The present disclosure relates to a stacked device, a manufacturing method, and an electronic instrument, capable of suppressing adverse effects of noise generated from one substrate, onto the other substrate. A first metal layer is formed on a bonding surface of one substrate, and a second metal layer is formed on a bonding surface of the other substrate stacked with the one substrate. Subsequently, an electromagnetic wave shield structure that interrupts an electromagnetic wave between the one substrate and the other substrate is provided by bonding the metal layer of the one substrate with the metal layer of the other substrate and by performing potential fixing. The present technology can be applied, for example, to a stacked CMOS image sensor.

Systems, devices, and methods are described for providing, among other things, an intra-oral x-ray imaging system configured to reduce patient exposure to x-rays, reduce amount of scatter, transmission, or re-radiation during imaging, or improve x-ray image quality. In an embodiment, an intra-oral x-ray imaging system includes an intra-oral x-ray sensor configured to communicate intra-oral x-ray sensor position information or intra-oral x-ray sensor orientation information to a remote x-ray source.

A contact image sensor is disclosed in the present invention. The contact image sensor includes: a substrate; an array of sensing units, formed above the substrate; a first insulation structure, formed over the sensing units and the substrate; a number of focusing units, formed above the first insulation structure, each focusing unit is aligned above a corresponding sensing unit with the first insulation structure sandwiched therebetween; a conductive metal layer, linked to a control circuit; an array of Organic Light-Emitting Diode (OLED) units, formed above the conductive metal layer and connected thereto; a transparent conductive layer, formed above the array of OLED units, and connected to the control circuit to control the statuses of the OLED units; and a transparent insulation structure, formed above the transparent conductive layer.

An image sensor including a first semiconductor region of a first conductivity type that is arranged in a substrate, a second semiconductor region of a second conductivity type that is arranged in the first semiconductor region to form a charge accumulation region. The second semiconductor region includes a plurality of portions arranged in a direction along a surface of the substrate. A potential barrier is formed between the plurality of portions. The second semiconductor region is wholly depleted by expansion of a depletion region from the first semiconductor region to the second semiconductor region. A finally-depleted portion to be finally depleted, of the second semiconductor region, is depleted by the expansion of the depletion region from a portion of the first semiconductor region, located in a lateral direction of the finally-depleted portion.

An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

In a photoelectric conversion device, groups of unit pixels are arranged in a well, where each of the unit pixels includes photoelectric conversion elements, an amplifier transistor, and transfer transistors. The photoelectric conversion device includes a line used to supply a voltage to the well, a well-contact part used to connect the well-voltage-supply line to the well, and transfer-control lines used to control the transfer transistors. The transfer-control lines are symmetrically arranged with respect to the well-voltage-supply line in respective regions of the unit-pixel groups.

Provided a semiconductor light detection element including: a semiconductor portion having a front surface including a light reception region that receives incident light and photoelectrically converting the incident light incident on the light reception region; a metal portion provided on the front surface; and a carbon nanotube film provided on the light reception region and formed by depositing a plurality of carbon nanotubes. The carbon nanotube film extends over an upper surface of the metal portion from an upper surface of the light reception region.

The present application discloses a display device. The display device comprises: a displaying component, an imaging component, and a placement region indicating component, wherein, the imaging component establishes a communication connection with the displaying component, the placement region indicating component is configured to indicate a placement region of an object to be imaged, an imaging region of the imaging component being the placement region as indicated by the placement region indicating component, the imaging component is configured to image the object to be imaged which is located within the placement region, and the displaying component is configured to display an image generated by the imaging component.

The present disclosure provides techniques for improving the rate and efficiency of charge transfer within an integrated circuit configured to receive incident photons. Some aspects of the present disclosure relate to integrated circuits that are configured to induce one or more intrinsic electric fields that increase the rate and efficiency of charge transfer within the integrated circuits. Some aspects of the present disclosure relate to integrated circuits configured to induce a charge carrier depletion in the photodetection region(s) of the integrated circuits. In some embodiments, the charge carrier depletion in the photodetection region(s) may be intrinsic, in that the depletion is induced even in the absence of external electric fields applied to the integrated circuit. Some aspects of the present disclosure relate to processes for operating and/or manufacturing integrated devices as described herein.