A solid-state imaging device includes a substrate and a photoelectric conversion region. The substrate has a charge accumulation region. The photoelectric conversion region is provided on the substrate. The photoelectric conversion region is configured to generate signal charges to be accumulated in the charge accumulation region. The photoelectric conversion region comprises a material that is not transparent.

The invention relates to a luminescent solar concentrator comprising a glass or plastic matrix containing colloidal nanocrystals of at least ternary semiconductors based on metals of groups IB and IIIA (groups 11 and 16 respectively in the UIPAC nomenclature) and at least one chalcogen (group VIA, or 16 in the IUPAC nomenclature).

In various embodiments, evaporation sources for deposition systems are heated and/or cooled via a fluid-based thermal management system.

A system for CIGS thin film pretreatment includes a RF power supply system, an inductance coil, a process chamber and a cathode plate. The inductance coil is disposed on the top of the process chamber. The cathode plate is disposed at a bottom of the process chamber. The RF power supply system is configured to power the inductance coil and the cathode plate at different power to form a RF voltage, and make the inductance coil generate rays with a specified frequency. The process chamber is configured to contain a CIGS thin film to be treated, contain a process gas, and allow the rays to enter. The process gas is capable of forming plasma under the ionization of the rays. The plasma is capable of moving toward the cathode plate and bombarding a surface of the CIGS thin film under the driving of the RF voltage.

A layer structure for a thin-film solar cell and production method are provided. The layer structure for the thin-film solar cell includes a photovoltaic absorber layer doped, at least in a region which borders a surface of the photovoltaic absorber layer, with at least one alkali metal. The layer structure has an oxidic passivating layer on the surface of the photovoltaic absorber layer, which is designed to protect the photovoltaic absorber layer from corrosion.

The application discloses a solar cell component including at least two chip sets connected in series, wherein each chip set includes a plurality of chip units connected in parallel and a bypass diode connected in parallel with the chip units, each chip unit includes one or more photovoltaic chips connected in series, positive poles of the bypass diodes are connected with negative poles of the chip units, and negative poles of the bypass diodes are connected with positive poles of the chip units. The application further provides a solar panel with the solar cell component. The application not only can reduce the number of the bypass diodes, but also can improve economy of the product.

A solar cell of an embodiment includes: a substrate having a light transmitting property; a first electrode including a plurality of metal portions and having a light transmitting property; a light absorbing layer disposed on the first electrode and absorbing light; and a second electrode disposed on the light absorbing layer and having a light transmitting property.

According to an aspect of the present invention, there is provided a method of manufacturing a compound thin film, which includes configuring an electrodeposition circuit by connecting an electrolytic solution, which is manufactured by mixing a predetermined precursor with a solvent, and an electrochemical cell, which includes a working electrode in a form of an electrode at which a specific pattern is patterned on a predetermined substrate, to a voltage application device or a current application device, and applying a reduction voltage or current to the working electrode using the voltage application device or the current application device, and selectively electrodepositing a thin film in some region of the electrode along a shape of the electrode at which the specific pattern is patterned.

The embodiment of the application discloses a photoelectric sensor and a manufacturing method thereof, wherein the photoelectric sensor comprises: a light absorbing layer for absorbing incident light to generate a photocurrent, the light absorption layer comprises a first absorption layer and a second absorption layer stacked in the direction of incident light, the first absorption layer being an intrinsic semiconductor layer of the photoelectric sensor, the second absorption layer being made of a material having a higher photoelectric conversion efficiency than the first absorption layer, and the second absorption layer has a stripe structure arranged at intervals.

Embodiments disclosed herein include photodiodes and methods of forming such photodiodes. In an embodiment, a method of creating a photodiode, comprises disposing an absorber layer over a first contact, wherein the absorber layer comprises a first conductivity type, and disposing a semiconductor layer over the absorber, wherein the semiconductor layer has a second conductivity type that is opposite from the first conductivity type. In an embodiment, the method further comprises disposing a hole blocking layer over the semiconductor layer, wherein the hole blocking layer is formed with a reactive sputtering process with a processing gas that comprises oxygen, and disposing a second contact over the hole blocking layer.