Thyristor semiconductor device comprising an anode region, a first base region and a second base region having opposite types of conductivity, and a cathode region, all superimposed along a vertical axis.

In a light emitting element array in which a plurality of components having multiple light emitting thyristors connected to a single shift thyristor are arranged in a plurality of lines, the density of the light emitting thyristor is increased without reduction in the amount of light emission of each of the light emitting thyristors. In the light emitting element array in which multiple light emitting thyristors are formed on a single island structure and the multiple light emitting thyristors are connected to a single shift thyristor, a first element-isolating groove that element-isolates the multiple light emitting thyristors from each other inside the single island structure is formed shallower than a second element-isolating groove that element-isolates the island structure.

A power switching device may include a semiconductor substrate and a body region comprising an n-type dopant, the body region disposed in an inner portion of the semiconductor substrate; a first base layer disposed adjacent a first surface of the semiconductor substrate, the first p-base layer comprising a p-type dopant; a second base layer disposed adjacent a second surface of the semiconductor substrate, the second base layer comprising a p-type dopant; a first emitter region, disposed adjacent the first surface of the semiconductor substrate, the first emitter region comprising a n-type dopant; a second emitter-region, disposed adjacent the second surface of the semiconductor substrate, the second emitter-region comprising a n-type dopant; a first field stop layer arranged between the first base layer and the body region, the first field stop layer comprising a n-type dopant; and a second field stop layer arranged between the second base layer and the body region, the second field stop layer comprising a n-type dopant.

Device structures including a silicon-controlled rectifier and methods of forming a device structure including a silicon-controlled rectifier. The device structure comprises a first well and a second well in a semiconductor substrate, a first terminal including a first doped region in the first well, and a second terminal including a second doped region in the second well. The first well and the second doped region have a first conductivity type, and the second well and the first doped region have a second conductivity type opposite from the first conductivity type. The second well adjoins the first well along an interface. A third doped region includes a first portion in the first well and a second portion in the second well, and a gate structure that overlaps with a portion of the second well.

A power semiconductor device (1) comprises a gate-commutated thyristor cell (20) including a cathode electrode (2), a cathode region (9) of a first conductivity type, a base layer (8) of a second conductivity type, a drift layer (7) of the first conductivity type, an anode layer (5) of the second conductivity type, an anode electrode (3) and a gate electrode (4). The base layer (8) comprises a cathode base region (81) located between the cathode region (9) and the drift layer (7) and having a first depth (D1), a gate base region (82) located between the gate electrode (4) and the drift layer (7) and having a second depth (D2), and an intermediate base region (83) located between the cathode base region (81) and the gate base region (82) and having two different values of a third depth (D3) being between the first depth (D1) and the second depth (D2).

In a light emitting element array in which a plurality of components having multiple light emitting thyristors connected to a single shift thyristor are arranged in a plurality of lines, the density of the light emitting thyristor is increased without reduction in the amount of light emission of each of the light emitting thyristors. In the light emitting element array in which multiple light emitting thyristors are formed on a single island structure and the multiple light emitting thyristors are connected to a single shift thyristor, a first element-isolating groove that element-isolates the multiple light emitting thyristors from each other inside the single island structure is formed shallower than a second element-isolating groove that element-isolates the island structure.

Thyristor semiconductor device comprising an anode region, a first base region and a second base region having opposite types of conductivity, and a cathode region, all superimposed along a vertical axis.

There is provided a thyristor having emitter shorts, wherein in an orthogonal projection onto a plane parallel to a first main side, a contact area covered by an electrical contact of a first electrode layer with a first emitter layer and the emitter shorts includes areas in the shape of lanes, in which an area coverage of the emitter shorts is less than the area coverage of emitter shorts in the remaining area of the contact area, wherein the area coverage of the emitter shorts in a specific area is the area covered by the emitter shorts in that specific area relative to the specific area. The thyristor of the invention exhibits a fast turn-on process even without complicated amplifying gate structure.

A semiconductor device is provide that includes: a semiconductor body having a first surface, an inner region, and an edge region; a pn junction between a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the pn-junction extending in a lateral direction of the semiconductor body in the inner region; a recess extending from the first surface in the edge region into the semiconductor body, the recess comprising at least one sidewall; a dielectric filling the recess. In the dielectric, a dielectric number, in the lateral direction, decreases as a distance from the first sidewall increases.

There is provided a thyristor having emitter shorts, wherein in an orthogonal projection onto a plane parallel to a first main side, a contact area covered by an electrical contact of a first electrode layer with a first emitter layer and the emitter shorts includes areas in the shape of lanes, in which an area coverage of the emitter shorts is less than the area coverage of emitter shorts in the remaining area of the contact area, wherein the area coverage of the emitter shorts in a specific area is the area covered by the emitter shorts in that specific area relative to the specific area. The thyristor of the invention exhibits a fast turn-on process even without complicated amplifying gale structure.