A semiconductor package structure including a sensor die, a substrate, a light blocking layer, a circuit layer, a dam structure and an underfill is provided. The sensor die has a sensing surface. The sensing surface includes an image sensing area and a plurality of conductive bumps. The substrate is disposed on the sensing surface. The light blocking layer is located between the substrate and the sensor die. The circuit layer is disposed on the light blocking layer. The sensor die is electrically connected to the circuit layer by the conductive bumps. The dam structure is disposed on the substrate and surrounds the image sensing area. Opposite ends of the dam structure directly contact the sensor die and the light blocking layer. The underfill is disposed between the dam structure and the conductive bumps.

Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.

An array substrate and manufacturing method thereof are provided. The method includes: forming a gate metal layer on a substrate, and forming a gate insulating layer on the gate metal layer; forming amorphous silicon layer, N-type amorphous silicon layer, source and drain metals on the gate insulating layer corresponding to the gate metal layer, the source and drain metals being on same layer; forming a metal layer to be a lower metal layer of photosensor on an extension of the gate insulating layer; forming light sensing layer, passivation layer and photoresist layer on source metal, drain metal and metal layer; and forming the first light sensing layer and first passivation layer on the source and drain metals to form switch element; and forming the second light sensing layer and second passivation layer on the metal layer to form the photosensor by etching with same halftone mask.

A method of manufacturing a curved-surface detector includes: slimming a sensor substrate having photoelectric devices arranged therein to a predetermined thickness; seating the sensor substrate slimmed to the predetermined thickness on a jig curved so as to have a curved-surface shape such that the sensor substrate is curved so as to have a curved-surface shape; and joining a flexible scintillator substrate configured to emit light when being struck by radiation to an upper surface of the sensor substrate such that curvature of the sensor substrate curved so as to have a curved-surface shape by the jig is maintained.

An image sensor device includes a semiconductor substrate, a radiation sensing member, a device layer and a trench isolation. The semiconductor substrate has a front side surface and a back side surface opposite to the front side surface. The radiation sensing member is disposed in a photosensitive region of the semiconductor substrate and extends from the front side surface of the semiconductor substrate. The radiation sensing member includes a semiconductor material with an optical band gap energy smaller than 1.77 eV. The device layer is over the front side surface of the semiconductor substrate and the radiation sensing member. The trench isolation is disposed in an isolation region of the semiconductor substrate and extends from the back side surface of the semiconductor substrate.

The present disclosure describes a throughput-scalable image sensing system for analyzing biological or chemical samples is provided. The system includes a plurality of image sensors configured to detect at least a portion of light emitted as a result of analyzing the biological or chemical samples. The plurality of image sensors is arranged on a plurality of wafer-level packaged semiconductor dies of a single semiconductor wafer. Each image sensor of the plurality of image sensors is disposed on a separate packaged semiconductor die of the plurality of packaged semiconductor dies. Neighboring packaged semiconductor dies are separated by a dicing street; and the plurality of packaged semiconductor dies and a plurality of dicing streets are arranged such that the plurality of packaged semiconductor dies can be diced from the single semiconductor wafer as a group.

Provided is a method of manufacturing an image sensor package, the method including preparing a device wafer including a plurality of chip portions and a scribe lane, forming a redistribution insulating film on a lower surface of the device wafer to cover a redistribution pattern and a portion of the redistribution pattern and to cover a lower surface of the device wafer, forming a redistribution pattern on a lower surface of the device wafer and a redistribution insulating film to cover a portion of the redistribution pattern and to cover a lower surface of the device wafer, placing a preliminary transparent substrate on an upper surface of the device wafer on which the preliminary dam pattern is formed, performing a laser bonding process of radiating a laser beam to the preliminary dam pattern, and performing a singulation process forming individual image sensor packages.

An image sensor device includes a semiconductor substrate, a radiation sensing member, a device layer, and a color filter layer. The semiconductor substrate has a photosensitive region and an isolation region surrounding the photosensitive region. The radiation sensing member is embedded in the photosensitive region of the semiconductor substrate. The radiation sensing member has a material different from a material of the semiconductor substrate, and an interface between the radiation sensing member and the isolation region of the semiconductor substrate includes a direct band gap material. The device layer is under the semiconductor substrate and the radiation sensing member. The color filter layer is over the radiation sensing member and the semiconductor substrate.

Implementations of a molded image sensor chip scale package may include an image sensor having a first side and a second side. A first cavity wall and a second cavity wall may be coupled to the first side of the image sensor and extend therefrom. The first cavity wall and the second cavity wall may form a cavity over the image sensor. A transparent layer may be coupled to the first cavity wall and the second cavity wall. A redistribution layer (RDL) may be coupled to the second side of the image sensor. At least one interconnect may be directly coupled to the RDL. A mold material may encapsulate a portion of the RDL, a portion of the image sensor, and a side of each cavity wall, and a portion of the transparent layer.

Described herein are photon counting devices comprising direct mode detectors with improved signal to noise ratios which are suitable for use in X-ray imaging devices, and other imaging devices.