Optoelectronic devices having an improved architecture are disclosed, such as p-i-n hybrid solar cells. These solar cells are characterized by including an insulating mesoporous scaffold in between the hole transportation layer and the photoactive layer, in such a way that the photoactive layer infiltrates the insulating mesoporous scaffold and contacts the hole transportation layer. The infiltration of the photoactive layer in the mesoporous scaffold improves the performance of the hole transportation layer and increases the photovoltaic performance of the solar cell. Solar cells, according to the present invention are manufactured in their entirety below 150° C. and present advantages in terms of cost and ease of manufacture, performance, and energy efficiency, stability over time and reproducibility.

Optoelectronic devices having an improved architecture are disclosed, such as p-i-n hybrid solar cells. These solar cells are characterized by including an insulating mesoporous scaffold in between the hole transportation layer and the photoactive layer, in such a way that the photoactive layer infiltrates the insulating mesoporous scaffold and contacts the hole transportation layer. The infiltration of the photoactive layer in the mesoporous scaffold improves the performance of the hole transportation layer and increases the photovoltaic performance of the solar cell. Solar cells, according to the present invention are manufactured in their entirety below 150° C. and present advantages in terms of cost and ease of manufacture, performance, and energy efficiency, stability over time and reproducibility.

A positive-intrinsic-negative (PIN) photosensitive device is provided. A p-type semiconductor layer composed of molybdenum oxide and having valence band energy between valence band energy of an intrinsic semiconductor layer and an upper electrode is used to replace a p-type semiconductor layer used in a conventional PIN photodiode, so that the PIN photodiode may be prepared without using borane gas. More, a difference between valence band energy of the p-type semiconductor layer and the intrinsic semiconductor layer is used to transport holes located in a valence band, so that it is unnecessary to use an active layer of a thin film transistor, so that the PIN photosensitive device may be stacked on the thin film transistor to reduce aperture ratio loss of a display panel.

A positive-intrinsic-negative (PIN) photosensitive device is provided. A p-type semiconductor layer composed of molybdenum oxide and having valence band energy between valence band energy of an intrinsic semiconductor layer and an upper electrode is used to replace a p-type semiconductor layer used in a conventional PIN photodiode, so that the PIN photodiode may be prepared without using borane gas. More, a difference between valence band energy of the p-type semiconductor layer and the intrinsic semiconductor layer is used to transport holes located in a valence band, so that it is unnecessary to use an active layer of a thin film transistor, so that the PIN photosensitive device may be stacked on the thin film transistor to reduce aperture ratio loss of a display panel.

According to one embodiment, a solar cell includes a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode. When a transmittance of the solar cell is measured in a wavelength range of 700 to 1000 nm, an average of the transmittance of the solar cell is 60% or more.

Photodetectors comprising a P type Ge region having a first region thickness and a first doping concentration and a N type GaAs region having a second region thickness and a second doping concentration smaller than the first doping concentration by at least one order of magnitude.

Photodetectors comprising a P type Ge region having a first region thickness and a first doping concentration and a N type GaAs region having a second region thickness and a second doping concentration smaller than the first doping concentration by at least one order of magnitude.

A stacked multi-junction solar cell with a metallization comprising a multilayer system, wherein the multi-junction solar cell has a germanium substrate forming a bottom side of the multi-junction solar cell, a germanium subcell, and at least two III-V subcells, the multilayer system of the metallization has a first layer, comprising gold and germanium, a second layer comprising titanium, a third layer, comprising palladium or nickel or platinum, with a layer thickness, and at least one metallic fourth layer, and the multilayer system of the metallization covers at least one first and second surface section and is integrally connected to the first and second surface section, wherein the first surface section is formed by the dielectric insulation layer and the second surface section is formed by the germanium substrate or by a III-V layer.

A marking method for applying a unique identification to each individual solar cell stack of a semiconductor wafer, at least comprising the steps: Providing a semiconductor wafer having an upper side and an underside, which comprises a Ge substrate forming the underside; and generating an identification with a unique topography by means of laser ablation, using a first laser, on a surface area of the underside of each solar cell stack of the semiconductor wafer, the surface area being formed in each case by the Ge substrate or by an insulating layer covering the Ge substrate.

In the field of photoelectric devices, a visible light detector is provided with high-photoresponse based on a TiO.sub.2/MoS.sub.2 heterojunction and a preparation method thereof. The detector, based on a back-gated field-effect transistor based on MoS.sub.2, includes a MoS.sub.2 channel, a TiO.sub.2 modification layer, a SiO.sub.2 dielectric layer, Au source/drain electrodes and a Si gate electrode, The TiO.sub.2 modification layer is modified on the surface of the MoS.sub.2 channel. By employing micromechanical exfoliation and site-specific transfer of electrodes, the method is intended to prepare a detector by constructing a back-gated few-layer field-effect transistor based on MoS.sub.2, depositing Ti on the channel surface, and natural oxidation.