Provided is an imaging element including: a light receiving element 20; and a stacked structure body 130 that is placed on a light incident side of the light receiving element 20 and in which a semiconductor layer 131 and a nanocarbon film 132 to which a prescribed electric potential is applied are stacked from the light receiving element side. The semiconductor layer 131 is made of a wide gap semiconductor with an electron affinity of 3.5 eV or more, or is made of a semiconductor with a band gap of 2.0 eV or more and an electron affinity of 3.5 eV or more.

An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

Image sensors and methods of manufacturing image sensors are provided. One such method includes forming a structure that includes a semiconductor layer extending from a front side to a back side, and a capacitive insulation wall extending through the semiconductor layer. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductor or a semiconductor material. Portions of the semiconductor layer and the region of the conductor or semiconductor material are selectively etched, and the first and second insulating walls have portions protruding outwardly beyond a back side of the semiconductor layer and of the region of the conductor or semiconductor material. A dielectric passivation layer is deposited on the back side of the structure, and portions of the dielectric passivation layer are locally removed on a back side of the protruding portions of the first and second insulating walls.

The present disclosure provides an array substrate, an electronic device and a manufacturing method of the array substrate. The array substrate includes a base substrate, and a first transistor and a second transistor on the base substrate, a first electrode of the first transistor being connected to a second electrode of the second transistor; the array substrate further includes a photodiode including a first electrode, a second electrode, and a photosensitive layer between the first electrode and the second electrode, and the first electrode is electrically connected to a gate of the first transistor. In the arrangement, the first transistor and the second transistor are connected in series to form one control unit, and the uniformity and stability of the control unit are greatly improved.

A method of producing a semiconductor epitaxial wafer is provided. The method includes irradiating a surface of a semiconductor wafer with cluster ions to form a modified layer in a surface portion of the semiconductor wafer, in which the modified layer includes a constituent element of the cluster ions in solid solution. The method further includes forming an epitaxial layer on the modified layer of the semiconductor wafer. The irradiating is performed such that a portion of the modified layer in a thickness direction becomes an amorphous layer, and an average depth of an amorphous layer surface from a semiconductor wafer surface-side of the amorphous layer is at least 20 nm from the surface of the semiconductor wafer.

An array substrate for a digital X-ray detector, a digital X-ray detector including the same, and a method for manufacturing the same are disclosed. The array substrate reduces a step difference of a PIN diode, removes a bent part from a lower part to reduce characteristic deterioration of the PIN diode, and increases the size of a formation region of the PIN diode to increase a fill factor. To this end, the array substrate allows a source region of an active layer included in a thin film transistor to be in surface contact with a lower electrode of the PIN diode, and disposes the lower electrode over a planarized source region or a base substrate, such that a step difference of the PIN diode is reduced and fill factor is improved.

A fingerprint sensor includes: a thin film transistor disposed on a substrate; a first insulating layer disposed on the thin film transistor; a first sensing electrode disposed on the first insulating layer and connected to the thin film transistor; a second insulating layer disposed on the first sensing electrode and including an opening exposing the first sensing electrode; a sensing semiconductor layer disposed in the opening of the second insulating layer and on the first sensing electrode, and including an N-type semiconductor layer, an I-type semiconductor layer, and a P-type semiconductor layer, and a second sensing electrode disposed on the sensing semiconductor layer. An upper surface of the sensing semiconductor layer and an upper surface of the second insulating layer are coplanar.

A solid-state imaging device with high productivity and improved dynamic range is provided. In the imaging device including a photoelectric conversion element having an i-type semiconductor layer, functional elements, and a wiring, an area where the functional elements and the wiring overlap with the i-type semiconductor in a plane view is preferably less than or equal to 35%, further preferably less than or equal to 15%, and still further preferably less than or equal to 10% of the area of the i-type semiconductor in a plane view. Plural photoelectric conversion elements are provided in the same semiconductor layer, whereby a process for separating the respective photoelectric conversion elements can be reduced. The respective i-type semiconductor layers in the plural photoelectric conversion elements are separated by a p-type semiconductor layer or an n-type semiconductor layer.

The present disclosure provides an electronic device, including a thin film camera. The thin film camera includes an image processor arranged in the electronic device, and a film structure disposed to an outer surface of the electronic device. The film structure is configured for processing incident lights by a photosensitive array to capture an image, and the image processor is in communication with the film structure.

An image sensor includes a plurality of pixel sensing portions arranged in m columns and n rows. Each of the pixel sensing portions includes at least one thin film transistor and a photodetection diode (13) including n-type (16), intrinsic (15) and p-type (14) semiconductor layers. The p-type semiconductor layer (14) includes a multi-layered structure including lower (142) and upper (141) p-type semiconductor layered portions. The upper p-type semiconductor layered portion (141) has a band gap greater than 1.7 eV and has a p-type dopant in an amount not less than two times of that of the lower p-type semiconductor layered portion (142). An image sensing-enabled display apparatus and a method of making the image sensor are also disclosed.