In a general aspect, integrated spatial phase wafer-level imaging is described. In some aspects, an integrated imaging system an integrated image sensor and an edge processor. The integrated image sensor may include: a polarizer pixel configured to filter electromagnetic (EM) radiation and to allow filtered EM radiation having a selected polarization state to pass therethrough; a radiation-sensing pixel configured to detect the filtered EM radiation and to generate a signal in response to detecting the filtered EM radiation; and readout circuitry configured to perform analog preprocessing on the signal generated by the radiation-sensing pixel. The edge processor may be configured to: generate first-order primitives and second-order primitives based on the analog preprocessed signal from the readout circuitry; and determine a plurality of features of an object located in a field-of-view of the radiation-sensing pixel based on the first-order primitives and the second-order primitives.

A method includes epitaxially growing a first III-V compound layer over a semiconductive substrate. A second III-V compound layer is epitaxially grown over the first III-V compound layer. A source/drain contact is formed over the second III-V compound layer. A gate structure is formed over the second III-V compound layer. A pattern is formed shielding the gate structure and the source/drain contact, in which a portion of the second III-V compound layer is free from coverage by the pattern.

A light-receiving device includes at least one pixel. The at least one pixel includes a first electrode; a second electrode; and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer is configured to convert incident infrared light into electric charge. The photoelectric conversion layer has a first section and a second section. The first section is closer to the first electrode than the second section, and the second section is closer to the second electrode than the first section. At least one of the first section and the second section have a plurality of surfaces.

Disclosed herein is a method of producing an infrared detector. In certain embodiments, the method includes: forming a planar multi-layer structure including an absorber including a superlattice structure; patterning the planar multi-layer structure; etching the planar multi-layer structure to define a plurality of pixels, the sidewalls of the plurality of pixels includes a sidewall roughness and multiple types of surface oxides; and performing a surface treatment process to the plurality of pixels in order to reduce the sidewall roughness and replace the surface oxides with a chlorinated surface morphology. The surface treatment process may reduce surface current of the infrared detector which may decrease the dark current in the infrared detector.

An integrated circuit comprises a substrate composed of crystalline semiconductor. An optoelectronic device is formed at the substrate and includes a plurality of transducers. A thin-film semiconductor layer is situated over the optical device, and circuitry is formed at the thin-film semiconductor layer. The circuitry may include a plurality of transistors electrically coupled to the optoelectronic device by a set of layer interconnects.

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

A photoelectric conversion element includes a first electrode including a plurality of electrodes independent from each other, a second electrode disposed to be opposed to the first electrode, an n-type photoelectric conversion layer including a semiconductor nanoparticle, and a semiconductor layer including an oxide semiconductor material. The semiconductor layer is provided between the first electrode and the n-type photoelectric conversion layer. The n-type photoelectric conversion layer is provided between the first electrode and the second electrode. A carrier density of the n-type photoelectric conversion layer is higher than a carrier density of the semiconductor layer.

Inhibition of movement of charges in a semiconductor element (100) formed by growing a group III-V compound semiconductor layer on a silicon substrate (110) is prevented. The semiconductor element (100) includes a silicon substrate (110), a first compound semiconductor layer (140), a second compound semiconductor layer (150), and an electrode (121). The first compound semiconductor layer (140) is formed on the silicon substrate (110). The second compound semiconductor layer (150) is stacked on the first compound semiconductor layer (140). The electrode (121) is disposed on the silicon substrate (110) and controls movement of charges between the silicon substrate (110) and the second compound semiconductor layer (150) via the first compound semiconductor layer (140).

A decrease in image quality is suppressed. A solid-state imaging apparatus according to an embodiment includes: a photoelectric conversion unit (PD) including a material having a smaller band gap energy than silicon; and a circuit board joined to the photoelectric conversion unit, the circuit board including: a pixel signal generation circuit that generates a pixel signal having a voltage value corresponding to a charge generated in the photoelectric conversion unit; and a thermometer circuit that detects a temperature of the circuit board.

A light-receiving device of an embodiment of the present disclosure includes a photoelectric conversion layer that includes a first compound semiconductor with a first conductivity type and absorbs a wavelength of an infrared region, a first semiconductor layer formed on the photoelectric conversion layer, and an insulation layer formed to surround the photoelectric conversion layer and the first semiconductor layer, the first semiconductor layer having a second conductivity-type region at a middle region excluding a periphery facing the photoelectric conversion layer.