A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

A solid-state imaging device includes a substrate and a photoelectric conversion region. The substrate has a charge accumulation region. The photoelectric conversion region is provided on the substrate. The photoelectric conversion region is configured to generate signal charges to be accumulated in the charge accumulation region. The photoelectric conversion region comprises a material that is not transparent.

The embodiments of the present disclosure provide a tarpaulin solar energy generation system and a solar tent. In the tarpaulin solar energy generation system, one or more solar components are fixed on the tarpaulin and adapted to receive light energy, and a controller is connected to each of the solar components and an energy storage battery and adapted to convert electrical energy generated by the solar components and to store the converted electrical energy in the energy storage battery.

A process for manufacturing colloidal nanosheet, by lateral growth, on an initial colloidal nanocrystal, of a crystalline semiconductor material represented by the formula M.sub.nX.sub.y, where M is a transition metal and X a chalcogen. The process includes the following steps: The preparation of a first organic solution, non or barely coordinating used as a synthesis solvent and including at least one initial colloidal nanocrystal; The preparation of a second organic solution including precursors of M and X, and including an acetate salt. And the slow introduction over a predetermined time scale of a predetermined amount of the second solution in a predetermined amount of the first solution, at a predetermined temperature for the growth of nanosheets. The use of the obtained material is also presented.

Provided is a method of fabricating a CIGS absorption layer which, may have improved material utilization and productivity and have excellent thin film uniformity even in a large area by depositing and heat treating a precursor having a multilayer structure by a sputtering method using a compound, target of In.sub.xGa.sub.ySez(IGS) and Cu.sub.xSe.sub.y (CS).

A photovoltaic system including a solar cell having a hysteretic behavior; and a power device configured to extract a maximum power from the solar cell by forcing power oscillations of the power output by the solar cell.

A coated plate is provided. The coated plate includes a light-transmitting substrate and a film layer arranged on one side of the light-transmitting substrate. The film layer is a full dielectric film, and the film layer includes a high refractive index material film. The refractive index of the high refractive index material film is higher than that of the light-transmitting substrate. A preparation method of the coated plate and a solar module are also provided.

A microstructured ZnO coating that improves the performance of Cu(In,Ga)Se.sub.2 (CIGS) photovoltaic (PV) devices via two mechanisms; it acts an antireflective layer with superior non-normal performance to thin film anti-reflective (AR) coatings, and it scatters a large fraction of incoming light at a large angle, resulting in absorption that is on average closer to the p-n junction.

A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than 110.sup.19/cm.sup.3, depositing a transparent conductive oxide layer over the semiconductor material stack, such that sodium atoms diffuse from the semiconductor material stack into the transparent conductive oxide layer, and contacting a physically exposed surface of the transparent conductive oxide layer with a fluid to remove sodium from the transparent conductive oxide layer.

Provided is a chalcogenide thin film solar cell having a transparent back electrode, including a transparent substrate, a photoactive layer including an S, Se-based chalcogenide material, and a back electrode disposed between the transparent substrate and the photoactive layer and including a transparent conductive oxide containing titanium (Ti).