Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of seeding the surface of a substrate material, forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the donor atoms contribute conduction electrons with mobility greater than 770 cm.sup.2/Vs to the diamond lattice at 100 kPa and 300K, and Wherein the n-type donor atoms are introduced to the lattice through ion tracks.

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

A plate varactor includes a dielectric substrate and a first electrode embedded in a surface of the substrate. A capacitor dielectric layer is disposed over the first electrode, and a layer of graphene is formed over the dielectric layer to contribute a quantum capacitance component to the dielectric layer. An upper electrode is formed on the layer of graphene. Other embodiments and methods for fabrication are also included.

Provided is a single crystal diamond having a lowered dislocation density. The single crystal diamond (10) is provided with single crystal diamond layers (2, 3). One single crystal diamond layer (2) is formed on a diamond substrate (1) and contains point defects. The other single crystal diamond layer (3) is grown on the single crystal diamond layer (2). The single crystal diamond layers (2, 3) have a lower dislocation density than the diamond substrate.

There is provided a novel stack that includes a single-crystal diamond substrate having a coalescence boundary, yet effectively uses the coalescence boundary. A stack comprising at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cm.sup.1 due to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 m or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.

One device disclosed herein includes, among other things, first and second conductive features embedded in a first dielectric layer, a cap layer positioned above the first dielectric layer, a ballistic transport material contacting the first conductive member and positioned above a portion of the first dielectric layer, and first and second contacts contacting the first and second conductive features.

Electronic devices and more particularly diamond-based electronic devices and corresponding contact structures are disclosed. Electrical contact structures to diamond layers, including n-type, phosphorus doped single-crystal diamond are disclosed. In particular, electrical contact structures are formed through an arrangement of one or more nanostructured carbon layers with high nitrogen incorporation that are provided between metal contacts and n-type diamond layers in diamond-based electronic devices. Nanostructured carbon layers may be configured to mitigate reduced phosphorus incorporation in n-type diamond layers, thereby providing low specific contact resistances for corresponding devices. Diamond p-i-n diodes for direct electron emission applications are also disclosed that include electrical contact structures with nanostructured carbon layers.

Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of seeding the surface of a substrate material, forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the donor atoms contribute conduction electrons with mobility greater than 770 cm.sup.2/Vs to the diamond lattice at 100 kPa and 300K, and Wherein the n-type donor atoms are introduced to the lattice through ion tracks.

One device disclosed herein includes, among other things, first and second conductive features embedded in a first dielectric layer, a cap layer positioned above the first dielectric layer, a ballistic transport material contacting the first conductive member and positioned above a portion of the first dielectric layer, and first and second contacts contacting the first and second conductive features.

An elevator system (2) comprises an elevator car (10) configured for traveling within a hoistway (4) between a plurality of landings (8); and at least one energy harvesting device (20) attached to the elevator car (10). The at least one energy harvesting device (20) is configured for converting mechanical energy, in particular kinetic energy, into electric energy.