A trench-type MESFET includes an n-type semiconductor layer including a Ga.sub.2O.sub.3-based single crystal and including plural trenches opening on one surface, first insulators respectively buried in bottom portions of the plural trenches, gate electrodes respectively buried in the plural trenches so as to be placed on the first insulators and so that side surfaces thereof are in contact with the n-type semiconductor layer, a source electrode connected to a mesa-shaped portion between the adjacent trenches of the n-type semiconductor layer, second insulators respectively buried in the plural trenches so as to be placed on the gate electrodes to insulate the gate electrodes and the source electrode, and a drain electrode directly or indirectly connected to the n-type semiconductor layer on a side opposite to the source electrode.

A semiconductor device includes a semiconductor body having an active area with active transistor cells. Each active transistor cell includes a columnar trench having a field plate and a mesa. An edge termination region that laterally surrounds the active area includes a transition region, an outer termination region, and inactive cells arranged in the transition region and outer termination region. Each inactive cell includes a columnar termination trench having a field plate and a termination mesa including a drift region. In the transition region, the termination mesa includes a body region arranged on the drift region and in the outer termination region the drift region of the termination mesa extends to the first surface. The edge termination region further includes a continuous trench positioned in the outer termination region, that laterally surrounds the columnar termination trenches, and is filled with at least one dielectric material.

The present disclosure relates to semiconductor structures and, more particularly, to high-voltage electrostatic discharge (ESD) devices and methods of manufacture. The structure comprising a vertical silicon controlled rectifier (SCR) connecting to an anode, and comprising a buried layer of a first dopant type in electrical contact with an underlying continuous layer of a second dopant type within a substrate.

A method of manufacturing an integrated circuit device including a self-aligned air spacer including the operations of forming a dummy gate, forming a sidewall on the dummy gate, forming a dummy layer on the sidewall, constructing a gate structure within an opening defined by the sidewall, removing at least a portion of the first dummy layer to form a first recess between the sidewall layer and the dummy gate, and capping the first recess to form a first air spacer.

Structures for a photonics chip that include a fully-depleted silicon-on-insulator field-effect transistor and related methods. A first device region of a substrate includes a first device layer, a first portion of a second device layer, and a buried insulator layer separating the first device layer from the first portion of the second device layer. A second device region of the substrate includes a second portion of the second device layer. The first device layer, which has a thickness in a range of about 4 to about 20 nanometers, transitions in elevation to the second portion of the second device layer with a step height equal to a sum of the thicknesses of the first device layer and the buried insulator layer. A field-effect transistor includes a gate electrode on the top surface of the first device layer. An optical component includes the second portion of the second device layer.

An apparatus includes a first drain/source region and a second drain/source region surrounded by an isolation ring formed over a substrate, the isolation ring formed being configured to be floating, and a first diode connected between the substrate and the isolation ring, wherein the first diode is a Schottky diode.

A semiconductor device includes a gate extraction portion extracted from a gate electrode and extending from an active region to an outer peripheral region so as to be disposed above an end portion of a field insulating film. The end portion of the gate field insulating film above which the gate extraction portion is disposed is inclined in such a manner that a thickness of the field insulating film increases in a direction from the active region toward the outer peripheral region.

A semiconductor device includes a substrate, a pair of semiconductor fins, a dummy fin structure, a gate structure, a plurality of source/drain structures, a crystalline hard mask layer, and an amorphous hard mask layer. The pair of semiconductor fins extend upwardly from the substrate. The dummy fin structure extends upwardly above the substrate and is laterally between the pair of semiconductor fins. The gate structure extends across the pair of semiconductor fins and the dummy fin structure. The source/drain structures are above the pair of semiconductor fins and on either side of the gate structure. The crystalline hard mask layer extends upwardly from the dummy fin and has an U-shaped cross section. The amorphous hard mask layer is in the first hard mask layer, wherein the amorphous hard mask layer having an U-shaped cross section conformal to the U-shaped cross section of the crystalline hard mask layer.

The disclosure relates to a semiconductor storage device and a forming method thereof. The semiconductor storage device includes a substrate; a plurality of active region structures provided on the substrate; a shallow trench isolation structure provided within the substrate, the shallow trench isolation structure surround the plurality of active region structures; a plurality of conductive line structures, extending parallel to each other along a first direction, the conductive line structure include a first region and a second region, the first region being located over each of the plurality of active region structures, the second region is located over the shallow trench isolation structure; in a direction perpendicular to the substrate, the depth of the first region is greater than the depth of the second region.

A method for fabricating of semiconductor device is provided, including providing a substrate. A first trench isolation and a second trench isolation are formed in the substrate. A portion of the substrate is etched to have a height between a top and a bottom of the first and second trench isolations. A germanium (Ge) doped layer region is formed in the portion of the substrate. A fluorine (F) doped layer region is formed in the portion of the substrate, lower than and overlapping with the germanium doped layer region. An oxidation process is performed on the portion of the substrate to form a gate oxide layer between the first and second trench isolations.