An array substrate of an X-ray sensor and a method for manufacturing the same are provided, the method comprising a step of forming a thin-film transistor element and a photodiode sensor element, wherein the step of forming the thin-film transistor element comprises: forming a gate electrode on an base substrate by a mask process; depositing a gate insulating layer on the base substrate on which the gate electrode is formed; the step of forming the photodiode sensor element comprises: forming an ohmic contact layer on the base substrate through the same mask process while forming the gate electrode; forming a semiconductor layer and a transparent electrode through a mask process on the substrate on which the ohmic contact layer is formed; depositing the gate insulating layer on the base substrate on which the semiconductor layer and the transparent electrode are formed while depositing the gate insulating layer on the base substrate on which the gate electrode is formed. A gate pattern and an ohmic contact layer are formed through the same mask process, and a passivation layer substitutes a channel blocking layer to reduce the number of the mask processes and simplify the manufacturing process and improve throughput and yield of the product.

Image quality is improved.

In an image pickup element, an interval between adjacent light receiving elements on a light receiving surface is changed depending on a position on the light receiving surface. Further, the image pickup element is manufactured by a method of manufacturing the image pickup element including layering photodiodes by repeatedly performing a silicon epitaxial process and an ion injection process. Further, the image pickup element is manufactured by the method of manufacturing the image pickup element including changing an interval between the photodiodes adjacent on the light receiving surface of the image pickup element in each layer depending on a position on the light receiving surface in addition to the layering thereof.

In some embodiments in accordance with the present disclosure, an image sensor is provided. The image sensor includes a substrate having a body. The body includes a first surface and a second surface opposite to the first surface. A through via is configured to extend from the first surface to the second surface. An intermediate layer is disposed over the body and configured to cover the through via. An image sensing device is disposed over the intermediate layer. In addition, a lens structure is disposed over the substrate, the intermediate layer and the image sensing device. In certain embodiments, the image sensing device is curved. In some embodiments, the image sensing device includes a semiconductor chip having a CMOS image sensing array.

In manufacturing an image sensor for FPD having an oxide semiconductor TFT as a switching element, a large amount of hydrogen contained in raw gas is diffused in the oxide semiconductor at the time of forming a-Si photo diode (PD) which is a photoelectric conversion element, causing significant variation in the characteristic of TFT which may thereby not operate. In an image sensor in which an oxide semiconductor TFT and a-Si PD are formed on a substrate in this order, a gas barrier film is disposed between the oxide semiconductor TFT and the PD, and the drain terminal (drain metal) of the oxide semiconductor TFT is connected to one terminal (lower electrode) of the PD via connection wiring (bridge wiring) formed on a protective film arranged over the PD.

A solid-state image sensing element including a transistor with stable electrical characteristics (e.g., significantly low off-state current) is provided. Two different element layers (an element layer including an oxide semiconductor layer and an element layer including a photodiode) are stacked over a semiconductor substrate provided with a driver circuit such as an amplifier circuit, so that the area occupied by a photodiode is secured. A transistor including an oxide semiconductor layer in a channel formation region is used as a transistor electrically connected to the photodiode, which leads to lower power consumption of a semiconductor device.

A more preferable pixel for detecting a focal point may be formed by using a photoelectric converting film. A solid-state image sensor includes a first pixel including a photoelectric converting unit formed of a photoelectric converting film and first and second electrodes which interpose the same from above and below in which at least one of the first and second electrodes is a separated electrode separated for each pixel, and a second pixel including the photoelectric converting unit in which the separated electrode is formed to have a planar size smaller than that of the first pixel and a third electrode extending at least to a boundary of the pixel is formed in a region which is vacant due to a smaller planar size. The present disclosure is applicable to the solid-state image sensor and the like, for example.

An amorphous-silicon photoelectric device and a fabricating method thereof are disclosed. The amorphous-silicon photoelectric device includes: a substrate; a thin-film transistor and a photosensor with the photodiode structure, which are provided at different positions on the substrate; and a contact layer; in which the contact layer is located below the photosensor, and the contact layer is partially covered by the photosensor, moreover, the contact layer and the gate-electrode layer in the thin-film transistor are provided in a same layer and of a same material. According to the technical solutions of the present disclosure, the fabricating procedure of an a-Si photoelectric device can be simplified, thereby improving the fabrication efficiency and reducing costs.

The present disclosure provides a photoelectric conversion array substrate, its manufacturing method and a photoelectric conversion device. The photoelectric conversion array substrate includes a TFT arranged on a base substrate and a photodiode connected to the TFT. A photosensitive surface of the photodiode is a convex surface.

An array substrate and manufacturing method thereof, an X-ray flat panel detector and an image pickup system are provided. The array substrate is divided into a plurality of detection units, and each of the detection units has a first electrode and a photoelectric conversion structure provided therein. The first electrode is disposed on a side of the photoelectric conversion structure opposite to a light incident side, and is electrically connected to the photoelectric conversion structure. A reflective layer that is electrically conductive is further included between the first electrode and the photoelectric conversion structure, and a surface of the reflective layer facing the photoelectric conversion structure is a reflection surface. The utilization rate of light can be enhanced by the array substrate as stated in embodiments of the invention, so that the detection accuracy of the X-ray flat panel detector is enhanced.

The present disclosure provides a CMOS image sensor and a pixel structure thereof, and a method for manufacturing a deep trench isolation grid structure in the pixel structure. The method for manufacturing the deep trench isolation grid structure comprises: depositing a first isolation layer and a second isolation layer sequentially on the side walls and bottom surface of each deep trench; and depositing a third isolation layer that fills each deep trench on the upper surface of the second isolation layer, so that the first isolation layer, the second isolation layer and the third isolation layer in the plurality of deep trenches constitute the grid. The deep trench isolation grid structure formed by the method can effectively reduce electrical crosstalk between adjacent grid lines, thereby improving the device performance of the CMOS image sensor which is built upon the deep trench isolation grid structure and the pixel structure thereof.