toward the bonded surface. The second pad is configured to have a size different from that of the first pad.

An example includes a method for producing a multipixel detector, the method including: providing a bottom layer including a first and a second bottom electrode, depositing an electrically insulating layer on the bottom layer, forming a first opening through the electrically insulating layer, depositing a first photon absorbing material in the first opening, forming a second opening through the electrically insulating layer, depositing a second photon absorbing material in the second opening, planarizing the deposited electrically insulating layer, the first photon absorbing material, and the second photon absorbing material to form a flat surface, and forming a common top electrode on top of the flat surface.

A display substrate is provided. The display substrate includes a gate electrode disposed on a base; a gate insulating layer disposed on the base and covering the gate electrode; a semiconductor layer disposed on the gate insulating layer and overlapping the gate electrode; a source electrode and a drain electrode disposed on the semiconductor layer and connected to the semiconductor layer; a pixel electrode disposed on the gate insulating layer, connected to the drain electrode, and extending from the drain electrode; a common electrode insulated from the pixel electrode and overlapping the pixel electrode; and a semiconductor pattern disposed between the gate insulating layer and the pixel electrode, the semiconductor pattern overlapping the pixel electrode. The semiconductor pattern comprises a same material as the semiconductor layer and extends from the semiconductor layer.

Provided is a display device. A poly-Si layer is disposed on a substrate. A first metal layer is disposed on the poly-Si layer, and a metal oxide layer is disposed on the first metal layer. A second metal layer is disposed on the metal oxide layer. The first metal layer is overlapped with the second metal layer. The first metal layer and the second metal layer may be gate lines connected to different TFTs. Thus, in the display device, a plurality of gate lines may be disposed so as to be overlapped with each Oxide other. Therefore, an area occupied by a circuit part in the display device can be reduced. Accordingly, it is possible to manufacture a display device with higher resolution, a transparent display device with improved transmittance, and a display device with a reduced size of a non-display area.

An image sensor may include a symmetrical imaging pixel with a floating diffusion region. The floating diffusion region may be formed in the center of the imaging pixel. A shallow p-well may be formed around the floating diffusion region. A transfer gate configured to transfer charge from a photodiode to the floating diffusion region may be ring-shaped with an opening that overlaps the floating diffusion region. Isolation regions including deep trench isolation and a p-well may surround the photodiode of the imaging pixel. A p-stripe may couple the shallow p-well around the floating diffusion region to the isolation regions. The floating diffusion regions of neighboring pixels may be coupled together with additional conductive layers to implement shared configurations.

A more preferable pixel for detecting a focal point may be formed by using a photoelectric converting film. A solid-state image sensor includes a first pixel including a photoelectric converting unit formed of a photoelectric converting film and first and second electrodes which interpose the same from above and below in which at least one of the first and second electrodes is a separated electrode separated for each pixel, and a second pixel including the photoelectric converting unit in which the separated electrode is formed to have a planar size smaller than that of the first pixel and a third electrode extending at least to a boundary of the pixel is formed in a region which is vacant due to a smaller planar size. The present disclosure is applicable to the solid-state image sensor and the like, for example.

Provided are an image sensor and a method of manufacturing method of manufacturing the image sensor. The image sensor includes a substrate, photoelectric transducers and switching elements formed in layers on the substrate in this order. Each of the photoelectric transducers includes a hydrogenated amorphous silicon layer. Each of the switching elements includes an amorphous oxide semiconductor layer. The image sensor further includes a blocking layer arranged between the hydrogenated amorphous silicon layers of the photoelectric transducers and the amorphous oxide semiconductor layers of the switching elements, where the blocking layer suppresses penetration of hydrogen separated from the hydrogenated amorphous silicon layers.

An X-ray detector may include a plurality of pixels on a substrate, a first insulating layer configured to cover the plurality of pixels, an electrode block configured to penetrate the first insulating layer and be in contact with the plurality of pixels, a second insulating layer on the electrode block, and a metal wire configured to penetrate the second insulating layer and be in contact with the electrode block. Each of the plurality of pixels may include a first electrode on the substrate, a photoelectronic conversion device on the first electrode, and a second electrode on the photoelectronic conversion device.

An imaging panel includes a photoelectric conversion layer. The surface of the photoelectric conversion layer is partly covered with an inorganic insulating film having a first opening above the photoelectric conversion layer. An organic insulating film having a second opening having a larger opening width than the first opening is disposed on the inorganic insulating film. A surface of the inorganic insulating film that is not covered with the organic insulating film is covered with the protection film at the inside of the second opening. The etching rate of the protection film upon etching with an etchant containing an acid is equal to or higher than that of the inorganic insulating film. The surface of the photoelectric conversion layer at the first opening and the surface of the protection film are covered with an electrode.